Correlated Charge Density Wave Insulators in Chirally Twisted Triple Bilayer Graphene.

Electrons residing in a flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work, we demonstrate chirally twisted triple bilayer graphene, a new moiré structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition to the correlated insulators showing at integer moiré fillings, commonly attributed to interaction induced symmetry broken isospin flavors in graphene, we observe abundant insulating states at half-integer moiré fillings, suggesting a longer-range interaction and the formation of charge density wave insulators which spontaneously break the moiré translation symmetry. With weak out-of-plane magnetic field applied, as observed half-integer filling states are enhanced and more quarter-integer filling states appear, pointing toward further quadrupling moiré unit cells. The insulating states at fractional fillings combined with Hartree-Fock calculations demonstrate the observation of a new type of correlated charge density wave insulators in graphene and points to a new accessible twist manner engineering correlated moiré electronics.

Three-dimensional hidden phase probed by in-plane magnetotransport in kagome metal CsV3Sb5 thin flakes.

Transition metal compounds with kagome structure have been found to exhibit a variety of exotic structural, electronic, and magnetic orders. These orders are competing with energies very close to each other, resulting in complex phase transitions. Some of the phases are easily observable, such as the charge density wave (CDW) and the superconducting phase, while others are more challenging to identify and characterize. Here we present magneto-transport evidence of a new phase below ~ 35 K in the kagome topological metal CsV3Sb5 (CVS) thin flakes between the CDW and the superconducting transition temperatures. This phase is characterized by six-fold rotational symmetry in the in-plane magnetoresistance (MR) and is connected to the orbital current order in CVS. Furthermore, the phase is characterized by a large in-plane negative magnetoresistance, which suggests the existence of a three-dimensional, magnetic field-tunable orbital current ordered phase. Our results highlight the potential of magneto-transport to reveal the interactions between exotic quantum states of matter and to uncover the symmetry of such hidden phases.

High-Temperature Anomalous Metal States in Iron-Based Interface Superconductors.

The nature of the anomalous metal state has been a major puzzle in condensed matter physics for more than three decades. Here, we report systematic investigation and modulation of the anomalous metal states in high-temperature interface superconductor FeSe films on SrTiO_{3} substrate. Remarkably, under zero magnetic field, the anomalous metal state persists up to 20 K in pristine FeSe films, an exceptionally high temperature standing out from previous observations. In stark contrast, for the FeSe films with nanohole arrays, the characteristic temperature of the anomalous metal state is considerably reduced. We demonstrate that the observed anomalous metal states originate from the quantum tunneling of vortices adjusted by the Ohmic dissipation. Our work offers a perspective for understanding the origin and modulation of the anomalous metal states in two-dimensional bosonic systems.

Rules for dissipationless topotronics.

Topological systems hosting gapless boundary states have attracted huge attention as promising components for next-generation information processing, attributed to their capacity for dissipationless electronics. Nevertheless, recent theoretical and experimental inquiries have revealed the emergence of energy dissipation in precisely quantized electrical transport. Here, we present a criterion for the realization of truly no-dissipation design, characterized as Nin = Ntunl + Nbs, where Nin, Ntunl, and Nbs represent the number of modes participating in injecting, tunneling, and backscattering processes, respectively. The key lies in matching the number of injecting, tunneling, and backscattering modes, ensuring the equilibrium among all engaged modes inside the device. Among all the topological materials, we advocate for the indispensability of Chern insulators exhibiting higher Chern numbers to achieve functional devices and uphold the no-dissipation rule simultaneously. Furthermore, we design the topological current divider and collector, evading dissipation upon fulfilling the established criterion. Our work paves the path for developing the prospective topotronics.

Dissipationless layertronics in axion insulator MnBi2Te4.

