Irreversible coherent matching bonding of van der Waals heterostructure lattice by pressure.

The key of heterostructure is the combinations created by stacking various vdW materials, which can modify interlayer coupling and electronic properties, providing exciting opportunities for designer devices. However, this simple stacking does not create chemical bonds, making it difficult to fundamentally alter the electronic structure. Here, we demonstrate that interlayer interactions in heterostructures can be fundamentally controlled using hydrostatic pressure, providing a bonding method to modify electronic structures. By covering graphene with boron nitride and inducing an irreversible phase transition, the conditions for graphene lattice-matching bonding (IMB) were created. We demonstrate that the increased bandgap of graphene under pressure is well maintained in ambient due to the IMB in the interface. Comparison to theoretical modeling emphasizes the process of pressure-induced interfacial bonding, systematically generalizes, and predicts this model. Our results demonstrate that pressure can irreversibly control interlayer bonding, providing opportunities for high-pressure technology in ambient applications and IMB engineering in heterostructures.

Research on Fabrication of Phononic Crystal Soft-Supported Graphene Resonator.

In aviation, aerospace, and other fields, nanomechanical resonators could offer excellent sensing performance. Among these, graphene resonators, as a new sensitive unit, are expected to offer very high mass and force sensitivity due to their extremely thin thickness. However, at present, the quality factor of graphene resonators at room temperature is generally low, which limits the performance improvement and further application of graphene resonators. Enhancing the quality factor of graphene resonators has emerged as a pressing research concern. In a previous study, we have proposed a new mechanism to reduce the energy dissipation of graphene resonators by utilizing phononic crystal soft-supported structures. We verified its feasibility through theoretical analysis and simulations. This article focuses on the fabrication of a phononic crystal soft-supported graphene resonator. In order to address the issues of easy fracture, deformation, and low success rate in the fabrication of phononic crystal soft-supported graphene resonators, we have studied key processes for graphene suspension release and focused ion beam etching. Through parameter optimization, finally, we have obtained phononic crystal soft-supported graphene resonators with varying cycles and pore sizes. Finally, we designed an optical excitation and detection platform based on Fabry-Pérot interference principle and explored the impact of laser power and spot size on phononic crystal soft-supported graphene resonators.

Pressure-induced disorder and nanosizing inhibits superconductivity in In2Te3.

The generation of disorder often gives rise to profound and irreversible physical phenomena. Here, we explore the influence of disorder on the superconducting properties of In2Te3through comprehensive high-pressure investigations. Building upon previous findings, we investigated the progressive suppression of superconductivity in In2Te3during the depressurization process: the increased disorder that ultimately leads to the complete disappearance of the superconducting state. Simultaneously, our high-pressure x-ray diffraction analysis reveals an irreversible structural phase transition. Furthermore, microstructure analysis using transmission electron microscopy clearly demonstrates both grain refinement and a substantial enhancement of disorder. These findings not only provide valuable insights into the mechanism by which disorder suppresses superconductivity, but also offer guidance for future advancements in the fabrication of atmospheric-pressure superconductors.

Strain-induced electronic structures and band-gap of few-layer AgInP2S6.

The band gap and mechanical control ability of two-dimensional materials largely determine the application value of two-dimensional devices in optical and electronic properties, so the bandgap controllability of two-dimensional materials broadens the application range of multi-functional devices. In the layered van der Waals (vdW) material AgInP2S6, the band gap can be adjusted by the number of layers and flexible strain, and the few layers AgInP2S6have discrete band gap values, which are also relevant for optoelectronic applications. In the strain range of up to 2.7% applied, the band gap can be adjusted, and the film is relatively stable under strain. We further analyzed the physical mechanism of flexible strain band gap regulation and found that strain-regulation reduced the band gap and increased the chemical bond length. These studies open up new opportunities for the future development of vdW material photoelectric resonators represented by AgInP2S6, and have important reference value.

Pressure-Quenched Superconductivity in Weyl Semimetal NbP Induced by Electronic Phase Transitions under Pressure.

The TaAs family (NbAs, TaAs, NbP, TaP) are kinds of Weyl semimetals with lots of novel properties, thus attracting considerable attention in recent years. Here, we systematically studied the Weyl semimetal NbP up to 72 GPa through the resistivity, Raman spectra, X-ray diffraction measurements, and first-principles density functional theory (DFT) calculations. A pressure-induced semimetal-metal transition was observed at ∼36 GPa, which was further confirmed by the DFT calculations. With further compression up to 52 GPa, a superconducting state was observed. Interestingly, the Tc increases significantly upon decompression and shows a dome-shaped trend as a function of pressure. Surprisingly, the pressure-induced superconductivity can be quenched to ambient pressure, and all transitions under pressure do not involve any structural change. Our work not only depicts a phase diagram of the NbP system under high pressure but also provides a new experimental insight for superconductivity in Weyl semimetals.

Superconductivity in In2Te3 under Compression Induced by Electronic and Structural Phase Transitions.

Indium telluride (In2Te3) is a typical layered material among III-IV families that are extremely sensitive to pressure and strain. Here, we use a combination of high-pressure electric transport, Raman, XRD, and first-principles calculations to study the electronic properties and structural evolution characteristics of In2Te3 under high pressure. Our results reveal the evidence of isostructure electronic transitions. First-principle calculations demonstrate that the evolution of phonon modes is associated with the transition from semiconductor to metal due to the increase in the density of states near the Fermi level. The pressure-induced metalization as a precursor monitors the structural phase transition, and then the superconductivity is produced. Further, in decompression, Tc slightly increased and remained at 3.0 GPa, and then the disorder is present and the superconductivity is suppressed. Our work not only perfects the superconducting phase of the In-Te system under pressure but also provides a reference for further superconducting research and applications.