Broad-Temperature Thermoelectric Figure of Merit Enhancement in Unconventional n-Type Bi2Te2.3Se0.7 Alloys.

Bi2Te2.7Se0.3-based alloys are conventional n-type thermoelectric materials for solid-state cooling and heat harvest near room temperature; high thermoelectric performance over a wide temperature range and superior mechanical properties are essential for their use in practical thermoelectric devices. In this work, we demonstrated that decent thermoelectric performance can also be realized in an unconventional composite with a nominal composition of Bi2Te2.3Se0.7 since the emergence of a Bi2Te2Se phase with Se ordered occupation could induce an enlargement of the electronic band gap. Follow-up Cu/Na codoping could generate a dynamic optimization of carrier concentration, significantly broadening the temperature range of high thermoelectric performance. Further B incorporation and annealing treatment resulted in obvious grain refinement and stacking fault structures, which help pushing the ultimate maximal figure of merit up to ∼1.3 at 423 K with an average value of ∼1.2 at 300-573 K. This work might provide insights for further research on bismuth tellurides and other thermoelectric materials.

Thermoelectric Cooling-Oriented Large Power Factor Realized in N-Type Bi2Te3 Via Deformation Potential Modulation and Giant Deformation.

Thermoelectric refrigeration, utilizing Peltier effect, has great potential in all-solid-state active cooling field near room temperature. The performance of a thermoelectric cooling device is highly determined by the power factor of consisting materials besides the figure of merit. In this work, it is demonstrated that successive addition of Cu and Nd can realize non-trivial modulation of deformation potential in n-type room temperature thermoelectric material Bi2Te2.7Se0.3 and result in a significant increment of electron mobility and remarkably enhanced power factor. Following giant hot deformation process improves grain texturing and strengthens inter-layer interaction in Bi2Te2.7Se0.3 lattice, further pushing the power factor to ≈47 µW cm-1 K-2 at 300 K and maximal figure of merit ZTmax to ≈1.34 at 423 K with average ZTave of ≈1.27 at 300-473 K. Moreover, robust compressive strength is enhanced to ≈146.6 MPa. The corresponding finite element simulations demonstrate large temperature differences ΔT of ≈70 K and a maximal coefficient of performance COP ≈ 10.6 (hot end temperature at 300 K), which can be achieved in a ten-pair thermoelectric cooling virtual module. The strategies and results as shown in this work can further advance the application of n-type Bi2Te3 for thermoelectric cooling.

Enhanced photovoltaic performance of silicon solar cells using a down-shift KCa2Mg2(VO4)3 phosphor.

The efficiency of silicon solar cells is still lower than theoretical values, partly due to their inability to utilize the ultraviolet and infrared portions of the solar spectrum. Herein, a novel method using a KCa2Mg2(VO4)3 phosphor with a down-shift effect to improve the photovoltaic performance of silicon solar cells and enhance the utilization of UV light in standard p-type silicon solar cells is proposed. The synthesized phosphors were mixed with an ethylene vinyl acetate (EVA) copolymer and pressed into a film, which was subsequently encapsulated in monocrystalline silicon solar cells. The results show that the addition of this film notably enhanced the photovoltaic performance of the silicon solar cells; the current density was increased by 2.89% (from 33.20 to 34.16 mA cm-2), and the photovoltaic conversion efficiency was improved by 5.69% (from 15.11% to 15.97%) at the optimal concentration compared to bare cells.

Interlamellar-Spacing Engineering of Stable and Toxicity-Reduced 2D Perovskite Single Crystal for High-Resolution X-ray Imaging.

