Residual resistivity as an independent indicator of resonant levels in semiconductors.

Distortion of the density of states induced by specific impurities, a mechanism known as resonant level (RL), is an efficient strategy to enhance the thermoelectric performances of metals and semiconductors. So far, experimental signatures identifying the resonant nature of an impurity have relied on the so-called Ioffe-Pisarenko plot that enables visualizing the induced thermopower enhancement at specific carrier concentrations. However, this method cannot solely discern RL from other possible band-structure-related sources of thermopower enhancement such as band-shape modifications or band convergence. An independent method of resolving this problem is proposed here. A detailed theoretical and experimental analysis of the low-temperature electrical resistivity ρ0 and carrier mobility µ0 of the resonant-level system SnTe doped with In is presented as a function of the impurity concentration x. By comparing to non-resonant cases of SnTe doped with I, Mn, and Ga, we demonstrate that the construction of residual resistivity ρ0(x) and residual mobility µ0(x) plots allows to distinguish between resonant and non-resonant impurities, even when some of them induce similar thermopower enhancements. This methodology is further confirmed by analyses performed for Na- and Tl-doped PbTe, illustrating how the combination of transport measurements at low temperatures can be used to determine the resonant nature of an impurity.

High Thermoelectric Performance of p-Type PbTe Enabled by the Synergy of Resonance Scattering and Lattice Softening.

In this work, we show the simultaneous enhancement of electrical transport and reduction of phonon propagation in p-type PbTe codoped with Tl and Na. The effective use of advanced electronic structure engineering improves the thermoelectric power factor S2σ over the temperature range from 300 to 825 K. A rise in the Seebeck coefficient S was obtained due to the enhanced effective mass m*, coming from the Tl resonance state in PbTe. Due to the presence of additional carriers brought by Na codoping, electrical conductivity became significantly improved. Furthermore, Tl and Na impurities induced crystal lattice softening, remarkably reducing lattice thermal conductivity, which was confirmed by a measured low speed of sound vm and high internal strain CεXRD. Eventually, the combination of both the attuned electronic structure and the lattice softening effects led to a very high ZT value of up to ∼2.1 for the Pb1-x-yTlxNayTe samples. The estimated energy conversion efficiency shows the extraordinary value of 15.4% (Tc = 300 K, Th = 825 K), due to the significantly improved average thermoelectric figure of merit ZTave = 1.05. This work demonstrates that the combination of impurity resonance scattering and crystal lattice softening can be a breakthrough concept for advancing thermoelectrics.

Superconductivity in LiGa2Ir Heusler type compound with VEC = 16.

Polycrystalline LiGa2Ir has been prepared by a solid state reaction method. A Rietveld refinement of powder x-ray diffraction data confirms a previously reported Heusler-type crystal structure (space group Fm-3m, No. 225) with lattice parameter a = 6.0322(1) Å. The normal and superconducting state properties were studied by magnetic susceptibility, heat capacity, and electrical resistivity techniques. A bulk superconductivity with Tc = 2.94 K was confirmed by detailed heat capacity studies. The measurements indicate that LiGa2Ir is a weak-coupling type-II superconductor ([Formula: see text]e-p = 0.57, [Formula: see text]C/[Formula: see text]Tc = 1.4). Electronic structure, lattice dynamics, and the electron-phonon interaction are studied from first principles calculations. Ir and two Ga atoms equally contribute to the Fermi surface with a minor contribution from Li. The phonon spectrum contains separated high frequency Li modes, which are seen clearly as an Einstein-like contribution in the specific heat. The calculated electron-phonon coupling constant [Formula: see text]e-p = 0.68 confirms the electron-phonon mechanism for the superconductivity. LiGa2Ir and recently reported isoelectronic LiGa2Rh are the only two known representatives of the Heusler superconductors with the valence electron count VEC = 16.

Superconductivity on a Bi Square Net in LiBi.

We present the crystallographic analysis, superconducting characterization and theoretical modeling of LiBi, that contains the lightest and the heaviest nonradioactive metal. The compound crystallizes in a tetragonal (CuAu-type) crystal structure with Bi square nets separated by Li planes (parameters a = 3.3636(1) Å and c = 4.2459(2) Å, c/a = 1.26). Superconducting state was studied in detail by magnetic susceptibility and heat capacity measurements. The results reveal that LiBi is a moderately coupled type-I superconductor (λe-p = 0.66) with T c = 2.48 K and a thermodynamic critical field Hc(0) = 157 Oe. Theoretical studies show that bismuth square net is responsible for superconductivity in this compound, but the coupling between the Li planes and Bi planes makes a significant contribution to the superconductivity.

