High-Sensitivity CMOS-Integrated Floating Gate-Based UVC Sensors.

We report on novel UVC sensors based on the floating gate (FG) discharge principle. The device operation is similar to that of EPROM non-volatile memories UV erasure, but the sensitivity to ultraviolet light is strongly increased by using single polysilicon devices of special design with low FG capacitance and long gate periphery (grilled cells). The devices were integrated without additional masks into a standard CMOS process flow featuring a UV-transparent back end. Low-cost integrated UVC solar blind sensors were optimized for implementation in UVC sterilization systems, where they provided feedback on the radiation dose sufficient for disinfection. Doses of ~10 µJ/cm2 at 220 nm could be measured in less than a second. The device can be reprogrammed up to 10,000 times and used to control ~10-50 mJ/cm2 UVC radiation doses typically employed for surface or air disinfection. Demonstrators of integrated solutions comprising UV sources, sensors, logics, and communication means were fabricated. Compared with the existing silicon-based UVC sensing devices, no degradation effects that limit the targeted applications were observed. Other applications of the developed sensors, such as UVC imaging, are also discussed.

Embedded UV Sensors in CMOS SOI Technology.

We report on ultraviolet (UV) sensors employing high voltage PIN lateral photodiode strings integrated into the production RF SOI (silicon on isolator) CMOS platform. The sensors were optimized for applications that require measurements of short wavelength ultraviolet (UVC) radiation under strong visible and near-infrared lights, such as UV used for sterilization purposes, e.g., COVID-19 disinfection. Responsivity above 0.1 A/W in the UVC range was achieved, and improved blindness to visible and infrared (IR) light demonstrated by implementing back-end dielectric layers transparent to the UV, in combination with differential sensing circuits with polysilicon UV filters. Degradation of the developed sensors under short wavelength UV was investigated and design and operation regimes allowing decreased degradation were discussed. Compared with other embedded solutions, the current design is implemented in a mass-production CMOS SOI technology, without additional masks, and has high sensitivity in UVC.

Neuroprotection by delayed triple therapy following sarin nerve agent insult in the rat.

The development of refractory status epilepticus (SE) induced by sarin intoxication presents a therapeutic challenge. In our current research we evaluate the efficacy of a delayed combined triple treatment in ending the abnormal epileptiform seizure activity (ESA) and the ensuing of long-term neuronal insult. SE was induced in male Sprague-Dawley rats by exposure to 1.2LD50 sarin insufficiently treated by atropine and TMB4 (TA) 1 min later. Triple treatment of ketamine, midazolam and valproic acid was administered 30 min or 1 h post exposure and was compared to a delayed single treatment with midazolam alone. Toxicity and electrocorticogram activity were monitored during the first week and behavioral evaluation performed 3 weeks post exposure followed by brain biochemical and immunohistopathological analyses. The addition of both single and triple treatments reduced mortality and enhanced weight recovery compared to the TA-only treated group. The triple treatment also significantly minimized the duration of the ESA, reduced the sarin-induced increase in the neuroinflammatory marker PGE2, the brain damage marker TSPO, decreased the gliosis, astrocytosis and neuronal damage compared to the TA+ midazolam or only TA treated groups. Finally, the triple treatment eliminated the sarin exposed increased open field activity, as well as impairing recognition memory as seen in the other experimental groups. The delayed triple treatment may serve as an efficient therapy, which prevents brain insult propagation following sarin-induced refractory SE, even if treatment is postponed for up to 1 h.

Exploring the impact of HIV infection and antiretroviral therapy on placenta morphology.

INTRODUCTION: Women living with HIV experience more adverse birth outcomes; the mechanisms are not fully understood. We examined placenta morphology and associations with birth outcomes in a Canadian cohort of women living with HIV (HIV+) on antiretroviral therapy (ART) from conception and HIV-uninfected (HIV-) women. METHODS: Term placentas from 94 women (40 HIV-, 54 HIV+) were studied. Trimmed placenta weight was collected. Placenta digital photos were used to compute morphometric parameters. Regression models investigated associations between log-transformed placenta parameters and birth outcomes. RESULTS: We observed a trend towards lower placenta weight and smaller placenta area in the HIV+ group, both of which were significantly associated with small for gestational age births. HIV+ serostatus was associated with 6-fold (95%CI 2-20) greater odds of having placenta area in the lowest quartile (<236 cm2). Cord marginality (distance from the edge) was significantly lower in the HIV+ group (p = 0.004), with 35% of placenta having an abnormal (marginal or velamentous) cord insertion vs. 12.5% in the HIV- group (p = 0.01). Velamentous cord insertion was seen in 13% of placentas in the HIV+ vs. 0% in HIV- group (p = 0.02). A significant correlation between cord marginality and placenta thickness was observed in the HIV- group, with a more marginal cord being associated with a thicker placenta. This correlation was not observed in the HIV+ group. HIV+ placentas exposed to protease inhibitors were significantly less circular compared to the HIV- group (p = 0.03). CONCLUSION: Our data suggest that HIV/ART exposure affects placenta morphology and is associated with higher rates of abnormal cord insertion.