Broadband long-wave infrared high-absorption of active materials through hybrid plasmonic resonance modes.

Broadband high absorption of long-wavelength infrared light for rough submicron active material films is quite challenging to achieve. Unlike conventional infrared detection units, with over three-layer complex structures, a three-layer metamaterial with mercury cadmium telluride (MCT) film sandwiched between an Au cuboid array and Au mirror is studied through theory and simulations. The results show that propagated/localized surface plasmon resonance simultaneously contribute to broadband absorption under the TM wave of the absorber, while the Fabry-Perot (FP) cavity resonance causes absorption of the TE wave. As surface plasmon resonance concentrates most of the TM wave on the MCT film, 74% of the incident light energy is absorbed by the submicron thickness MCT film within the 8-12 µm waveband, which is approximately 10 times than that of the rough same thickness MCT film. In addition, by replacing the Au mirror with Au grating, the FP cavity along the y-axis direction was destroyed, and the absorber exhibited excellent polarization-sensitive and incident angle-insensitive properties. For the corresponding conceived metamaterial photodetector, as carrier transit time across the gap between Au cuboid is much less than that of other paths, the Au cuboids simultaneously act as microelectrodes to collect photocarriers generated in the gap. Thus the light absorption and photocarrier collection efficiency are hopefully improved simultaneously. Finally, the density of the Au cuboids is increased by adding the same arranged cuboids perpendicular to the original direction on the top surface or by replacing the cuboids with crisscross, which results in broadband polarization-insensitive high absorption by the absorber.

Evaluation of ESAT6-CFP10 Skin Test for Mycobacterium tuberculosis Infection among Persons Living with HIV in China.

Recent global guidelines recommend Mycobacterium tuberculosis antigen-based skin tests, such as the ESAT6-CFP10 (EC) skin test, as acceptable alternatives to the tuberculin skin test (TST) and the QuantiFERON-TB Gold In-Tube test (QFT). However, the diagnostic value of these tests among persons living with HIV (PLHIV) is unknown. We aimed to assess the diagnostic accuracy of the EC among a cohort of PLHIV in China. We recruited PLHIV in Jiangsu Province, China, to assess sensitivity and specificity of the EC test. Participants were tested with the QFT, TST, and EC skin test. Results were stratified by age, M. tuberculosis BCG vaccination, and CD4 count. The sensitivity and specificity of the EC skin test was assessed using distinct cutoffs of the QFT and TST. Of 350 PLHIV enrolled in the study, 58 (16.6%), 89 (25.4%), and 59 (16.9%) tested positive with the EC test, the QFT, and the TST, respectively. Positivity increased with CD4 count; however, these trends were similar across tests. At a 5-mm cutoff, EC skin test specificity was high (99.6%, 95% confidence interval [CI] 95% CI = 97.7 to 100.0); however, sensitivity was moderate (81.4%; 95% CI = 66.6 to 91.6). After stratifying by BCG, the sensitivity and specificity were 86.4% (95% CI = 65.1 to 97.1) and 99.1% (95% CI = 95.0 to 100.0) among vaccinated PLHIV and 76.2% (95% CI = 52.8 to 91.8) and 100.0% (95% CI = 97.2 to 100.0) among unvaccinated PLHIV, respectively. Among PLHIV, the diagnostic value of the EC skin test remained high, regardless of BCG vaccination or CD4 count. The EC skin test performed comparably to TST and may be a valid alternative diagnostic test to use in settings or populations with high HIV prevalence and BCG vaccination. To our knowledge, this is the first study to evaluate the novel ESAT6-CFP10 skin test among PLHIV. Among 350 PLHIV, the test displayed high specificity and sensitivity, a finding which did not markedly differ based on BCG vaccination and CD4 count.

Positive rate and risk factors of latent tuberculosis infection among persons living with HIV in Jiangsu Province, China.