An Sn-induced resonant level in ß-As2Te3.

Distortion of the density of states by an impurity-induced resonant level has been shown to provide an effective strategy to improve the thermoelectric performance of semiconductors such as Bi2Te3, PbTe or SnTe. Here, combining first-principles calculations and transport property measurements, we demonstrate that Sn is a resonant impurity that distorts the valence band edge in p-type ß-As2Te3. This remarkable effect is characterized as a prominent, sharp peak in the electronic density of states near the Fermi level. To illustrate the particular influence of Sn on the thermopower of ß-As2Te3, the theoretical Ioffe-Pisarenko curve, computed within the Boltzmann transport theory, is compared with the experimental results obtained on three series of polycrystalline samples with substitution of Ga and Bi for As and I for Te. While Ga and I behave as conventional, rigid-band-like dopants and follow theoretical predictions, Sn results in significant deviations from the theoretical curve with a clear enhancement of the thermopower. Both electronic band structure calculations and transport property measurements provide conclusive evidence that this enhancement and hence, the good thermoelectric performances achieved at mid temperatures in ß-As2-xSnxTe3 can be attributed to a resonant level induced by Sn atoms. The possibility to induce resonant states in the electronic band structure of ß-As2Te3 opens new avenues to further optimize its thermoelectric performance.

Correction: Eu2+-Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies.

Correction for 'Eu2+-Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies' by Bartlomiej Wiendlocha et al., Phys. Chem. Chem. Phys., 2017, 19, 9606-9616.

Eu2+-Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies.

The Eu atoms in Pb1-xEuxSe have long been assumed to be divalent. We show that p-type doping of this magnetic semiconductor alloy with Na can modify the effective Eu valence: a mixed, Eu2+-Eu3+ state appears in Pb1-x-yEuxNaySe at particular values of y. Magnetization, carrier concentration, resistivity, and thermopower of Pb1-x-yEuxNaySe are reported for a number of samples with different x and y. A pronounced increase in thermopower at a given carrier concentration was identified and attributed to the presence of enhanced ionized impurity scattering. A strong decrease in the hole concentration is observed in Pb1-yNaySe when Eu is added to the system, which we attribute to a Eu2+-Eu3+ self-ionization process. This is evidenced by magnetization measurements, which reveal a significant reduction of the magnetic moment of Pb1-xEuxSe upon alloying with Na. Further, a deviation of magnetization from a purely paramagnetic state, described by a Brillouin function, identifies antiferromagnetic interactions between the nearest-neighbor Eu atoms: a value of Jex/kB = -0.35 K was found for the exchange coupling parameter. The conclusion of a Eu2+-Eu3+ self-ionization process being in effect is supported further by the electronic structure calculations, which show that an instability of the 4f7 configuration of the Eu2+ ion appears with Na doping. Schematically, it was found that the Eu 4f levels form states near enough to the Fermi energy that hole doping can lower the Fermi energy and trigger a reconfiguration of a 4f electronic shell.

Effect of Isovalent Substitution on the Electronic Structure and Thermoelectric Properties of the Solid Solution α-As2Te3-xSex (0 ≤ x ≤ 1.5).

We report on the influence of Se substitution on the electronic band structure and thermoelectric properties (5-523 K) of the solid solution α-As2Te3-xSex (0 ≤ x ≤ 1.5). All of the polycrystalline compounds α-As2Te3-xSex crystallize isostructurally in the monoclinic space group C2/m (No. 12, Z = 4). Regardless of the Se content, chemical analyses performed by scanning electron microscopy and electron probe microanalysis indicate a good chemical homogeneity, with only minute amounts of secondary phases for some compositions. In agreement with electronic band structure calculations, neutron powder diffraction suggests that Se does not randomly substitute for Te but exhibits a site preference. These theoretical calculations further predict a monotonic increase in the band gap energy with the Se content, which is confirmed experimentally by absorption spectroscopy measurements. Increasing x up to x = 1.5 leaves unchanged both the p-type character and semiconducting nature of α-As2Te3. The electrical resistivity and thermopower gradually increase with x as a result of the progressive increase in the band gap energy. Despite the fact that α-As2Te3 exhibits very low lattice thermal conductivity κL, the substitution of Se for Te further lowers κL to 0.35 W m-1 K-1 at 300 K. The compositional dependence of the lattice thermal conductivity closely follows classical models of phonon alloy scattering, indicating that this decrease is due to enhanced point-defect scattering.