High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors byin situH2plasma and neutral oxygen beam irradiation treatment.

In this work, staggered bottom-gate structure amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with high-k ZrO2gate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) within situhydrogenation to modulate the carrier concentration and improve interface quality. Subsequently, a neutral oxygen beam irradiation (NOBI) technique is applied, demonstrating that a suitable NOBI treatment could successfully enhance electrical characteristics by reducing native defect states and minimize the trap density in the back channel. A reverse retrograde channel (RRGC) with ultra-high/low carrier concentration is also formed to prevent undesired off-state leakage current and achieve a very low subthreshold swing. The resulting a-IGZO TFTs exhibit excellent electrical characteristics, including a low subthreshold swing of 72 mV dec-1and high field-effect mobility of 35 cm2V-1s-1, due to conduction path passivation and stronger carrier confinement in the RRGC. The UV-vis spectroscopy shows optical transmittance above 90% in the visible range of the electromagnetic spectrum. The study confirms the H2plasma with NOBI-treated a-IGZO/ZrO2TFT is a promising candidate for transparent electronic device applications.

Impact of Pelvic Fracture on Patients with Blunt Bowel Mesenteric Injury: Is Immediate Laparotomy Warranted?

The management of blunt abdominopelvic trauma with combined hemoperitoneum and pelvic fractures is challenging for trauma surgeons. Although angioembolization can achieve hemostasis in most visceral organ injuries and pelvic fractures after blunt abdominal trauma, it cannot effectively control hemorrhage in patients with blunt bowel mesenteric injury (BBMI). This study aimed to determine the risk factors associated with hemodynamically unstable patients with BBMI and to test the hypothesis that pelvic fracture is an independent risk factor for patients with unstable BBMI and concomitant pelvic fracture to guide the therapeutic sequence for difficult-to-manage patients. This retrospective study reviewed the data of hospitalized patients with trauma between 2009 and 2021 and included 158 adult patients with surgically proven BBMI. The patients were divided on the basis of the presence of a shock episode before emergency laparotomy. The shock group included 44.3% of all patients in the study (n = 70). Clinical injury severity and prognosis for patients in the shock group were poorer than those for patients in the non-shock group, and more invasive treatments and transfusions were performed for patients in the shock group than for those in the non-shock group. Pelvic fractures were more frequently associated with the shock group than with the non-shock group (21.4% vs. 5.7%; p = 0.003). In multivariate analysis, the presence of intracerebral hemorrhage (odds ratio [OR] = 10.87, 95% confidence intervals [CIs]: 1.70-69.75) and rib fracture (OR = 5.94, 95% CIs = 1.06-33.45) was identified as an independent predictor of shock, whereas the effect of pelvic fracture did not achieve statistical significance (OR = 2.94, 95% CIs = 0.66-13.13) after adjusting for confounding factors. For patients with BBMI, outcomes need to be improved during early diagnosis, and treatments should be expeditiously performed on the basis of the rapid identification of unstable hemodynamic status. Our results support the recommendation of emergency laparotomy in unstable patients with concomitant pelvic fractures, followed by damage control TAE if needed.

Artificial-intelligence robot umpires in sailing race.

Today, many maritime nations have been promoting boat sports proactively, including sailing races. As sailing races are large-scale regattas that require massive workforces to monitor the game fairly; however, with limited match budgets and labors, Internet of Things (IoT) technology supports monitoring games has become a trend. This article proposes a robot umpire system in sailing races based on Artificial Intelligence (AI) techniques, using drones and AIoT technology to monitor sailing matches. When a large number of sailboats are in a match, and each sail along different routes, drones can monitor the entire game simultaneously. The features of this proposed approach are (1) The system recognizes images by Faster R-CNN, judging whether a sailboat uses a motor to accelerate; (2) The system detects conditions by edge computing; when cheating behaviors happen, it can notify the event holder immediately; (3) Advanced drone route plans can avoid collision incidents; (4) Improve the system recognition by federated learning. This study has implemented an experiment with real drones and installed IoT equipment on the drones for taking videos and recognizing. The experimental result has shown that the proposed approach is feasible and benefits the match's fairness. Additionally, umpires can review the violation details from the videos taken by the drones, supporting evidence for judging.