Objective: To analyze the latent tuberculosis infection (LTBI) among persons living with HIV(PLWH) in Jiangsu Province, to explore the factors affecting the positive rate of LTBI, and to take appropriate measures to control tuberculosis (TB) infection. Methods: A cross-sectional study was conducted among PLWH in Jiangsu Province from June to July 2021. All PLWH in Jiangsu Province were used as the study population. Currently, the diagnosis of LTBI lacks a "gold standard" and can only be assisted by the immunological method. In this study, Tuberculin skin test (TST), ESAT6-CFP10 test (EC), and QuantiFERON-TB gold in-tube (QFT) were used to detect the positive rate of LTBI among PLWH and to analyze their risk factors. Results: A total of 340 prisoners were included, 89.7% were male, the median age was 38 years [Interquartile Range (IQR):32-46 years], these patients were on Antiviral Therapy (ART), and median CD4 counts was 376 (IQR: 261-496), 103 (30.3%) were positive in at least one test, LTBI by TST was 16.5%, LTBI by EC was 15.9%, LTBI by QFT was 26.2%. Univariate analysis showed the results for TST, EC, and QFT were not affected by CD4 counts (p>0.05), and multivariate analysis showed that a history of incarceration was associated with an increased risk of positive TST (adjusted odds ratio [aOR]=1.98;95% CI,1.03-3.82), EC (aOR=2.65;95% CI,1.37-5.12) and QFT (aOR=2.01;95%CI,1.12-3.57), in addition, female gender was associated with increased risk of positive TST (aOR=3.66;95%CI,1.60-8.37) and EC (aOR=3.43;95%CI,1.46-8.07), and contact history of TB patients was associated with increased risk of TST (aOR= 2.54;95%CI,1.23-5.22) and QFT (aOR=2.03;95%CI,1.03-3.99), and ethnic minorities (aOR=0.26;95%CI,0.12-0.57), longer duration of incarceration was associated with an increased risk of positive QFT (aOR=1.12;95%CI,1.02-1.24). Conclusions Female gender, and ethnic minorities, history of incarceration, longer duration of incarceration, and contact history of TB patients are risk factors for LTBI among PLWH in Jiangsu Province, and attention should be paid to TB control in this population.

Promoted Mid-Infrared Photodetection of PbSe Film by Iodine Sensitization Based on Chemical Bath Deposition.

In recent years, lead selenide (PbSe) has gained considerable attention for its potential applications in optoelectronic devices. However, there are still some challenges in realizing mid-infrared detection applications with single PbSe film at room temperature. In this paper, we use a chemical bath deposition method to deposit PbSe thin films by varying deposition time. The effects of the deposition time on the structure, morphology, and optical absorption of the deposited PbSe films were investigated by x-ray diffraction, scanning electron microscopy, and infrared spectrometer. In addition, in order to activate the mid-infrared detection capability of PbSe, we explored its application in infrared photodetection by improving its crystalline quality and photoconductivity and reducing tge noise and high dark current of PbSe thin films through subsequent iodine treatment. The iodine sensitization PbSe film showed superior photoelectric properties compared to the untreated sample, which exhibited the maximum of responsiveness, which is 30.27 A/W at 808 nm, and activated its detection ability in the mid-infrared (5000 nm) by introducing PbI2, increasing the barrier height of the crystallite boundary and carrier lifetimes. This facile synthesis strategy and the sensitization treatment process provide a potential experimental scheme for the simple, rapid, low-cost, and efficient fabrication of large-area infrared PbSe devices.

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium.

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi2Te3) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi2Te3 layer, a Gr/Bi2Te3/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 µm) with a high specific detectivity (D*) up to 1012 Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi2Te3/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi2Te3 for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

Photonic nanojets with ultralong working distance and narrowed beam waist by immersed engineered dielectric hemisphere.

