BOP1 contributes to the activation of autophagy in polycystic ovary syndrome via nucleolar stress response.

Abnormal autophagy is one of the vital features in polycystic ovary syndrome (PCOS). However, the underlying molecular mechanisms remain unelucidated. In this study, we aimed to investigate whether Block of Proliferation 1 (BOP1) is involved in the onset of autophagy activation of granulosa cells in PCOS. Firstly, we found that BOP1 expression was significantly down-regulated in the ovaries of PCOS mice, which was associated with the development of PCOS. Next, local injection of lentiviral vectors in the ovary for the overexpression of BOP1 significantly alleviated the phenotypes of elevated androgens, disturbed estrous cycle, and abnormal follicular development in PCOS mice. Subsequently, we found that knockdown of BOP1 activated autophagy of granulosa cells in the in vitro experiments, whereas overexpression of BOP1 inhibited autophagy in both in vivo and in vitro models. Mechanistically, BOP1 knockdown triggered the nucleolus stress response, which caused RPL11 to be released from the nucleolus into the nucleoplasm and inhibited the E3 ubiquitination ligase of MDM2, thereby enhancing the stability of p53. Subsequently, P53 inhibited mTOR, thereby activating autophagy in granulosa cells. In addition, the mRNA level of BOP1 was negatively correlated with antral follicle count (AFC), body-mass index (BMI), serum androgen levels, and anti-Mullerian hormone (AMH) in patients with PCOS. In summary, our study demonstrates that BOP1 downregulation inhibits mTOR phosphorylation through activation of the p53-dependent nucleolus stress response, which subsequently contributes to aberrant autophagy in granulosa cells, revealing that BOP1 may be a key target for probing the mechanisms of PCOS.

Manipulating Hubbard-type Coulomb blockade effect of metallic wires embedded in an insulator.

Correlated states have emerged in low-dimensional systems owing to enhanced Coulomb interactions. Elucidating these states requires atomic-scale characterization and delicate control capabilities. Herein, spectroscopic imaging-scanning tunneling microscopy was employed to investigate the correlated states residing in 1D electrons of the monolayer and bilayer MoSe2 mirror twin boundary (MTB). The Coulomb energies, determined by the wire length, drive the MTB into two types of ground states with distinct respective out-of-phase and in-phase charge orders. The two ground states can be reversibly converted through a metastable zero-energy state with in situ voltage pulses, which tune the electron filling of the MTB via a polaronic process, substantiated by first-principles calculations. Our Hubbard model calculation with an exact diagonalization method reveals the ground states as correlated insulators from an on-site U-originated Coulomb interaction, dubbed the Hubbard-type Coulomb blockade effect. Our study lays a foundation for understanding and tailoring correlated physics in complex systems.

Spin-Resolved Imaging of Antiferromagnetic Order in Fe4 Se5 Ultrathin Films on SrTiO3.

Unraveling the magnetic order in iron chalcogenides and pnictides at atomic scale is pivotal for understanding their unconventional superconducting pairing mechanism, but is experimentally challenging. Here, by utilizing spin-polarized scanning tunneling microscopy, real-space spin contrasts are successfully resolved to exhibit atomically unidirectional stripes in Fe4 Se5 ultrathin films, the plausible closely related compound of bulk FeSe with ordered Fe-vacancies, which are grown by molecular beam epitaxy. As is substantiated by the first-principles electronic structure calculations, the spin contrast originates from a pair-checkerboard antiferromagnetic ground state with in-plane magnetization, which is modulated by a spin-lattice coupling. These measurements further identify three types of nanoscale antiferromagnetic domains with distinguishable spin contrasts, which are subject to thermal fluctuations into short-ranged patches at elevated temperatures. This work provides promising opportunities in understanding the emergent magnetic order and the electronic phase diagram for FeSe-derived superconductors.

Self-Intercalated 1T-FeSe2 as an Effective Kagome Lattice.