A Study of Leisure Constraints and Job Satisfaction of Middle-Aged and Elderly Health Care Workers in COVID-19 Environment.

The purpose of the study was to examine the leisure constraints and job satisfaction of middle-aged and elderly health care workers. The study employed a mixed research method, utilizing SPSS 22.0 and AMOS 23.0 statistical software to analyze 260 questionnaires using basic statistical tests, t-tests, ANOVA tests, and structural equation models, and then interviewed medical and public health workers and experts in the field, and the results were analyzed using multivariate verification analysis. The results showed that there was a significant low correlation between leisure constraints and job satisfaction among middle-aged and elderly health care workers (p < 0.01); interpersonal constraints and external job satisfaction factors were the main influencing factors; improving promotion opportunities and receiving appreciation increased job satisfaction; poor working environment and facilities, as well as the lack of achievement, were the main factors that reduced satisfaction; health factors, a lack of family support, no exercise partner, and a lack of extra budget are the key to leisure constraints. If the organization can provide nearby sports facilities for middle and high-age medical workers, improve welfare, and increase willingness to participate in leisure activities, physical and mental health can be improved. Finally, interpersonal interaction in leisure obstacles is the main reason for improving job satisfaction.

Role ofin-situhydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors.

This work investigates the effect of anin situhydrogen plasma treatment on gate bias stability and performance of amorphous InGaZnO thin-film transistors (TFTs) deposited by using atmospheric-pressure PECVD. The H2plasma-treateda-IGZO channel has shown significant improvement in bias stress induced instability with a minuscule threshold voltage shift (ΔVth) of 0.31 and -0.17 V under positive gate bias stress (PBS) and negative gate bias stress (NBS), respectively. With the aid of the energy band diagram, the proposed work demonstrates the formation of negative species O2-and positive species H2O+in the backchannel under PBS and NBS in addition to ionized oxygen vacancy (Vo) defects ata-IGZO/ZrO2interfaces are the reason for gate bias instability which could be effectively suppressed within situH2plasma treatment. From the experimental result, it is observed that the electrical performance such as field-effect mobility (µFE), on-off current ratio (Ion/Ioff), and subthreshold swing improved significantly byin situH2plasma treatment with passivation of interface trap density and bulk trap defects.

Effects of Microwave and Furnace Annealing for P-Type SnO Thin Film Material in Oxygen Ambient.

Transparent conductive oxide (TCO) semiconductors are attracted considerable attention due to a wide range of applications, such as flat panel display (FPD), touch panels, solar cells, and other optoelectronic devices. Owing to the different carrier conduction paths between n-type and P-type TCOs, the n-type TCO used in TFTs usually have high Ion/Ioff current ratio (>107) and high electron mobility (>10 cm²/V·s), P-type TCO TFTs are both lower than that of n-type one. For complementary circuits design and applications, however, both P-type and n-type semiconductor materials are equally important. For SnO thin films, it is important to adjust the ratio of Sn2+ (SnO P-type) and Sn4+ (SnO2 n-type) in order to modulate the electrical characteristics. In this investigation of post treatment for SnO thin films, both microwave annealing (MWA) and furnace annealing process with 02 ambient are studied. The results show that SnO thin films are optimized at 300 °C, 30 minutes furnace annealing, the P-type SnO/SnO2 thin film shows surface mean roughness 0.168 nm, [Sn2+]/[Sn4+] ratio as 0.838, at least 80% transmittance between 380 nm-700 nm visible light. Withthe results, SnO can be even used to fabricate high performance P-type thin film transistors (TFTs) device for future applications.