Engineered spherical micro-lens can manipulate light at sub-wavelength scale and emerges as a promising candidate to extend the focal length and narrow the focal spot size. Here, we report the generation of photonic nanojets (PNJs) with an ultralong working distance and narrowed beam waist by an immersed engineered hemisphere. Simulations show that a two-layer hemisphere of 4.5 µm radius exhibits a PNJ with the working distance of 9.6 µm, full width at half maximum of 287 nm, and length of 23.37 λ, under illumination of a plane wave with a 365 nm wavelength. A geometrical optics analysis indicated that the formed PNJ behind the immersed two-layer hemisphere results from the convergence of light of the outer-hemisphere fringe area, which refracts into and passes through the outer hemisphere and then directly leaves the outer-hemisphere flat surface. Thus the embedded hemisphere is comparable to an immersed focusing lens with high numerical aperture, which can promise both long working distance and narrowed beam waist. This is further demonstrated with the corresponding embedded-engineered single-layer hemisphere, whose spherical face is partly cut parallel to the hemispherical flat surface. In addition, the hemisphere is compatible with adjacent laser wavelengths. Finally, a spot size smaller than 0.5 λ is demonstrated in the lithography simulation. Due to these hemispheres low cost, they have potential in far-field lithography for pattern arrays with line width less than 0.5 λ.

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response.

Silicon-based photodetectors as the main force in visible and near-infrared detection devices have been deeply embedded in modern technology and human society, but due to the characteristics of silicon itself, its response wavelength is generally less than 1100 nm. It is an interesting study to combine the state-of-art silicon processing with emerging infrared-sensitive Lead sulfide colloidal quantum dots (PbS-CQDs) to produce a photodetector that can detect infrared light. Here, we demonstrated a silicon-compatible photodetector that could be integrated on-chip, and also sensitive to infrared light which is owing to a PbS-CQDs absorption layer with tunable bandgap. The device exhibit extremely high gain which reaches maximum detectivity [Formula: see text], fast response 211/558 µs, and extremely high external quantum efficiency [Formula: see text], which is owing to new architecture and reasonable ligand exchange options. The performance of the device originates from the new architecture, that is, using the photovoltaic voltage generated by the surface of PbS-CQDs to change the width of the depletion layer to achieve detection. Besides, the performance improvement of devices comes from the addition of PbS-CQDs (Ethanedithiol treated) layer, which effectively reduces the fall time and makes the device expected to work at higher frequencies. Our work paves the way for the realization of cost-efficient high-performance silicon compatible infrared optoelectronic devices.

Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors.

As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi2Te3/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi2Te3/organics thin film can reach 2.56, which proves that Bi2Te3 can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405-3500 nm). The highest responsivity (Ri) of optimized devices can reach up to 23.54 AW-1; surprisingly, the Ri of the device can still reach 1.93 AW-1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.

Three-Dimensional Topological Insulator Bi2Te3/Organic Thin Film Heterojunction Photodetector with Fast and Wideband Response from 450 to 3500 Nanometers.

In the pursuit of broadband photodetection materials from visible to mid-IR region, the fresh three-dimensional topological insulators (3D TIs) are theoretically predicted to be a promising candidate due to its Dirac-like stable surface state and high absorption rate. In this work, a self-powered inorganic/organic heterojunction photodetector based on n-type 3D TIs Bi2Te3 combined with p-type pentacene thin film was designed and fabricated. Surprisingly, it was found that the Bi2Te3/pentacene heterojunction photodetector exhibited a fast and wideband response from 450 to 3500 nm. The optimized responsivity of photodetector reached 14.89 A/W, along with the fast response time of 1.89 ms and the ultrahigh external quantum efficiency of 2840%. Moreover, at the mid-IR 3500 nm, our devices demonstrated a responsivity of 1.55 AW-1, which was several orders of magnitude higher than that of previous 3D TIs photodetector. These excellent properties indicate that the inorganic/organic heterojunction, that is, the combination of 3D TIs with organic materials, is an exciting structure for high performance photodetectors in the wideband detection region. On account of the fact that the device is constructed on mica substrate, this work also represents a potential scenario for flexible optoelectronic devices.