TE/TM mode electro-optic conversion based on a titanium diffusion lithium niobate waveguide with a polarization-maintained fiber structure.

For the development of photonic integrated circuits and lithium niobate (L i N b O 3, LN) optical waveguide technology, the implementation and application of polarization devices based on LN are also becoming more widespread, where titanium (Ti)-diffused LN waveguides form the basis of many important electro-optic (EO) integrated optical devices. Moreover, utilizing polarization conversion has the potential to enhance both the effectiveness and capacity of optical transmission. Thus, we have presented an EO polarization mode converter packaging with PANDA polarization-maintaining optical fibers (PMFs) in the broadband wavelength range (1440-1620 nm) to obtain the multiwavelength modulation, featuring the wavelength tunability. Additionally, the fabricated device is able to achieve transverse electric (TE) to transverse magnetic (TM) mode conversion efficiently with the applied voltage of  ±, which provides high conversion efficiency. Importantly, our device also features a high-frequency response of about 600 MHz with overall insertion loss below 5 dB. The rapid development of LN-based polarization devices holds great promise for chip-integrated systems in the field of polarization telecommunication.

Broadband, Polarization-Sensitive, and Self-Powered High-Performance Photodetection of Hetero-Integrated MoS2 on Lithium Niobate.

High-performance photodetectors hold promising potential in optical communication and imaging systems. However, conventional counterparts are suffering narrow detection range, high power consumption, and poor polarization sensitivity. Characteristics originating from switchable polarization in ferroelectrics can be used to optimize the photo-to-electric procedure and improve the photodetection performance. In this regard, we constructed a configuration by integrating 2-dimensional molybdenum disulfide (MoS2) with ferroelectric lithium niobate (LiNbO3), resulting in the MoS2/LiNbO3 heterostructured photodetector. Benefiting from the pyroelectric effect of LiNbO3, the limitation of bandgap on the detection range can be broken, thus broadening the response band of the detector to 365 to 1,064 nm, as well as enabling the self-powered characteristic. Meanwhile, high carrier mobility and decent light absorbance of MoS2 introduce robust light-matter interactions with the underlying LiNbO3, leading to ultrafast rise/fall times of ≈150 µs/250 µs and switching ratios of up to ≈190. Moreover, the highest responsivity, specific detectivity, and external quantum efficiency achieved were 17.3 A·W-1, 4.3 × 1011 Jones, and 4,645.78%, respectively. Furthermore, because of the anisotropy of the spontaneous-polarized LiNbO3 substrate, the photocurrent of the device achieved a dichroic ratio of 7.42, comparing favorably to most MoS2-based photodetectors. This work demonstrates the integration potential between ferroelectric LiNbO3 and 2-dimensional materials for high-performance photodetection.

Directional Bloch surface wave coupling enabled by magnetic spin-momentum locking of light.

We study the magnetic spin-locking of optical surface waves. Through an angular spectrum approach and numerical simulations, we predict that a spinning magnetic dipole develops a directional coupling of light to transverse electric (TE) polarized Bloch surface waves (BSWs). A high-index nanoparticle as a magnetic dipole and nano-coupler is placed on top of a one-dimensional photonic crystal to couple light into BSWs. Upon circularly polarized illumination, it mimics the spinning magnetic dipole. We find that the helicity of the light impinging on the nano-coupler controls the directionality of emerging BSWs. Furthermore, identical silicon strip waveguides are configured on the two sides of the nano-coupler to confine and guide the BSWs. We achieve a directional nano-routing of BSWs with circularly polarized illumination. Such a directional coupling phenomenon is proved to be solely mediated by the optical magnetic field. This offers opportunities for directional switching and polarization sorting by controlling optical flows in ultra-compact architectures and enables the investigation of the magnetic polarization properties of light.

Controlled Adhesion of Ice-Toward Ultraclean 2D Materials.

