RESUMO
We explain the appearance of magic angles and fractional Chern insulators in twisted K-valley homobilayer transition metal dichalcogenides by mapping their continuum model to a Landau level problem. Our approach relies on an adiabatic approximation for the quantum mechanics of valence band holes in a layer-pseudospin field that is valid for sufficiently small twist angles and on a lowest Landau level approximation that is valid for sufficiently large twist angles. It provides a simple qualitative explanation for the nearly ideal quantum geometry of the lowest moiré miniband at particular twist angles, predicts that topological flat bands occur only when the valley-dependent moiré potential is sufficiently strong compared to the interlayer tunneling amplitude, and provides a convenient starting point for the study of interactions.
RESUMO
We employ a functional renormalization group approach to ascertain the pairing mechanism and symmetry of the superconducting phase observed in rhombohedral trilayer graphene. Superconductivity in this system occurs in a regime of carrier density and displacement field with a weakly distorted annular Fermi sea. We find that repulsive Coulomb interactions can induce electron pairing on the Fermi surface by taking advantage of momentum-space structure associated with the finite width of the Fermi sea annulus. The degeneracy between spin-singlet and spin-triplet pairing is lifted by valley-exchange interactions that strengthen under the RG flow and develop nontrivial momentum-space structure. We find that the leading pairing instability is d-wave-like and spin singlet, and that the theoretical phase diagram versus carrier density and displacement field agrees qualitatively with experiment.
RESUMO
We present a theory of superconductivity in twisted bilayer graphene in which attraction is generated between electrons on the same honeycomb sublattice when the system is close to a sublattice polarization instability. The resulting Cooper pairs are spin-polarized valley singlets. Because the sublattice polarizability is mainly contributed by interband fluctuations, superconductivity occurs over a wide range of filling fraction. It is suppressed by (i) applying a sublattice polarizing field (generated by an aligned BN substrate) or (ii) changing moiré band filling to favor valley polarization. The enhanced intrasublattice attraction close to sublattice polarization instability is analogous to enhanced like-spin attraction in liquid ^{3}He near the melting curve and the enhanced valley-singlet repulsion close to valley-polarization instabilities is analogous to enhanced spin-singlet repulsion in metals that are close to a ferromagnetic instability. We comment on the relationship between our pseudospin paramagnon model and the rich phenomenology of superconductivity in twisted bilayer and multilayer graphene.
RESUMO
Motivated by recent nonlocal transport studies of quantum-Hall-magnet (QHM) states formed in monolayer graphene's N=0 Landau level, we study the scattering of QHM magnons by gate-controlled junctions between states with different integer filling factors ν. For the ν=1|-1|1 geometry we find that magnons are weakly scattered by electric potential variation in the junction region, and that the scattering is chiral when the junction lacks a mirror symmetry. For the ν=1|0|1 geometry, we find that kinematic constraints completely block magnon transmission if the incident angle exceeds a critical value. Our results explain the suppressed nonlocal-voltage signals observed in the ν=1|0|1 case. We use our theory to propose that valley waves generated at ν=-1|1 junctions and magnons can be used in combination to probe the spin or valley flavor structure of QHM states at integer and fractional filling factors.
RESUMO
Graphene multilayers with flat moiré minibands can exhibit the quantized anomalous Hall effect due to the combined influence of spontaneous valley polarization and topologically nontrivial valley-projected bands. The sign of the Hall effect in these Chern insulators can be reversed either by applying an external magnetic field, or by driving a transport current through the system. We propose a current-driven mechanism whereby reversal occurs along lines in the (current I, magnetic-field B) control parameter space with slope dI/dB=(e/h)MA_{M}(1-γ^{2})/γ, where M is the magnetization, A_{M} is the moiré unit cell area, and γ<1 is the ratio of the chemical potential difference between valleys along a domain wall to the electrical bias eV.