Long-Term Trends and Predictors of Medical Resource Utilization and Medical Outcomes in Inguinal Hernia Repair: A Nationwide Cohort Study.

BACKGROUND: Few studies have comprehensively and systematically analyzed nationwide samples. This study purposed to explore temporal trends and predictors of medical resource utilization and medical outcomes in these patients to obtain data that can be used to improve healthcare policies and to support clinical and administrative decision-making. METHODS: This study used nationwide population data contained in the Longitudinal Health Insurance Database of Taiwan. The 14,970 inguinal hernia repair patients were enrolled in this study (age range, 18-100 years) from 1997 to 2013 in Taiwan. After temporal trends analysis of demographic characteristics, clinical characteristics, and institutional characteristics, predictors of postoperative medical resource utilization and medical outcomes were evaluated through multiple linear regression analysis and Cox regression analysis. RESULTS: The prevalence of inguinal hernia repair per 100,000 population significantly decreased from 195.38 in 1997 to 39.66 in 2013 (p < 0.05). Demographic characteristics, clinical characteristics, and institutional characteristics were significantly associated with postoperative medical resource utilization and medical outcomes (p < 0.05). Of these characteristics, both surgeon volume and hospital volume had the strongest association. CONCLUSIONS: The inguinal hernia repair prevalence rate gradually decreased during the study period. Demographic characteristics, clinical characteristics, and institutional characteristics had strong associations with postoperative medical resource utilization and medical outcomes. Furthermore, hospital volume and surgeon volume had the strongest associations with postoperative medical resource utilization and medical outcomes. Additionally, providing the education needed to make the most advantageous medical decisions would be a great service not only to patients and their families, but also to the general population.

Does inappropriate initial antibiotic therapy affect in-hospital mortality of patients in the emergency department with Escherichia coli and Klebsiella pneumoniae bloodstream infections?

Extended-spectrum ß-lactamase (ESBL)-positive bloodstream infection (BSI) is on the rise worldwide. The purpose of this study is to evaluate the impact of inappropriate initial antibiotic therapy (IIAT) on in-hospital mortality of patients in the emergency department (ED) with Escherichia coli and Klebsiella pneumoniae BSIs. This retrospective single-center cohort study included all adult patients with E. coli and K. pneumoniae BSIs between January 2007 and December 2013, who had undergone a blood culture test and initiation of antibiotics within 6 h of ED registration time. Multiple logistic regression was used to adjust for bacterial species, IIAT, time to antibiotics, age, sex, quick Sepsis Related Organ Failure Assessment (qSOFA) score ⩾ 2, and comorbidities. A total of 3533 patients were enrolled (2967 alive and 566 deceased, in-hospital mortality rate 16%). The patients with K. pneumoniae ESBL-positive BSI had the highest mortality rate. Non-survivors had qSOFA scores ⩾ 2 (33.6% vs 9.5%, P < 0.001), more IIAT (15.0% vs 10.7%, P = 0.004), but shorter mean time to antibiotics (1.70 vs 1.84 h, P < 0.001). A qSOFA score ⩾ 2 is the most significant predictor for in-hospital mortality; however, IIAT and time to antibiotics were not significant predictors in multiple logistic regression analysis. In subgroup analysis divided by qSOFA scores, IIAT was still not a significant predictor. Severity of the disease (qSOFA score ⩾ 2) is the key factor influencing in-hospital mortality of patients with E. coli and K. pneumoniae BSIs. The time to antibiotics and IIAT were not significant predictors because they in turn were affected by disease severity.

Using Long Short-Term Memory for Building Outdoor Agricultural Machinery.