The scalable 2D device fabrication and integration demand either the large-area synthesis or the post-synthesis transfer of 2D layers. While the direct synthesis of 2D materials on most targeted surfaces remains challenging, the transfer approach from the growth substrate onto the targeted surfaces offers an alternative pathway for applications and integrations. However, the current transfer techniques for 2D materials predominantly involve polymers and organic solvents, which are liable to contaminate or deform the ultrasensitive atomic layers. Here, novel ice-aided transfer and ice-stamp transfer methods are developed, in which water (ice) is the only medium in the entire process. In practice, the adhesion between various 2D materials and ice can be well controlled by temperature. Through such controlled adhesion of ice, it is shown that the new transfer methods can yield ultrahigh quality and exceptional cleanliness in transferred 2D flakes and continuous 2D films, and are applicable for a wide range of substrates. Furthermore, beyond transfer, ice can also be used for cleaning the surfaces of 2D materials at higher temperatures. These novel techniques can enable unprecedented ultraclean 2D materials surfaces and performances, and will contribute to the upcoming technological revolutions associated with 2D materials.

Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction.

Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. To date, several 2D ferroelectric materials have been unveiled, among which 2D In2Se3 is the most promising, as all the paraelectric (ß), ferroelectric (α) and antiferroelectric (ß') phases are found in 2D quintuple layers. However, the large-scale synthesis of 2D In2Se3 films with the desired phase is still absent, and the stability for each phase remains obscure. Here we show the successful growth of centimetre-scale 2D ß-In2Se3 film by chemical vapour deposition including distinct centimetre-scale 2D ß'-In2Se3 film by an InSe precursor. We also demonstrate that as-grown 2D ß'-In2Se3 films on mica substrates can be delaminated or transferred onto flexible or uneven substrates, yielding α-In2Se3 films through a complete phase transition. Thus, a full spectrum of paraelectric, ferroelectric and antiferroelectric 2D films can be readily obtained by means of the correlated polymorphism in 2D In2Se3, enabling 2D memory transistors with high electron mobility, and polarizable ß'-α In2Se3 heterophase junctions with improved non-volatile memory performance.

Phase and polarization modulation in two-dimensional In2Se3 via in situ transmission electron microscopy.

Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In2Se3 with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) ß' phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In2Se3 remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In2Se3. We achieve reversible AFE and out-of-plane FE phase transition in 2D In2Se3 by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In2Se3 can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.

Wavelength-Tunable Mid-Infrared Lasing from Black Phosphorus Nanosheets.

Van der Waals layered semiconductor materials own unique physical properties and have attracted intense interest in developing high-performance electronic and photonic devices. Among them, black phosphorus (BP) is distinct for its layer number-tuned direct band gap which spans from near- to mid-infrared (MIR) waveband. In addition, the puckered honey comb crystal lattice endows the material with highly linear-polarized emission and marked anisotropy in carrier transportation. These unique material properties render BP as an intriguing and promising building block for constructing mid-infrared-ranged coherent light sources. Here, a room temperature surface-emitting MIR laser based on single crystalline BP nanosheets coupled with a distributed Bragg reflector cavity is reported. MIR stimulated emission at 3611 nm is achieved with a near-unity linear polarization, which exhibits robust thermal stability up to 360 K. Most importantly, the lasing wavelength can be tuned from 3425 to 4068 nm by varying the cavity length via thickness control of BP layer. The demonstrated highly polarized lasing output and wavelength-tunable capacity of the proposed device scheme in MIR spectral range opens up promising opportunities for a broad array of applications in polarization-resolved IR imaging, range-finding, and free space quantum communications.

Probing and Manipulating Carrier Interlayer Diffusion in van der Waals Multilayer by Constructing Type-I Heterostructure.

van der Waals multilayer heterostructures have drawn increasing attention due to the potential for achieving high-performance photonic and optoelectronic devices. However, the carrier interlayer transportation behavior in multilayer structures, which is essential for determining the device performance, remains unrevealed. Here, we report a general strategy for studying and manipulating the carrier interlayer transportation in van der Waals multilayers by constructing type-I heterostructures, with a desired narrower bandgap monolayer acting as a carrier extraction layer. For heterostructures comprised of multilayer PbI2 and monolayer WS2, we find similar interlayer diffusion coefficients of ∼0.039 and ∼0.032 cm2 s-1 for electrons and holes in the PbI2 multilayer by fitting the time-resolved carrier dynamics based on the diffusion model. Because of the balanced carrier interlayer diffusion and the injection process at the heterointerface, the photoluminescence emission of the bottom WS2 monolayer is greatly enhanced by up to 106-fold at an optimized PbI2 thickness of the heterostructure. Our results provide valuable information on carrier interlayer transportation in van der Waals multilayer structures and pave the way for utilizing carrier behaviors to improve device performances.