Two-dimensional (2D) lead halide perovskites are excellent candidates for X-ray detection due to their high resistivity, high ion migration barrier, and large X-ray absorption coefficients. However, the high toxicity and long interlamellar distance of the 2D perovskites limit their wide application in high sensitivity X-ray detection. Herein, we demonstrate stable and toxicity-reduced 2D perovskite single crystals (SCs) realized by interlamellar-spacing engineering via a distortion self-balancing strategy. The engineered low-toxicity 2D SC detectors achieve high stability, large mobility-lifetime product, and therefore high-performance X-ray detection. Specifically, the detectors exhibit a record high sensitivity of 13488 µC Gy1- cm-2, a low detection limit of 8.23 nGy s-1, as well as a high spatial resolution of 8.56 lp mm-1 in X-ray imaging, all of which are far better than those of the high-toxicity 2D lead-based perovskite detectors. These advances provide a new technical solution for the low-cost fabrication of low-toxicity, scalable X-ray detectors.

Realizing Outstanding Energy Storage Performance in KBT-Based Lead-Free Ceramics via Suppressing Space Charge Accumulation.

The great potential of K1/2Bi1/2TiO3 (KBT) for dielectric energy storage ceramics is impeded by its low dielectric breakdown strength, thereby limiting its utilization of high polarization. This study develops a novel composition, 0.83KBT-0.095Na1/2Bi1/2ZrO3-0.075 Bi0.85Nd0.15FeO3 (KNBNTF) ceramics, demonstrating outstanding energy storage performance under high electric fields up to 425 kV cm-1: a remarkable recoverable energy density of 7.03 J cm-3, and a high efficiency of 86.0%. The analysis reveals that the superior dielectric breakdown resistance arises from effective mitigation of space charge accumulation at the interface, influenced by differential dielectric and conductance behaviors between grains and grain boundaries. Electric impedance spectra confirm the significant suppression of space charge accumulation in KNBNTF, attributable to the co-introduction of Na1/2Bi1/2ZrO3 and Bi0.85Nd0.15FeO3. Phase-field simulations reveal the emergence of a trans-granular breakdown mode in KNBNTF resulting from the mitigated interfacial polarization, impeding breakdown propagation and increasing dielectric breakdown resistance. Furthermore, KNBNTF exhibits a complex local polarization and enhances the relaxor features, facilitating high field-induced polarization and establishing favorable conditions for exceptional energy storage performance. Therefore, the proposed strategy is a promising design pathway for tailoring dielectric ceramics in energy storage applications.

Giant dielectric response and relaxation behavior of Bi3+/W6+ co-doped TiO2 ceramics.

With the rapid development of electronic information technology, dielectric ceramics are widely used in the field of passive devices such as multi-layer ceramic capacitors. In this paper, (Bi2/3W1/3)xTi1-xO2 (BWTOx) ceramics with superior dielectric properties have been prepared by using a traditional solid-state method. Remarkably, at a (Bi2/3W1/3)4+ doping level of 0.01, a (Bi2/3W1/3)0.01Ti0.99O2 ceramic achieved a giant dielectric permittivity of ∼1.5 × 104 and a low loss tangent of ∼0.07 at 1 kHz, as well as a good temperature independence, which could satisfy the operating temperature standards for X9R capacitors. The abnormal dielectric relaxation in the low temperature region can be explained by the interface polarization. Data based on the complex impedance spectroscopy and X-ray photoemission spectroscopy results indicate that the colossal permittivity of BWTOx ceramics is mainly ascribed to the internal barrier layer capacitance effect. The findings of this work could provide valuable insights for achieving large dielectric constants and good temperature stability simultaneously in BWTOx and other related electronic ceramic materials.

Giant Deformation Induced Staggered-Layer Structure Promoting the Thermoelectric and Mechanical Performance in n-Type Bi2(Te, Se)3.