In kagome lattice, with the emergence of Dirac cones and flat band in electronic structure, it provides a versatile ground for exploring intriguing interplay among frustrated geometry, topology and correlation. However, such engaging interest is strongly limited by available kagome materials in nature. Here we report on a synthetic strategy of constructing kagome systems via self-intercalation of Fe atoms into the van der Waals gap of FeSe2 via molecular beam epitaxy. Using low-temperature scanning tunneling microscopy, we unveil a kagome-like morphology upon intercalating a 2 × 2 ordered Fe atoms, resulting in a stoichiometry of Fe5Se8. Both the bias-dependent STM imaging and theoretical modeling calculations suggest that the kagome pattern mainly originates from slight but important reconstruction of topmost Se atoms, incurred by the nonequivalent subsurface Fe sites due to the intercalation. Our study demonstrates an alternative approach of constructing artificial kagome structures, which envisions to be tuned for exploring correlated quantum states.

Spin mapping of intralayer antiferromagnetism and field-induced spin reorientation in monolayer CrTe2.

Intrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches our understanding of two-dimensional (2D) magnetic orders and presents several advantages over ferromagnetism in spintronic applications. However, studies of 2D intrinsic antiferromagnetism are sparse, owing to the lack of net magnetisation. Here, by combining spin-polarised scanning tunnelling microscopy and first-principles calculations, we investigate the magnetism of vdW ML CrTe2, which has been successfully grown through molecular-beam epitaxy. We observe a stable antiferromagnetic (AFM) order at the atomic scale in the ML crystal, whose bulk is ferromagnetic, and correlate its imaged zigzag spin texture with the atomic lattice structure. The AFM order exhibits an intriguing noncollinear spin reorientation under magnetic fields, consistent with its calculated moderate magnetic anisotropy. The findings of this study demonstrate the intricacy of 2D vdW magnetic materials and pave the way for their in-depth analysis.

Atomic Visualization and Switching of Ferroelectric Order in ß-In2 Se3 Films at the Single Layer Limit.

2D ferroelectrics have received wide interest due to the remarkable quantum states of emerging physics at reduced dimensionality, associated with their exotic properties in high-performance and nonvolatile functional devices. Here, by combing molecular beam epitaxy synthesis and scanning tunneling microscopy characterization, two metastable phases of layered In2 Se3 films: ß'- and ß*-In2 Se3 are reported, which develop different types of in-plane spontaneous polarizations, thus resulting in different striped morphologies. The anti-ferroelectric order in ß'-In2 Se3 and ferroelectric order of ß*-In2 Se3 are identified, respectively, down to the 2D limit by comprehensive investigations of structural and spectroscopic signatures, including the lattice distortion, the spatial profile of images, the formation of domain structure, and the electronic band-bending by polarization charges at edges. The ferroelectric switching between those two phases are further controlled via applying an electric field generated from the scanning tunneling microscopy tip in a reversible manner. The intriguing tunability between the (anti-)ferroelectric orders in the 2D limit provides a promising platform for studying the interplay between electronic structure and ferroelectricity in van der Waals materials, and promotes potential development of miniaturized transistors and memory devices based on electric polarizations.

Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas.

Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In2Se3. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.

Heterostructures of tellurium on NbSe2 from sub-monolayer to few-layer films.

As a single-elemental system, tellurium can exist stably in the form of layers with an intriguing multivalence character, which constructs a new member of the 2D family. However, the growth and electronic structure of tellurium films are still far from known at present. Here, combined with molecular beam epitaxy, scanning tunneling microscopy/spectroscopy measurements and density functional theory calculations, we report the geometric and electronic structures of tellurium grown on NbSe2 from sub-monolayer to few-layer films. At the sub-monolayer coverage, we obtain two types of adatom-induced ordered superstructures that are strongly coupled with NbSe2. With the increase in coverage, the few-layer tellurium films adopt the α-phase form, showing internal strain-induced ripple patterns in the few-layers and bulk-like in thick layers with distinct edge geometries. The band gap of α-tellurium films decreases with the increase in thickness, which is associated with notable in-gap states. These observations, corroborated with DFT calculations, emphasize the important role of the NbSe2 substrate in modulating the structural and electronic properties of tellurium films. Moreover, the interaction between tellurium adatoms and tellurium films leads to √2 × âˆš2 surface reconstruction prior to a new monolayer, conforming to our theoretical calculations. Our work clarifies the kinetic growth of tellurium films on NbSe2 and reveals the tunability of electronic properties via substrate modulation or surface decoration.