Surface electrons in axion insulators are endowed with a topological layer degree of freedom followed by exotic transport phenomena, e.g., the layer Hall effect. Here, we propose that such a layer degree of freedom can be manipulated in a dissipationless way based on the antiferromagnetic [Formula: see text] with tailored domain structure. This makes [Formula: see text] a versatile platform to exploit the 'layertronics' to encode, process and store information. Importantly, the layer filter, layer valve and layer reverser devices can be achieved using the layer-locked chiral domain wall modes. The dissipationless nature of the domain wall modes makes the performance of the layertronic devices superior to those in spintronics and valleytronics. Specifically, the layer reverser, a layer version of the Datta-Das transistor, also fills up the blank in designing the valley reverser in valleytronics. Our work sheds light on constructing new generation electronic devices with high performance and low-energy consumption in the framework of layertronics.

High spin axion insulator.

Axion insulators possess a quantized axion field θ = π protected by combined lattice and time-reversal symmetry, holding great potential for device applications in layertronics and quantum computing. Here, we propose a high-spin axion insulator (HSAI) defined in large spin-s representation, which maintains the same inherent symmetry but possesses a notable axion field θ = (s + 1/2)2π. Such distinct axion field is confirmed independently by the direct calculation of the axion term using hybrid Wannier functions, layer-resolved Chern numbers, as well as the topological magneto-electric effect. We show that the guaranteed gapless quasi-particle excitation is absent at the boundary of the HSAI despite its integer surface Chern number, hinting an unusual quantum anomaly violating the conventional bulk-boundary correspondence. Furthermore, we ascertain that the axion field θ can be precisely tuned through an external magnetic field, enabling the manipulation of bonded transport properties. The HSAI proposed here can be experimentally verified in ultra-cold atoms by the quantized non-reciprocal conductance or topological magnetoelectric response. Our work enriches the understanding of axion insulators in condensed matter physics, paving the way for future device applications.

Emergent energy dissipation in quantum limit.

Energy dissipation is of fundamental interest and crucial importance in quantum systems. However, whether energy dissipation can emerge without backscattering inside topological systems remains a question. As a hallmark, we propose a microscopic picture that illustrates energy dissipation in the quantum Hall (QH) plateau regime of graphene. Despite the quantization of Hall, longitudinal, and two-probe resistances (dubbed as the quantum limit), we find that the energy dissipation emerges in the form of Joule heat. It is demonstrated that the non-equilibrium energy distribution of carriers plays much more essential roles than the resistance on energy dissipation. Eventually, we suggest probing the phenomenon by measuring local temperature increases in experiments and reconsidering the dissipation typically ignored in realistic topological circuits.

Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators.

The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi2Te4 thin films under perpendicular electric fields. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but non-zero layer-locked hidden Berry curvature in real space. We show that, compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios.

Progress on the antiferromagnetic topological insulator MnBi2Te4.

Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed matter physics. They represent a new class of materials exhibiting nontrivial topological phases, and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic orders. In particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4 from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4 thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.

Emergent superconductivity in topological-kagome-magnet/metal heterostructures.

Itinerant kagome lattice magnets exhibit many novel correlated and topological quantum electronic states with broken time-reversal symmetry. Superconductivity, however, has not been observed in this class of materials, presenting a roadblock in a promising path toward topological superconductivity. Here, we report that novel superconductivity can emerge at the interface of kagome Chern magnet TbMn6Sn6 and metal heterostructures when elemental metallic thin films are deposited on either the top (001) surface or the side surfaces. Superconductivity is also successfully induced and systematically studied by using various types of metallic tips on different TbMn6Sn6 surfaces in point-contact measurements. The anisotropy of the superconducting upper critical field suggests that the emergent superconductivity is quasi-two-dimensional. Remarkably, the interface superconductor couples to the magnetic order of the kagome metal and exhibits a hysteretic magnetoresistance in the superconducting states. Taking into account the spin-orbit coupling, the observed interface superconductivity can be a surprising and more realistic realization of the p-wave topological superconductors theoretically proposed for two-dimensional semiconductors proximity-coupled to s-wave superconductors and insulating ferromagnets. Our findings of robust superconductivity in topological-Chern-magnet/metal heterostructures offer a new direction for investigating spin-triplet pairing and topological superconductivity.

