Enhanced Electrical and Optical Properties of Bismuth Tantalum Oxide Thin Films through Graphene Oxide Doping.

In this study, a hybrid thin film was fabricated by doping graphene oxide in a bismuth tantalum oxide solution in the sol-gel state. The thin film was produced by a brush-coating process. The graphene oxide doping ratios used were 0, 5, and 15 wt %. In the process of producing the thin film, the prepared sol-gel solution generates contraction forces, owing to the shear stress from the bristles of the brush, forming a microgroove structure. This structure was confirmed through atomic force microscopy, transmission electron microscopy, and energy-dispersive spectroscopy analyses. As a result of line profile analysis in atomic force microscopy, the groove heights of the thin film surface at 0, 5, and 15 wt % doping were 110, 130, and 160 nm, respectively, and the width of all grooves was 1 µm. The width of all thin films was approximately 1 µm, and microgrooves were confirmed. Moreover, the hybrid thin-film formation was confirmed by X-ray photoelectron spectroscopy. By comparing the electrical properties of the bismuth tantalum oxide thin film without graphene oxide doping and the thin film doped with 15 wt % graphene oxide, it was demonstrated that the electro-optical properties increased excellently with graphene oxide doping. Typically, the threshold voltage was reduced by approximately 0.26 V. Based on these observations, graphene oxide doped bismuth tantalum oxide hybrid thin films can be considered as promising candidates for thin-film applications in next-generation displays.

Advanced thin films of indium-tin oxide doping with photosensitive polymer via embossing process.

We propose a sol-gel thin film formation process involving nanoimprint lithography. First, indium tin oxide was dissolved in 2-methoxyethanol at a ratio of 5:5 and the mixture were mixed with 10 wt% of a UV-curable. Subsequently, a polydimethylsiloxane sheet prepared by covering a silicon wafer with a polydimethylsiloxane mold was attached to a InSnO thin film to duplicate the nanostructure through UV irradiation exposure. The replicated nanostructured thin films formed about morphological and chemical composition changes on the surface, we progressed to x-ray photoelectron spectroscopy and atomic force microscopy analysis. Furthermore, atomic force microscopy image analysis showed superior patterned grooves for a UV exposure time of 3 min. A suitability test involving the measurement of the transmittance was performed for examining the suitability of the thin film for use in display devices.

High electrical characteristics through graphene oxide doping process on physicochemically reformed inorganic thin films.

This study investigated the improvement of the electro-optical properties of a liquid crystal (LC) cell fabricated through brush coating using graphene oxide (GO) doping. The physical deformation of the surface was analyzed using atomic force microscopy. The size of the groove increased as the GO dopant concentration increased, but the direction of the groove along the brush direction was maintained. X-ray photoelectron spectroscopy analysis confirmed that the number of C-C and O-Sn bonds increased as the GO concentration increased. Since the van der Waals force on the surface increases as the number of O-metal bonds increases, we were able to determine why the anchoring energy of the LC alignment layer increased. This was confirmed by residual DC voltage and anchoring energy measurements that were later performed. As the GO concentration increased, the width of the hysteresis curve decreased, indicating that the residual DC voltage decreased. Additionally, the 15% GO-doped sample exhibited a significant increase in its anchoring energy up to 1.34 × 10-3 J/m2, which is similar to that of rubbed polyimide. It also secured a high level of electro-optical properties and demonstrated potential as a next-generation thin-film display despite being produced via a simple brush-coating process.