Ultrahigh-Performance Optoelectronics Demonstrated in Ultrathin Perovskite-Based Vertical Semiconductor Heterostructures.

Two-dimensional (2D) atomic layered semiconductor (e.g., transition metal dichalcogenides, TMDCs) heterostructures display diverse novel interfacial carrier properties and have potential applications in constructing next generation highly compact electronics and optoelectronics devices. However, the optoelectronic performance of this kind of semiconductor heterostructures has difficulty reaching the expectations of practical applications, due to the intrinsic weak optical absorption of the atomic-thick component layers. Here, combining the extraordinary optoelectronic properties of quantum-confined organic-inorganic hybrid perovskite (PVK), we design an ultrathin PVK/TMDC vertical semiconductor heterostructure configuration and realize the controlled vapor-phase growth of highly crystalline few-nanometer-thick PVK layers on TMDCs monolayers. The achieved ultrathin PVKs show strong thickness-induced quantum confinement effect, and simultaneously form band alignment-engineered heterointerfaces with the underlying TMDCs, resulting in highly efficient interfacial charge separation and transport. Electrical devices constructed with the as-grown ultrathin PVK/WS2 heterostructures show ambipolar transport originating from p-type PVK and n-type WS2, and exhibit outstanding optoelectronic characteristics, with the optimized response time and photoresponsivity reaching 64 µs and 11174.2 A/W, respectively, both of which are 4 orders of magnitude better than the heterostructures with a thick PVK layer, and also represent the best among all previously reported 2D layered semiconductor heterostructures. This work provides opportunities for 2D vertical semiconductor heterostructures via incorporating ultrathin PVK layers in high-performance integrated optoelectronics.

Vapor growth of CdS nanowires/WS2 nanosheet heterostructures with sensitive photodetections.

Heterostructures based on two-dimensional (2D) transition metal dichalcogenides semiconductors are reported to be promising building-blocks for next-generation integrated optoelectronic systems, owing to their atomic thin interface and interface-induced properties. Previously reported works have mostly been directed to focus on the 2D/2D heterostructures, and their optoelectronic performance is still inferior to the expectations for practical applications, mainly attributed to their non-ideal optical absorption when the thickness is confined at atomic scale. In this work, we have reported on high sensitivity photodetectors based on one-dimensional (1D)/2D heterostructures consisting of CdS nanowire and WS2 nanosheets grown by direct chemical vapor deposition. The components of the heterostructures were confirmed by x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscope, photoluminescence and Raman spectra measurements, confirming the high quality heterostructures. Photodetectors were then fabricated based on the as-synthesized CdS/WS2 heterostructures, showing superior photodetection performances with a photoresponsivity of ∼50 A W-1 and an ultrahigh photodetectivity of ∼1012 Jones. Much higher responsivity of 5472 A W-1 and detectivity of 5 × 1013 Jones can be achieved through applying back gate voltage. The direct growth of such 1D/2D heterostructures may pave the way toward high performance integrated optoelectronics and systems.

Rational Kinetics Control toward Universal Growth of 2D Vertically Stacked Heterostructures.