Today, climate change has caused a decrease in agricultural output or overall yields that are not as expected; however, with the ongoing population explosion, many undeveloped countries have transformed into emerging countries and have transformed farmland to be used in other types of applications. The resulting decline in agricultural output further increases the severity of the food crisis. In this context, this study proposes an outdoor agricultural robot that uses Long Short-Term Memory (LSTM). The key features of this innovation include: (1) the robot is portable, and it uses green power to reduce installation cost, (2) the system combines the current environment with weather forecasts through LSTM to predict the correct timing for watering, (3) detecting the environment and utilizing information from weather forecasts can help the system to ensure that growing conditions are suitable for the crops, and (4) the robot is mainly for outdoor applications because such farms lack sufficient electricity and water resources, which makes the robot critical for environmental control and resource allocation. The experimental results indicate that the robot developed in this study can detect the environment effectively to control electricity and water resources. Additionally, because the system is planned to increase agricultural output significantly, the study predicts the variables through multivariate LSTM, which controls the power supply from the solar power system.

Medical Liability of Residents in Taiwan Criminal Court: An Analysis of Closed Malpractice Cases.

OBJECTIVE: By analyzing closed criminal malpractice claims involving resident physicians, we aimed to clarify the characteristics of litigations and examine the litigious errors leading to guilty verdicts. DESIGN: A retrospective descriptive study. Setting/Study Participants. The verdicts pertaining to physicians recorded on the national database of the Taiwan justice system were reviewed. Main Outcome Measures. The characteristics of litigations were documented. Negligence and guilty verdicts were further analyzed to identify litigious errors. RESULTS: Between January 1, 2000, and December 31, 2014, from a total of 436 closed criminal malpractice cases, 40 included resident physicians. Five (12.5%) cases received guilty verdicts with mean imprisonment sentences of 5.4 ± 4.1 months. An average of 77.2 months was required for the final adjudication, and surgery residents were involved most frequently (38.9%). Attending physicians were codefendants in 82.5% of cases and were declared guilty in 60% of them. Sepsis (37.5%) was the most common disease in the 40 cases examined, followed by operation/procedure complications (25%). Performance errors (70%) were more than twice as common than diagnostic errors (30%), but the percentage of guilty verdicts in performance error cases was much lower (7.1% vs. 25%). Four negligence cases received nonguilty verdicts, which were mostly due to lack of causation. CONCLUSION: Closed criminal malpractice cases involving residents took on average 6.22 years to conclude. Performance errors accounted for 70% of cases, with treatment of sepsis and operation/procedure complications predominant. To reduce medicolegal risk, residents should learn experiences from analyzing malpractice cases to avoid similar litigious pitfalls.

Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing.

Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory, such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor. Applied Physics Letters, 101, p.132901).

Effects of P-Type SnOx Thin-Film Transistors with N2 and O2 Ambient Furnace Annealing.

Recently oxide-based thin-film transistors (TFTs) are investigated for emerging applications of the next generation display devices and other electronic circuits (Fortunato, E., et al., 2012. Oxide semiconductor thin-film transistors: A review of recent advances. Advanced Materials, 24, pp.2945-2986). Despite of the great success in n-type oxide semiconductors with high transparency and high field-effect mobility, high performance P-type oxide TFTs are so highly desired that complementary circuits can be realized with low power and high performance (Ou, W.C., et al., 2008. Anomalous P-channel amorphous oxide transistors based on tin oxide and their complementary circuits. Applied Physics Letters, 92, p.122113). There are some oxides such as SnO, CuO, Cu2O and NiO are regarded as promising P-type semiconductor materials. In this investigation, tin oxide SnOx is fabricated to be active layer for TFTs device, and furnace annealing with several combinations of nitrogen and oxygen ambient is compared to enhance the electrical characteristics of P-type SnOx TFTs (Park, K.S., et al., 2009. High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability. Electrochemical and Solid-State Lett., 12, pp.H256-H258). The results show that with N2+O2 ambient, 30 minutes furnace annealing, the P-type SnOx TFTs device shows better performance with mobility (µFE) 0.883 cm²/V · S, threshold voltage (VT) -4.63 V, subthreshold swing (SS) 1.15 V/decade, and Ion/Ioff ratio 1.01×103.

Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment.

Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm²/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780-1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497-1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114-5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (µFE) 19.7 cm²/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.

Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer.

Non-volatile memory (NVM) is essential in almost every consumer electronic products. The most prevalent NVM used nowadays is flash memory (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Res. Letters, 9(1), p.526). However, some bottlenecks of flash memory have been identified, such as high operation voltage, low operation speed, and poor retention time. Resistive random access memory (RRAM) is considered to be the most promising one to become the next generation NVM device since its simple structure, fast program/erase speed, and low power consumption. In this experiment, the RRAM device is fabricated, and its IGZO (memory) layer is deposited with AP-PECVD technique which can reduce cost of the process. Microwave annealing (MWA) is used to enhance electrical characteristics of the RRAM device (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga- Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment results show that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics under bipolar operation, all forming/set/reset voltage for RRAM device is simultaneously lowered.

The Ottawa subarachnoid hemorrhage clinical decision rule for classifying emergency department headache patients.

BACKGROUND: Subarachnoid hemorrhage (SAH) is a serious cause of headaches. The Ottawa subarachnoid hemorrhage (OSAH) rule helps identify SAH in patients with acute nontraumatic headache with high sensitivity, but provides limited information for identifying other intracranial pathology (ICP). OBJECTIVES: To assess the performance of the OSAH rule in emergency department (ED) headache patients and evaluate its impact on the diagnosis of intracranial hemorrhage (ICH) and other ICP. METHOD: We conducted a retrospective cohort study from January 2016 to March 2017. Patients with acute headache with onset within 14 days of the ED visit, were included. We excluded patients with head trauma that occurred in the previous 7 days, new onset of abnormal neurologic findings, or consciousness disturbance. According to the OSAH rule, patients with any included predictors required further investigation. RESULTS: Of 913 patients were included, 15 of them were diagnosed with SAH. The OSAH rule had 100% (95% CI, 78.2%-100%) sensitivity and 37.0% (95% CI, 33.8-40.2%) specificity for identifying SAH. Twenty-two cases were identified as SAH or ICH with 100% sensitivity (95% CI, 84.6%-100%) and 37.3% (95% CI, 34.1%-40.5%) specificity. As for non-hemorrhagic ICP, both the sensitivity and negative predictive values (NPV) decreased to 75.0% (95% CI, 53.3%-90.2%) and 98.2% (95% CI, 96.1%-99.3%), respectively. CONCLUSIONS: The OSAH rule had 100% sensitivity and NPV for diagnosing SAH and ICH with acute headache. The sensitivity and specificity were lower for non-hemorrhagic ICP. The OSAH rule may be an effective tool to exclude acute ICH and SAH in our setting.

Metformin Affects Serum Lactate Levels in Predicting Mortality of Patients with Sepsis and Bacteremia.

This study determined if the use of metformin affected the prognostic value of hyperlactatemia in predicting 28-day mortality among patients with sepsis and bacteremia. We enrolled adult diabetic patients with sepsis and bacteremia. Of 590 patients, 162 and 162 metformin users and nonusers, respectively, were selected in propensity matching. The mean serum lactate levels in metformin users were higher than those in nonusers (4.7 vs. 3.9 mmol/L, p = 0.044). We divided the patients into four groups based on quick Sepsis-related Organ Failure Assessment (qSOFA) scores. No significant difference was found among nonusers with qSOFA score <2, nonusers with qSOFA score ≥2, and metformin users with qSOFA score <2. The lactate levels in metformin users with qSOFA score ≥2 were higher than those in other groups, and significant differences were found in both nonsurvivors (8.9 vs. 4.6 mmol/L, p = 0.027) and survivors (6.4 vs. 3.8 mmol/L, p = 0.049) compared with metformin users with qSOFA score <2. The best cut-off point to predict 28-day mortality in metformin users (5.9 mmol/L; area under the receiver operating characteristic curve (AUROC), 0.66; 95% confidence interval (CI), 0.55⁻0.77) was higher than that in nonusers (3.6 mmol/L; AUROC 0.63; 95% CI, 0.56⁻0.70). Metformin users had higher lactate levels than nonusers in increasing sepsis severity. Serum lactate levels could be useful in predicting mortality in patients using metformin, but higher levels are required to obtain more precise results.