Bismuth telluride has long been recognized as the most promising near-room temperature thermoelectric material for commercial application; however, the thermoelectric performance for n-type Bi2(Te, Se)3-based alloys is far lagging behind that of its p-type counterpart. In this work, a giant hot deformation (GD) process is implemented in an optimized Bi2Te2.694Se0.3I0.006+3 wt%K2Bi8Se13 precursor and generates a unique staggered-layer structure. The staggered-layered structure, which is only observed in severely deformed crystals, exhibits a preferential scattering on heat-carrying phonons rather than charge-carrying electrons, thus resulting in an ultralow lattice thermal conductivity while retaining high-weight carrier mobility. Moreover, the staggered-layer structure is located adjacent to the van der Waals gap in Bi2(Te, Se)3 lattice and is able to strengthen the interaction between anion layers across the gap, leading to obviously improved compressive strength and Vickers hardness. Consequently, a high peak figure of merit ZT of ≈ 1.3 at 423 K, and an average ZT of ≈ 1.2 at 300-473 K can be achieved in GD sample. This study demonstrates that the GD process can successfully decouple the electrical and thermal transports with simultaneously enhanced mechanic performance.

Zeolite-like Topology Oxonitridosilicate La3.6Ba1.7Si5N10O2.1 with Potential Applications in Nonlinear Optical Materials.

A novel zeolite-like topology oxonitridosilicate La3.6Ba1.7Si5N10O2.1 with the space group Amm2 (no. 38) and lattice parameters a = 9.5193 (3) Å, b = 16.7011 (5) Å, c = 26.0279 (8) Å, and Z = 12 has been synthesized by a high-temperature solid-state reaction. The crystal structure of La3.6Ba1.7Si5N10O2.1 has four different kinds of tiling, and the cages in the structure are filled with La, Ba, and O atoms. The presence of a noncentrosymmetric space group further suggests its potential for nonlinear optical (NLO) applications, and La3.6Ba1.7Si5N10O2.1 demonstrated a stronger second-harmonic generation (SHG) response than that of SiO2.

BaLa5V2O3N7: a novel anti-perovskite oxynitride for electrode applications.

The exploration of transition metal oxynitrides has garnered significant interest due to their intriguing property diversity. Herein, we present a promising new transition metal oxynitride BaLa5V2O3N7, which features an anti-perovskite structure type. This unique structural configuration endows the material with remarkable conductivity, particularly at low temperatures, paving the way for the material to be used in a wide range of technological applications.

Superior Energy Storage Properties and Optical Transparency in K0.5 Na0.5 NbO3 -Based Dielectric Ceramics via Multiple Synergistic Strategies.

Eco-friendly transparent dielectric ceramics with superior energy storage properties are highly desirable in various transparent energy-storage electronic devices, ranging from advanced transparent pulse capacitors to electro-optical multifunctional devices. However, the collaborative improvement of energy storage properties and optical transparency in KNN-based ceramics still remains challenging. To address this issue, multiple synergistic strategies are proposed, such as refining the grain size, introducing polar nanoregions, and inducing a high-symmetry phase structure. Accordingly, outstanding energy storage density (Wtotal  ≈7.5 J cm-3 , Wrec  ≈5.3 J cm-3 ) and optical transmittance (≈76% at 1600 nm, ≈62% at 780 nm) are simultaneously realized in the 0.94(K0.5 Na0.5 )NbO3 -0.06Sr0.7 La0.2 ZrO3 ceramic, together with satisfactory charge-discharge performances (discharge energy density: ≈2.7 J cm-3 , power density: ≈243 MW cm-3 , discharge rate: ≈76 ns), surpassing previously reported KNN-based transparent ceramics. Piezoresponse force microscopy and transmission electron microscopy revealed that this excellent performance can be attributed to the nanoscale domain and submicron-scale grain size. The significant improvement in the optical transparency and energy storage properties of the materials resulted in the widening of the application prospects of the materials.

Enhancing Energy Storage Performance in Lead-Free Bismuth Sodium Niobate-Based Tungsten Bronze Ceramics through Relaxor Tuning.

