High-Performance Semi-Transparent Perovskite Solar Cells with over 22% Visible Transparency: Pushing the Limit through MXene Interface Engineering.

Semi-transparent perovskite solar cells (ST-PSCs) have attracted enormous attention recently due to their potential in building-integrated photovoltaic. To obtain adequate average visible transmittance (AVT), a thin perovskite is commonly employed in ST-PSCs. While the thinner perovskite layer has higher transparency, its light absorption efficiency is reduced, and the device shows lower power conversion efficiency (PCE). In this work, a combination of high-quality transparent conducting layers and surface engineering using 2D-MXene results in a superior PCE. In situ high-temperature X-ray diffraction provides direct evidence that the MXene interlayer retards the perovskite crystallization process and leads to larger perovskite grains with fewer grain boundaries, which are favorable for carrier transport. The interfacial carrier recombination is decreased due to fewer defects in the perovskite. Consequently, the current density of the devices with MXene increased significantly. Also, optimized indium tin oxide provides appreciable transparency and conductivity as the top electrode. The semi-transparent device with a PCE of 14.78% and AVT of over 26.7% (400-800 nm) was successfully obtained, outperforming most reported ST-PSCs. The unencapsulated device maintained 85.58% of its original efficiency after over 1000 h under ambient conditions. This work provides a new strategy to prepare high-efficiency ST-PSCs with remarkable AVT and extended stability.

Controllable Solution-Phase Epitaxial Growth of Q1D Sb2 (S,Se)3 /CdS Heterojunction Solar Cell with 9.2% Efficiency.

Antimony sulfoselenide (Sb2 (S,Se)3 ) is a promising photoabsorber for stable and high efficiency thin film photovoltaics (PV). The unique quasi-1D (Q1D) crystal structure gives Sb2 (S,Se)3 intriguing anisotropic optoelectronic properties, which intrinsically require the optimization of crystal growth orientation, especially for electronic devices with vertical charge transport such as solar cells. Although the efficiency of Sb2 (S,Se)3 solar cells has been improved greatly through optimizing the material quality, the fundamental issue of crystal orientation control in polycrystalline films remains unsolved, resulting in charge carrier recombination losses in the device. Herein, the epitaxial growth of vertically-oriented Sb2 (S,Se)3 film on hexagonal CdS is successfully realized via a solution-based synergistic crystal growth process. The crystallographic orientation relationship between Sb2 (S,Se)3 light absorber and the CdS substrate has been rigorously investigated. The best performing Sb2 (S,Se)3 solar cell shows a high power conversion efficiency of 9.2% owing to the faster charge transport in the bulk and the efficient charge extraction across the heterojunction. This study points to a new direction to control the crystal growth of mixed-anion Sb2 (S,Se)3 , which is crucial to achieve high efficiency solar cells based on antimony chalcogenides with low dimensionality.