High-Voltage Pulse-Assisted Operation of Single-Layer Electrochromic Systems for High Performance and Reliability.

A single-layer electrochromic device (SL-ECD) based on ionic conductors containing EC chromophores provides a very simple platform that can be readily fabricated by sandwiching the EC layer between two electrodes. The operation of SL-ECDs is governed by the diffusion of redox species due to their SL structure, which causes a relatively slow dynamic response. In this study, we propose an effective high-voltage pulse injection strategy to improve the performance of SL-ECDs. Applying a programmed voltage wave composed of DC and high-voltage pulses promotes coloration/bleaching switching without degrading device stability, which is more advantageous than applying high DC voltages. We modified the input voltage profile by considering fundamental parameters, such as the amplitude and duty ratio of additional voltage pulses. The coloration and bleaching dynamic responses with the optimized voltage wave are ∼62 and ∼20% faster, respectively, compared with those with the simple DC input. Furthermore, the additionally injected pulse aids in increasing the coloration efficiency from ∼95.3 to ∼168.6 cm2 C-1. Another notable feature of this system is that the device operates stably when a programmed voltage wave is used. These results indicate that the concept of high-voltage pulse-assisted operation of SL-ECDs is a straightforward but effective method for improving device performance without changing the EC chromophore or device structure.

Reliable, High-Performance Electrochromic Supercapacitors Based on Metal-Doped Nickel Oxide.

Herein, high-performance, reliable electrochromic supercapacitors (ECSs) are proposed based on tungsten trioxide (WO3) and nickel oxide (NiO) films. To maximize device performance and stability, the stoichiometric balance between anode and cathode materials is controlled by carefully adjusting the thickness of the anodic NiO film while fixing the thickness of WO3 to ∼660 nm. Then, a small amount (≤10 mol %) of metal (e.g., copper) is doped into the NiO film, improving the electrical conductivity and electrochemical activity. At a Cu doping level of 7 mol %, the resulting ECS exhibited the highest performance, including a high areal capacitance (∼14.9 mF/cm2), excellent coulombic efficiency (∼99%), wide operating temperature range (0-80 °C), reliable operation with high charging/discharging cyclic stability (>10,000 cycles), and good self-discharging durability. Simultaneously, the change in transmittance of the device is well synchronized with the galvanostatic charging/discharging curve by which the real-time energy storage status is visually indicated. Furthermore, the practical feasibility of the device is successfully demonstrated. These results imply that the ECS fabricated in this work is a promising potential energy storage platform and an attractive component for future electronics.