A series of tungsten bronze Sr2Na0.85Bi0.05Nb5-xTaxO15 (SBNN-xTa) ferroelectric ceramics were designed and synthesized by the traditional solid-phase reaction method. The B-site engineering strategy was utilized to induce structural distortion, order-disorder distribution, and polarization modulation to enhance relaxor behavior. Through investigating the impact of B-site Ta replacement on the structure, relaxor behavior, and energy storage performance, this study has shed light on the two main factors for relaxor nature: (1) with the increase of Ta substitution, the tungsten bronze crystal distortion and expansion induced the structural change from an orthorhombic Im2a phase to Bbm2 phase at room temperature; (2) the transition from ferroelectric to relaxor behavior could be attributed to the coordinate incommensurate local superstructural modulations and the generation of nanodomain structure regions. Moreover, we benefited from the effective decrease of ceramic grains and inhibition of abnormal growth. Finally, we obtained an effective energy storage density (Wrec) ∼ 1.6 J/cm3, an efficiency (η) ∼ 80%, a current density (CD) ∼ 1384.2 A/cm2, and a power density (PD) ∼ 138.4 MW/cm3.

The origin of dielectric relaxation behavior in TiO2 based ceramics co-doped with Zn2+, W6+ ions under a N2/O2 sintering atmosphere.

Dense (Zn0.5W0.5)xTi1-xO2 (ZWTOx) ceramics were fabricated using a conventional solid state reaction method with sintering under a nitrogen atmosphere (ZWTOx-N2) and an oxygen atmosphere (ZWTOx-O2), respectively. Colossal permittivity (ε > 104) and low loss (tan δ < 0.1) were simultaneously achieved in ZWTOx-N2 ceramics, and two types of dielectric relaxation behaviors observed were interpreted to be due to interface polarization and disassociation between oxygen vacancies and trivalent titanium ions, respectively. The impedance plots suggested that the ZWTOx-N2 ceramics are electrical heterostructures composed of semiconductor and insulator grain boundaries, which proved that the CP performance of ZWTOx-N2 ceramics almost originates from the internal barrier layer capacitance (IBLC) effect. In addition, a series of anomalous dielectric behaviors such as low permittivity and low frequency dispersion were observed for ZWTOx-O2 ceramics; polarization (P)-electric field (E) hysteresis loop curves were obtained for ZWTOx-O2 ceramics, and that impedance plots have shown that the ZWTOx-O2 ceramics display higher insulation resistivity. Density functional theory (DFT) calculations illustrated that the Zn2+-W6+ ion pairs are easy to form in ZWTOx-O2 ceramics, which causes destruction of the local lattice and thus leads to abnormal dielectric behavior. This work will provide a new strategy for defect engineering in TiO2 and other CP materials.

All Cubic-Phase δ-TAGS Thermoelectrics Over the Entire Mid-Temperature Range.

GeTe-based pseudo-binary (GeTe)x (AgSbTe2 )100- x (TAGS-x) is recognized as a promising p-type mid-temperature thermoelectric material with outstanding thermoelectric performance; nevertheless, its intrinsic structural transition and metastable microstructure (due to Ag/Sb/Ge localization) restrict the long-time application of TAGS-x in practical thermoelectric devices. In this work, a series of non-stoichiometric (GeTe)x (Ag1- δ Sb1+ δ Te2+ δ )100- x (x = 85∼50; δ = ≈0.20-0.23), referred to as δ-TAGS-x, with all cubic phase over the entire testing temperature range (300-773 K), is synthesized. Through optimization of crystal symmetry and microstructure, a state-of-the-art ZTmax of 1.86 at 673 K and average ZTavg of 1.43 at ≈323-773 K are realized in δ-TAGS-75 (δ = 0.21), which is the highest value among all reported cubic-phase GeTe-based thermoelectric systems so far. As compared with stoichiometric TAGS-x, the remarkable thermoelectric achieved in cubic δ-TAGS-x can be attributed to the alleviation of highly (electrical and thermal) resistive grain boundary Ag8 GeTe6 phase. Moreover, δ-TAGS-x exhibits much better mechanical properties than stoichiometric TAGS-x, together with the outstanding thermoelectric performance, leading to a robust single-leg thermoelectric module with ηmax of ≈10.2% and Pmax of ≈0.191 W. The finding in this work indicates the great application potential of non-stoichiometric δ-TAGS-x in the field of mid-temperature waste heat harvesting.

