Anisotropic thermoelectric effect and field-effect devices in epitaxial bismuthene on Si (111).

This experimental study reveals intriguing thermoelectric effects and devices in epitaxial bismuthene, two-dimensional (2D) bismuth with thickness ⩽30 nm, on Si (111). Bismuthene exhibits interesting anisotropic Seebeck coefficients varying 2-5 times along different crystal orientations, implying the existence of a puckered atomic structure like black phosphorus. An absolute value of Seebeck coefficient up to 237 µV K-1 sets a record for elemental Bi ever measured to the best of our knowledge. Electrical conductivity of bismuthene can reach up to 4.6 × 104 S m-1, which is sensitive to thickness and magnetic field. Along with a desired low thermal conductivity ∼1.97 W m-1 K that is 20% of its bulk form, the first experimental zT value at room temperature for bismuthene was measured ∼10-2, which is much higher than many other VA Xenes and comparable to its bulk compounds. Above results suggest a mixed buckled and puckered Bi atomic structure for epitaxial 2D bismuth on Si (111). Our work paves the way to explore potential applications, such as heat flux sensor, energy converting devices and so on for bismuthene.

Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators.

As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compounds remains a challenge. To this end, a versatile van der Waals epitaxy (vdWE) process for custom-feature bismuth telluro-sulfide TI growth and fabrication is presented, achieved through selective-area fluorination and modification of surface free-energy on mica. The TI features grow epitaxially in large single-crystal trigonal domains, exhibiting armchair or zigzag crystalline edges highly oriented with the underlying mica lattice and only two preferred domain orientations mirrored at 180°. As-grown feature thickness dependence on lateral dimensions and denuded zones at boundaries are observed, as explained by a semiempirical two-species surface migration model with robust estimates of growth parameters and elucidating the role of selective-area surface modification. Topological surface states contribute up to 60% of device conductance at room temperature, indicating excellent electronic quality. High-yield microfabrication and the adaptable vdWE growth mechanism with readily alterable precursor and substrate combinations lend the process versatility to realize crystalline TI synthesis in arbitrary shapes and arrays suitable for facile integration with processes ranging from rapid prototyping to scalable manufacturing.

Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films.

We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth thin films grown on silicon (111) to silicon strips coated with epoxy. The transferred bismuth films retained electrical, optical, and structural properties comparable to the as-grown epitaxial films. Additionally, we isolated the bismuth thin films on freestanding flexible cured-epoxy post-transfer. The adhesion energy at the bismuth/silicon interface was measured to be ∼1 J/m2, comparable to that of exfoliated and wet transferred graphene. This low adhesion energy and ease of transfer is unexpected for an epitaxially grown film and may enable the study of bismuth's unique electronic and spintronic properties on arbitrary substrates. Moreover, this method suggests a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic thin-film limit of bismuth.

Conserved residues in juxtamembrane region of the extracellular domain of nicastrin are essential for gamma-secretase complex formation.

The Alzheimer's disease-linked protein, presenilin, forms the active site of the gamma-secretase enzyme complex. However, three other proteins, nicastrin (NCT), PEN-2 and APH-1, are required for enzyme activity. This complex is responsible for cleaving the beta-amyloid precursor protein to produce amyloid beta and the intracellular domain (AICD). Although much research has focused on the regions of presenilin that are important for gamma-secretase function, less is known about NCT. To further our understanding of the role of NCT in gamma-secretase activity and complex formation, we have undertaken a systematic evaluation of conserved residues in the juxtamembrane region of the extracellular domain of NCT. Two mutants, S632A and W648A, greatly reduce gamma-secretase activity, as seen by a reduction in amyloid beta and AICD levels. Several lines of evidence suggest that these mutations result in reduced gamma-secretase activity because they affect the ability of NCT to stably associate with the other gamma-secretase components. Since NCT and APH-1 must first bind in order for presenilin and PEN-2 to stably join the complex, we propose that S632 and W648 are essential for a stable interaction with APH-1.

Presenilin endoproteolysis is an intramolecular cleavage.

Mutations in the presenilin genes (PS) account for most cases of familial Alzheimer's disease. PS contain the active site of the gamma-secretase complex that cleaves within the transmembrane domain of beta-amyloid precursor protein (APP). Full-length PS undergoes regulated endoproteolysis to produce fragments that comprise the active form of PS. The "presenilinase" responsible for endoproteolysis is unknown but may be the same presenilin-dependent gamma-secretase activity that cleaves APP. To investigate the mechanism of endoproteolysis, we examined sequence specificity at the cleavage site and tested whether PS dimers are important for endoproteolysis as well as gamma-secretase activity. No single point mutation, or a double mutation M292D/V293K, was able to completely abolish endoproteolysis and all mutants supported gamma-secretase activity. When wtPS1 was co-expressed with either M292D/V293K or D257A, it was unable to restore normal endoproteolysis to either mutant. Lack of transcleavage by wtPS1 suggests that PS1 endoproteolysis occurs via intramolecular cleavage and does not require dimerization.

Presenilin 2 familial Alzheimer's disease mutations result in partial loss of function and dramatic changes in Abeta 42/40 ratios.

Gene knockout studies in mice suggest that presenilin 1 (PS1) is the major gamma-secretase and that it contributes disproportionately to amyloid beta (Abeta) peptide generation from beta-amyloid precursor protein (APP), whereas PS2 plays a more minor role. Based on this and other observations we hypothesized that familial Alzheimer's disease (FAD) mutations in PS2 would have a dramatic effect on function in order to have an observable effect on Abeta levels in the presence of normal PS1 alleles. Only four of the eight reported FAD mutations in PS2 have altered function in vitro suggesting that the other variants represent rare polymorphisms rather than disease-causing mutations. In support of our hypothesis, the four verified PS2 FAD mutations cause substantial changes in the Abeta 42/40 ratio, comparable with PS1 mutations that cause very-early-onset FAD. Most of the PS2 mutations also cause a significant decrease in Abeta 40, APP C-terminal fragment (CTF)gamma and Notch intracellular domain (NICD) production suggesting that they are partial loss of function mutations. PS2 M239V, its PS1 homolog M233V, and other FAD mutations within transmembrane (TM) 5 of PS1 differentially affect CTFgamma and NICD production suggesting that TM5 of PS are important for gamma-secretase cleavage of APP but not Notch.