Half-quantized helical hinge currents in axion insulators.

Fractional quantization can emerge in noncorrelated systems due to the parity anomaly, while its condensed matter realization is a challenging problem. We propose that in axion insulators (AIs), parity anomaly manifests a unique fractional boundary excitation: the half-quantized helical hinge currents. These helical hinge currents microscopically originate from the lateral Goos-Hänchen (GH) shift of massless side-surface Dirac electrons that are totally reflected from the hinges. Meanwhile, due to the presence of the massive top and bottom surfaces of the AI, the helical current induced by the GH shift is half-quantized. The semiclassical wave packet analysis uncovers that the hinge current has a topological origin and its half quantization is robust to parameter variations. Lastly, we propose an experimentally feasible six-terminal device to identify the half-quantized hinge channels by measuring the nonreciprocal conductances. Our results advance the realization of the half-quantization and topological magnetoelectric responses in AIs.

Giant electrically tunable magnon transport anisotropy in a van der Waals antiferromagnetic insulator.

Anisotropy is a manifestation of lowered symmetry in material systems that have profound fundamental and technological implications. For van der Waals magnets, the two-dimensional (2D) nature greatly enhances the effect of in-plane anisotropy. However, electrical manipulation of such anisotropy as well as demonstration of possible applications remains elusive. In particular, in-situ electrical modulation of anisotropy in spin transport, vital for spintronics applications, has yet to be achieved. Here, we realized giant electrically tunable anisotropy in the transport of second harmonic thermal magnons (SHM) in van der Waals anti-ferromagnetic insulator CrPS4 with the application of modest gate current. Theoretical modeling found that 2D anisotropic spin Seebeck effect is the key to the electrical tunability. Making use of such large and tunable anisotropy, we demonstrated multi-bit read-only memories (ROMs) where information is inscribed by the anisotropy of magnon transport in CrPS4. Our result unveils the potential of anisotropic van der Waals magnons for information storage and processing.

Impurity effects on the zeroth pseudo-Landau level in twisted bilayer graphene.

We theoretically study the impurity effects on the zeroth pseudo-Landau level (PLL) representation of the flat band in a twisted bilayer graphene (TBG) system. Our research investigates the impact of both short-range and long-range charged impurities on the PLL using the self-consistent Born approximation and random phase approximation. Our findings indicate that short-range impurities have a significant effect on the broadening of the flat band due to impurity scattering. In contrast, the impact of long-range charged impurities on the broadening of the flat band is relatively weak, and the primary impact of the Coulomb interaction is the splitting of the PLL degeneracy when a certain purity condition is satisfied. As a result, spontaneous ferromagnetic flat bands with nonzero Chern numbers emerge. Our work sheds light on the effect of impurities on the quantum Hall plateau transition in TBG systems.

Anomalous quantized plateaus in two-dimensional electron gas with gate confinement.

Quantum information can be coded by the topologically protected edges of fractional quantum Hall (FQH) states. Investigation on FQH edges in the hope of searching and utilizing non-Abelian statistics has been a focused challenge for years. Manipulating the edges, e.g. to bring edges close to each other or to separate edges spatially, is a common and essential step for such studies. The FQH edge structures in a confined region are typically presupposed to be the same as that in the open region in analysis of experimental results, but whether they remain unchanged with extra confinement is obscure. In this work, we present a series of unexpected plateaus in a confined single-layer two-dimensional electron gas (2DEG), which are quantized at anomalous fractions such as 9/4, 17/11, 16/13 and the reported 3/2. We explain all the plateaus by assuming surprisingly larger filling factors in the confined region. Our findings enrich the understanding of edge states in the confined region and in the applications of gate manipulation, which is crucial for the experiments with quantum point contact and interferometer.

Bulk-boundary correspondence in disordered non-Hermitian systems.