The effect of peer influence on the use of CT by emergency physicians for patients with headaches.

BACKGROUND: It is challenging for emergency physicians (EPs) to distinguish between patients with life-threatening and benign headaches. We examined the effect of peer influence on computed tomography use by EPs for patients with headache and evaluated the peer influence effect in EPs with different levels of risk tolerance. METHODS: We conducted a before- and after-retrospective case review, and administered the Risk-Taking subscale of the Jackson Personality Index to attending physicians. Each EP computed tomography (CT) use rate, patient number, and CT use, were e-mailed every two months to enhance EP team norm and establish a trend in behavior. RESULTS: Of the 665 (before intervention) and 669 (after intervention) patients with headache, 206 (31%) and 171 (25.6%) underwent brain CT scans, respectively. Decreased use of CT examination was found in the post-intervention group (OR = 0.758, 95% CI: 0.593-0.967), especially for most risk-tolerant physicians (OR = 0.530, 95% CI: 0.311-0.889). There was prolonged ED length of stay (LOS) in the pre-intervention group (OR = 51.52, 95% CI: 26.998-76.050). CONCLUSIONS: We observed that peer influence is an effective way to improve CT use rate and emergency department LOS for patients with isolated headache, especially for most risk-tolerant physicians. These findings could enhance the development of appropriate guidelines to assist ED physicians' CT use.

The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.

Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, flexible, transmission, and uniformity. The thin film transistors (TFTs) with a-IGZO thin film as active layer perform higher field-effect mobility (>10 cm²/V·S), larger Ion/Ioff ratio (106), smaller subthreshold swing and better stability against electrical stress. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.

Investigation of Electrical Characteristics on LaAlO3/ZrO2/IGZO TFTs with Microwave Annealing.

Conventional thin film transistor suffered from high threshold voltage, poor subthreshold swing, and high operation voltage. These shortcomings make the traditional thin film transistor does not meet the needs with the high-performance, high-resolution, low temperature and energy conservation nowadays. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is promising to replace conventional furnace annealing and applied in the investigation. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. With adjusting the power/time of microwave annealing, the effect on electrical characteristics of a-IGZO TFTs is investigated.

Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatment.

TFT panel production process can be divided into three kinds of technology. There have amorphous silicon (a-Si), low-temperature polysilicon (LTPS) and amorphous IGZO (a-IGZO) oxide. Traditional amorphous silicon (a-Si) silicon has a lot of advantages such as good productivity, short process and low-cost. It also has a lot of shortcomings on these applications on TFTs such as photosensitivity, light degradation, and opacity, etc. The dispute of the material based on a-Si:H as an active layer in TFT is low field effect mobility (~1 cm²/V·S) (M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984)), photo sensitivity (low band gap about 1.7 V) and high deposition temperature (~400 °C) (M. Shur, et al., J. Appl. Phys. 66, 3371 (1989); K. khakzar and E. H. Lueder, IEEE Trans. Electron Devices 39, 1438 (1992)). Amorphous In-Ga-Zn-O (IGZO) had attracted attention that compared with the conventional a-Si:H, in the past three years, a-IGZO thin film transistors is more popular which compared with the other oxide semiconductors, because of its larger Ion/Ioff ratio (>106, smaller subthreshold swing (SS), better field-effect mobility and better stability against electrical stress. Hydrogen plasma treatment is applied in improving a-IGZO TFTs active layer, which is fabricated by atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD), the electrical characteristics of a-IGZO TFTs is investigated.