The rational control of the nucleation and growth kinetics to enable the growth of 2D vertical heterostructure remains a great challenge. Here, an in-depth study is provided toward understanding the growth mechanism of transition metal dichalcogenides (TMDCs) vertical heterostructures in terms of the nucleation and kinetics, where active clusters with a high diffusion barrier will induce the nucleation on top of the TMDC templates to realize vertical heterostructures. Based on this mechanism, in the experiment, through rational control of the metal/chalcogenide ratio in the vapor precursors, effective manipulation of the diffusion barrier of the active clusters and precise control of the heteroepitaxy direction are realized. In this way, a family of vertical TMDCs heterostructures is successfully designed. Optical studies and scanning transmission electron microscopy investigations exhibit that the resulting heterostructures possess atomic sharp interfaces without apparent alloying and defects. This study provides a deep understanding regarding the growth mechanism in terms of the nucleation and kinetics and the robust growth of 2D vertical heterostructures, defining a versatile material platform for fundamental studies and potential device applications.

Polar-Induced Selective Epitaxial Growth of Multijunction Nanoribbons for High-Performance Optoelectronics.

Semiconductor heterostructures are basic building blocks for modern electronics and optoelectronics. However, it still remains a great challenge to combine different semiconductor materials in single nanostructures with tailored geometry and chemical composition. Here, a polar-induced selective epitaxial growth method is reported to alternately grow CdS and CdS xSe1- x heterostructure nanoribbons (NRs) side by side in the lateral direction, with the heterointerface (junction) number to be well controlled. Transmission electron microscopy (TEM) and spatial-resolved µ-PL spectra are employed to characterize the heterostructure NRs, which indicate that the achieved NRs are high-quality heterostructures with sharp interfaces. Kelvin probe force microscopy (KPFM) and femtosecond pump-probe characterizations further confirm the efficient charge-transfer process across the interfaces in the multijunction NRs. Photodetectors based on the achieved NRs are realized and systematically investigated, demonstrating junction number-dependent optoelectronic response behaviors. NRs with more junctions exhibit more superior device performances, reflecting the important roles of the high-quality interface regions. Based on this multijunction NRs device, high on-off ratio (107) and remarkable responsivity (1.5 × 105 A/W) are demonstrated, both of which represent the best results compared to the reported CdS, CdSe, and their heterostructures. These novel multijunction NRs may find broad applications in future integrated photonics and optoelectronics devices and systems.

Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors.

2D vertical van der Waals (vdW) heterostructures with atomically sharp interfaces have attracted tremendous interest in 2D photonic and optoelectronic applications. Band alignment engineering in 2D heterostructures provides a perfect platform for tailoring interfacial charge transfer behaviors, from which desired optical and optoelectronic features can be realized. Here, by developing a two-step chemical vapor deposition strategy, direct vapor growth of monolayer PbI2 on monolayer transition metal dichalcogenides (TMDCs) (WS2, WSe2, or alloying WS2(1- x )Se2 x ), forming bilayer vertical heterostructures, is demonstrated. Based on the calculated electron band structures, the interfacial band alignments of the obtained heterostructures can be gradually tuned from type-I (PbI2/WS2) to type-II (PbI2/WSe2). Steady-state photoluminescence (PL) and time-resolved PL measurements reveal that the PL emissions from the bottom TMDC layers can be modulated from apparently enhanced (for WS2) to greatly quenched (for WSe2) compared to their monolayer counterparts, which can be attributed to the band alignment-induced distinct interfacial charge transfer behaviors. The band alignment nature of the heterostructures is further demonstrated by the PL excitation spectroscopy and interlayer exciton investigation. The realization of 2D vertical heterostructures with tunable band alignments will provide a new material platform for designing and constructing multifunctional optoelectronic devices.

Band Alignment Engineering in Two-Dimensional Lateral Heterostructures.

Two-dimensional (2D) heterostructures have aroused widespread attentions due to the fascinating properties originating from the interfaces and the derived potential applications in modern electronics and optoelectronics. The interfacial band alignment engineering of 2D heterostructures would open up promising routes toward the flexible design and optimization of the electronic and optoelectronic properties. Herein, we report a one-step chemical vapor deposition method for the growth of band alignment continuously modulated WS2-WS2(1- x)Se2 x (0 < x ≤ 1) monolayer lateral heterostructures, with atomically sharp interfaces at the junction area. Local photoluminescence (PL) and Raman measurements demonstrate the position-dependent composition and band gap information on the as-grown nanosheets. Kelvin probe force microscopy (KPFM) investigations further confirm the tunable band alignments in the heterostructures, where a continuously decreased Fermi level difference between the core and the shell regions is observed with the x value varied from 1 to 0. The direct growth of high-quality atomic-level junctions with controllable band alignment marks an important step toward the potential applications of 2D semiconductors in integrated electronic and optoelectronic devices.