Significantly Enhanced Thermoelectric Performance Achieved in CuGaTe2 through Dual-Element Permutations at Cation Sites.

CuGaTe2 has become a widely studied mid-temperature thermoelectric material due to the advantages of large element abundance, proper band gap, and intrinsically high Seebeck coefficient. However, the intrinsically high lattice thermal conductivity and low room-temperature electrical conductivity result in a merely moderate thermoelectric performance for pristine CuGaTe2. In this work, we found that Cu deficiency can significantly reduce the activation energy Ea of Cu vacancies from ∼0.17 eV for pristine CuGaTe2 to nearly zero for Cu0.97GaTe2, thus leading to dramatic improvements in hole concentration and power factor. More remarkably, element permutations (Ag/Cu and In/Ga) at both cation sites can effectively reduce the lattice thermal conductivity at the entire testing temperatures by producing intensive atomic-scale mass and strain fluctuations. Eventually, an ultrahigh peak ZTmax value of ∼1.5 at 873 K is achieved in the composition of Cu0.72Ag0.25Ga0.6In0.4Te2, while a large average ZTavg value of ∼0.7 (323-873 K) is obtained in the Cu0.67Ag0.3Ga0.6In0.4Te2 sample, both of which are significant improvements over pristine CuGaTe2.

Synthesis and luminescence properties of new nitridolithosilicate phosphor La4Ba3Li3Si9N19:Pr3+ grown in Li flux.

Flux synthesis is an effective method to discover large crystals of new compounds. In this paper, a solid-state reaction in Li flux produced a new nitridolithosilicate La4Ba3Li3Si9N19 in the orthorhombic space group Cmcm (No. 63) with lattice parameters of a = 9.7263(1), b = 18.2746(2), c = 11.2929(1) Å, and Z = 4. The La4Ba3Li3Si9N19 exhibits a 3-D framework based on triangular clusters (3-rings) formed by vertex-sharing SiN4 tetrahedra. The rare earth Pr3+-doped La4Ba3Li3Si9N19 emits a narrow-band red emission peaking at approximately 640 nm with a full width at half-maximum of 50 nm when excited under ultraviolet light.

Strained Endotaxial PbS Nanoprecipitates Boosting Ultrahigh Thermoelectric Quality Factor in n-Type PbTe As-Cast Ingots.

Lead telluride (PbTe) has long been regarded as an excellent thermoelectric material at intermediate temperature range (573-873 K); however, n-type PbTe's performance is always relatively inferior to its p-type counterpart mainly due to their different electronic band structures. In this work, an ultrahigh thermoelectric quality factor (µ/κL  ≈ 1.36 × 105 cm3 KJ-1 V-1 ) is reported in extra 0.3% Cu doped n-type (PbTe)0.9 (PbS)0.1 as-cast ingots. Transmission electron microscopy (TEM) characterization reveals that excess PbS exists in PbTe matrix as strained endotaxial nanoprecipitates, which affect electrical and thermal conduction discriminately: (1) coherent PbTe/PbS lattice minimizes the interface scattering of charge carriers; (2) periodic strain centers at PbTe/PbS interface exhibit intensive strain contrast, which can strongly scatter heat-carrying phonons. Electron backscattered diffraction (EBSD) characterization illustrates very large PbTe grains (≈1 mm) in these as-cast ingots, ensuring an extremely low grain boundary scattering rate thus a very high charge carrier mobility. Eventually, a remarkably high ZTmax  ≈ 1.5 at 773 K and an outstanding ZTavg  ≈ 1.0 between 323 and 773 K are simultaneously achieved in the (PbTe)0.9 (PbS)0.1  +0.3%Cu sample; these values are highly competitive with reported state-of-art n-type PbTe materials.