The bulk-boundary correspondence (BBC) refers to the consistency between eigenvalues calculated under open and periodic boundary conditions. This consistency can be destroyed in systems with non-Hermitian skin effect (NHSE). In spite of the great success of the generalized Brillouin zone (GBZ) theory in clean non-Hermitian systems, the applicability of GBZ theory is questionable when the translational symmetry is broken. Thus, it is of great value to rebuild the BBC for disordered samples, which extends the application of GBZ theory in non-Hermitian systems. Here, we propose a scheme to reconstruct BBC, which can be regarded as the solution of an optimization problem. By solving the optimization problem analytically, we reconstruct the BBC and obtain the modified GBZ theory in several prototypical disordered non-Hermitian models. The modified GBZ theory provides a precise description of the fantastic NHSE, which predicts the asynchronous-disorder-reversed NHSE's directions.

Discrete scale invariance of the quasi-bound states at atomic vacancies in a topological material.

Recently, log-periodic quantum oscillations have been detected in the topological materials zirconium pentatelluride (ZrTe5) and hafnium pentatelluride (HfTe5), displaying an intriguing discrete scale invariance (DSI) characteristic. In condensed materials, the DSI is considered to be related to the quasi-bound states formed by massless Dirac fermions with strong Coulomb attraction, offering a feasible platform to study the long-pursued atomic-collapse phenomenon. Here, we demonstrate that a variety of atomic vacancies in the topological material HfTe5 can host the geometric quasi-bound states with a DSI feature, resembling an artificial supercritical atom collapse. The density of states of these quasi-bound states is enhanced, and the quasi-bound states are spatially distributed in the "orbitals" surrounding the vacancy sites, which are detected and visualized by low-temperature scanning tunneling microscope/spectroscopy. By applying the perpendicular magnetic fields, the quasi-bound states at lower energies become wider and eventually invisible; meanwhile, the energies of quasi-bound states move gradually toward the Fermi energy (EF). These features are consistent with the theoretical prediction of a magnetic field-induced transition from supercritical to subcritical states. The direct observation of geometric quasi-bound states sheds light on the deep understanding of the DSI in quantum materials.

Transport Theory of Half-Quantized Hall Conductance in a Semimagnetic Topological Insulator.

Recently, a half-quantized Hall conductance (HQHC) plateau was experimentally observed in a semimagnetic topological insulator heterostructure. However, the heterostructure was metallic with a nonzero longitudinal conductance, which contradicts the common belief that quantized Hall conductance is usually observed in insulators. In this work, we systematically study the surface transport of a semimagnetic topological insulator with both gapped and gapless Dirac surfaces in the presence of dephasing process. In particular, we reveal that the HQHC is directly related to the half-quantized chiral current along the edge of a strongly dephasing metal. The Hall conductance keeps a half-quantized value for large dephasing strengths, while the longitudinal conductance varies with Fermi energies and dephasing strengths. Furthermore, we evaluate both the conductance and resistance as a function of the temperature, which is consistent with the experimental results. Our results not only provide the microscopic transport mechanism of the HQHC, but also are instructive for the probe of the HQHC in future experiments.

New Type of Anticommutative Dynamical Magnetoelectric Response.

Axion field induced topological magnetoelectric response has attracted lots of attention since it was first proposed by Qi et al. [Phys. Rev. B 78, 195424 (2008).PRBMDO1098-012110.1103/PhysRevB.78.195424]. Here we find a new type of anticommutative magnetoelectric response ß^{ξ}(ω), which can induce a dynamical magnetoelectric current driven by a time-varying magnetic field. Unlike the Chern-Simons axion term, this magnetoelectric response term is gauge independent and nonquantized, and manifests in the systems breaking the symmetries of the time reversal, inversion, and mirror. In particular, we propose the antiferromagnetic material Mn_{2}Bi_{2}Te_{5} as a material candidate to observe dynamical magnetoelectric current, in which a large magnetoelectric response term ß^{ξ}(ω) originates from band inversion.