High-Quality In-Plane Aligned CsPbX3 Perovskite Nanowire Lasers with Composition-Dependent Strong Exciton-Photon Coupling.

Cesium lead halide perovskite nanowires have emerged as promising low-dimensional semiconductor structures for integrated photonic applications. Understanding light-matter interactions in a nanowire cavity is of both fundamental and practical interest in designing low-power-consumption nanoscale light sources. In this work, high-quality in-plane aligned halide perovskite CsPbX3 (X = Cl, Br, I) nanowires are synthesized by a vapor growth method on an annealed M-plane sapphire substrate. Large-area nanowire laser arrays have been achieved based on the as-grown aligned CsPbX3 nanowires at room temperature with quite low pumping thresholds, very high quality factors, and a high degree of linear polarization. More importantly, it is found that exciton-polaritons are formed in the nanowires under the excitation of a pulsed laser, indicating a strong exciton-photon coupling in the optical microcavities made of cesium lead halide perovskites. The coupling strength in these CsPbX3 nanowires is dependent on the atomic composition, where the obtained room-temperature Rabi splitting energy is ∼210 ± 13, 146 ± 9, and 103 ± 5 meV for the CsPbCl3, CsPbBr3, and CsPbI3 nanowires, respectively. This work provides fundamental insights for the practical applications of all-inorganic perovskite CsPbX3 nanowires in designing light-emitting devices and integrated nanophotonic systems.

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p-n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10-14 A and a highest on-off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 µs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

Directional Growth of Ultralong CsPbBr3 Perovskite Nanowires for High-Performance Photodetectors.

Directional growth of ultralong nanowires (NWs) is significant for practical application of large-scale optoelectronic integration. Here, we demonstrate the controlled growth of in-plane directional perovskite CsPbBr3 NWs, induced by graphoepitaxial effect on annealed M-plane sapphire substrates. The wires have a diameter of several hundred nanometers, with lengths up to several millimeters. Microstructure characterization shows that CsPbBr3 NWs are high-quality single crystals, with smooth surfaces and well-defined cross section. The NWs have very strong band-edge photoluminescence (PL) with a long PL lifetime of ∼25 ns and can realize high-quality optical waveguides. Photodetectors constructed on these individual NWs exhibit excellent photoresponse with an ultrahigh responsivity of 4400 A/W and a very fast response speed of 252 µs. This work presents an important step toward scalable growth of high-quality perovskite NWs, which will provide promising opportunities in constructing integrated nanophotonic and optoelectronic systems.

Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets.

Quasi-one-dimensional (1D) nanostructures have been extensively explored for electronic and optoelectronic devices on account of their unique morphologies and versatile physical properties. Here, we report the successful synthesis of GaInAsSb alloy nanosheets by a simple chemical vapor deposition method. The grown GaInAsSb alloy nanosheets are pure zinc-blende single crystals, which show nanosize-induced extraordinary optoelectronic properties as compared with bulk materials. µ-Raman spectra exhibit a multi-mode phonon vibration behavior with clear frequency shifts under varied laser power. Photoluminescence measurements reveal a strong light emission in the near-infrared region (1985 nm), and the obtained Varshni thermal coefficients α and ß are smaller than those of the bulk counterparts due to the size confinement effect. In addition, photodetectors (PDs) based on these single-alloy nanosheets were constructed for the first time. The PDs show a strong response in the near-infrared region with the external quantum efficiency of 8.05 × 104%, and the responsivity of 0.675 × 103 A W-1. These novel nanostructures would make contributions to the study of fundamental physical phenomena in quasi-1D nanomaterial systems and can be potential building blocks for optoelectronic and quantum devices.