Narrow-band red emitting oxonitridosilicate phosphor La4-xSr2+xSi5N12-xOx:Pr3+ (x≈ 1.69).

The new oxonitridosilicates Ln4-xSr2+xSi5N12-xOx (Ln = La, Ce) were synthesized by high temperature solid-state reactions. The crystal structures were solved and refined from both single-crystal and powder X-ray diffraction data. These oxonitridosilicate compounds crystallize in the monoclinic space group P21/n (no. 14) and exhibit a double-layer structure made up of corner-sharing Si(O/N)4 tetrahedra. When excited with near-UV and blue light, the Pr3+ doped La2.31Sr3.69Si5N10.31O1.69 phosphor shows a narrow-band red emission peaking at 625 nm with a full width at half-maximum of 40 nm.

Metal-Free Halide Perovskite Single Crystals with Very Long Charge Lifetimes for Efficient X-ray Imaging.

Metal-free halide perovskites, as a specific category of the perovskite family, have recently emerged as novel semiconductors for organic ferroelectrics and promise the wide chemical diversity of the ABX3 perovskite structure with mechanical flexibility, light weight, and eco-friendly processing. However, after the initial discovery 17 years ago, there has been no experimental information about their charge transport properties and only one brief mention of their optoelectronic properties. Here, growth of large single crystals of metal-free halide perovskite DABCO-NH4 Br3 (DABCO = N-N'-diazabicyclo[2.2.2]octonium) is reported together with characterization of their instrinsic optical and electronic properties and demonstration, of metal-free halide perovskite optoelectronics. The results reveal that the crystals have an unusually large semigap of ≈16 eV and a specific band nature with the valence band maximum and the conduction band minimum mainly dominated by the halide and DABCO2+ , respectively. The unusually large semigap rationalizes extremely long lifetimes approaching the millisecond regime, leading to very high charge diffusion lengths (tens of µm). The crystals also exhibit high X-ray attenuation as well as being lightweight. All these properties translate to high-performance X-ray imaging with sensitivity up to 173 µC Gyair -1 cm-2 . This makes metal-free perovskites novel candidates for the next generation of optoelectronics.

Multi-inch single-crystalline perovskite membrane for high-detectivity flexible photosensors.

Single crystalline perovskites exhibit high optical absorption, long carrier lifetime, large carrier mobility, low trap-state-density and high defect tolerance. Unfortunately, all single crystalline perovskites attained so far are limited to bulk single crystals and small area wafers. As such, it is impossible to design highly demanded flexible single-crystalline electronics and wearable devices including displays, touch sensing devices, transistors, etc. Herein we report a method of induced peripheral crystallization to prepare large area flexible single-crystalline membrane (SCM) of phenylethylamine lead iodide (C6H5C2H4NH3)2PbI4 with area exceeding 2500 mm2 and thinness as little as 0.6 µm. The ultrathin flexible SCM exhibits ultralow defect density, superior uniformity and long-term stability. Using the superior ultrathin membrane, a series of flexible photosensors were designed and fabricated to exhibit very high external quantum efficiency of 26530%, responsivity of 98.17 A W-1 and detectivity as much as 1.62 × 1015 cm Hz1/2 W-1 (Jones).

Narrow-band blue emitting nitridomagnesosilicate phosphor Sr8Mg7Si9N22:Eu2+ for phosphor-converted LEDs.

We report a novel narrow-band blue emitting phosphor Sr7.92Mg7Si9N22:0.08Eu2+. The crystal structure of Sr8Mg7Si9N22 is composed of corner-sharing and edge-sharing [SiN4] tetrahedra and distorted square-pyramid [MgN5] polyhedra. Under 350 nm excitation, Eu2+ doped Sr8Mg7Si9N22 emits narrow-band blue light with maximum intensity at 450 nm and a fwhm of 38 nm.