Effect of Lenalidomide Maintenance in Chronic Lymphocytic Leukemia: A Meta-Analysis and Trial-Sequential Analysis.

Chronic lymphocytic leukemia (CLL) is the most common lymphoproliferative disease in adults. Despite durable responses and sustained remission rates to frontline therapy, CLL is still incurable within standard therapy and eventually relapses. Maintenance therapies aim to achieve deep remission. However, the efficacy and safety of lenalidomide maintenance are still debated. Randomized controlled trials published before March 2022 were retrieved from databases. Primary outcomes were progression-free survival (PFS) and overall survival (OS). Trial sequential analysis examined analytical power in primary outcomes. Secondary outcomes were Grade 3-4 neutropenia, treatment discontinuation (TD), serious adverse events (SAE), and fatal adverse events (FAE). Hazard (HR) and odds ratios (ORs) with 95% confidence intervals (CIs) were calculated. Four articles (733 patients) met the selection criteria. Lenalidomide maintenance was associated with a statistically significant effect in prolonging PFS (HR, 0.43; 95% CI, 0.28-0.68; I2 = 57%) and higher proportion of SAE (OR 4.64; 95% CI 2.96-7.26; I2 = 0%) and exhibited no difference in OS (HR, 0.62; 95% CI, 0.29-1.30; I2 = 52%) observation/placebo. It showed no significant difference compared with observation/placebo regarding Grade 3-4 neutropenia (OR 2.30; 95% CI 0.84-6.28; I2 = 81%), TD (OR 0.76; 95% CI 0.29-1.99; I2 = 84%), and FAE (OR 0.86; 95% CI 0.28-2.63; I2 = 0%). Lenalidomide maintenance can prolong PFS in CLL. Further studies should verify its effect on OS.

Role ofin-situhydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors.

This work investigates the effect of anin situhydrogen plasma treatment on gate bias stability and performance of amorphous InGaZnO thin-film transistors (TFTs) deposited by using atmospheric-pressure PECVD. The H2plasma-treateda-IGZO channel has shown significant improvement in bias stress induced instability with a minuscule threshold voltage shift (ΔVth) of 0.31 and -0.17 V under positive gate bias stress (PBS) and negative gate bias stress (NBS), respectively. With the aid of the energy band diagram, the proposed work demonstrates the formation of negative species O2-and positive species H2O+in the backchannel under PBS and NBS in addition to ionized oxygen vacancy (Vo) defects ata-IGZO/ZrO2interfaces are the reason for gate bias instability which could be effectively suppressed within situH2plasma treatment. From the experimental result, it is observed that the electrical performance such as field-effect mobility (µFE), on-off current ratio (Ion/Ioff), and subthreshold swing improved significantly byin situH2plasma treatment with passivation of interface trap density and bulk trap defects.

Prolonged Remission by Pembrolizumab and Brentuximab-Vedotin Combination Therapy in Heavily-Pretreated Relapsed/Refractory Hodgkin's Lymphoma.

Hodgkin's lymphoma (HL) is usually sensitive and curative to multi-agent chemotherapy, but may become refractory disease in a subset of relapsed patients. Recent novel agents, brentuximab-vedotin (BV) and immune checkpoint inhibitors have significantly improve the treatment outcome. We report the outcome by combination of BV with pembrolizumab in a patient with a relapsed/refractory HL in a remarkable and durable response, even previously failed to multiple lines of chemotherapy, or brentuximab-vedotin/pembrolizumab monotherapy. Further investigation of immunotherapy combination in relapsed/refractory HL is needed.

Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment.

Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm²/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780-1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497-1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114-5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (µFE) 19.7 cm²/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.