Effect of Fe Doping Profile on Current Collapse in GaN-based RF HEMTs.

Using computer-aided design (TCAD) simulation, the impact of the Fe doping profile, including concentration, decay rate, and depth of the doping region on current-collapse magnitude (▵CC) in 0.5-µm gated GaN-based high electron mobility transistors (HEMTs) is systematically investigated. Accurate simulation models are established and developed to facilitate the fabrication of electronics. It is elucidated that the intricate interplay between trapping and de-trapping of Fe-related traps at the gate-drain edge is responsible for current collapse. The concentration and decay rate of the doping region have a more significant impact on current collapse than the depth. Increased trap state density near two-dimensional electron gas (2DEG) channel caused by deep-level acceptors would boost ▵CC. However, a minor dynamic reduction in 2DEG density (nT) induces a relatively small ▵CC. By adjusting the concentration, decay rate, and depth of the doping region, ▵CC of GaN-based Radio Frequency (RF) HEMTs can be reduced by approximately 50.3 %. The optimized distribution of Fe doping discussed in this work helps to prepare GaN-based RF HEMTs with a limited current collapse effect.

Whole-genome resequencing reveals new mutations in candidate genes for Beichuan-white goat prolificacya.

In this study, we evaluated the copy number variation in the genomes of two groups of Beichuan-white goat populations with large differences in litter size by FST method, and identified 1739 genes and 485 missense mutations in the genes subject to positive selection. Through functional enrichment, ITGAV, LRP4, CDH23, TPRN, RYR2 and CELSR1 genes, involved in embryonic morphogenesis, were essential for litter size trait, which received intensive attention. In addition, some mutation sites of these genes have been proposed (ITGAV: c.38C > T; TPRN: c.133A > T, c.1192A > G, c.1250A > C; CELSR1: c.7640T > C), whose allele frequencies were significantly changed in the high fecundity goat group. Besides, we found that new mutations at these sites altered the hydrophilicity and 3D structure of the protein. Candidate genes related to litter size in this study and their missense mutation sites were identified. These candidate genes are helpful to understand the genetic mechanism of fecundity in Beichuan white goat, and have important significance for future goat breeding.

Effect of direct-fed microbials on growth performance, blood biochemical indices, and immune status of female goats.

The effect of direct-feed microbial (DFM) treatment on body weight, serum biochemical indexes, serum immunoglobulins, and serum cytokines was studied. The study was a completely randomized design with 20 growing females Beichuan white goats, weighing 25.11 ± 1.96 kg, divided into two groups of 10 goats per treatment. Goats were offered (1) 10 mL saline solution (Control group) (2) or 10 mL microbials solution (DFM group) on days 0 and 7 for two times. No effect on final body weight and body size was observed between DFM and control group (p > 0.05). DFM treatment had greater serum total protein, globulin, and albumin/globulin ratio than the control treatment (p < 0.05). The concentrations of IgA, IgG, IgM, INF-γ, and IL-2 in DFM group were significantly higher than those in the control group on days 7, 14, and 21 (p < 0.05), and the highest content was detected on day 14 of the experiment. The concentrations of IgA, IgG, IgM, IL-2, INF-γ, INF-α, IL-4, and IL-5 in DFM group on day 14 were higher than those on day 0 (p < 0.05). In conclusion, DFM enhanced serum immunoglobulins and cytokines without affecting body weight, body size, and normal serum metabolism.

Effects of lactation number and litter size on the chemical composition and immune components of goat colostrum.

This study aimed to evaluate the effect of the number of lactations and litter size on the chemical composition, immunoglobulins, and cytokines of goat colostrum. The experiment was conducted at the Animal Research Base, Mianyang Academy of Agricultural Sciences, from February to March 2021. After delivery, 48 colostrum samples were obtained every 24 h by manual milking from both udders. The contents of colostrum proteins, IgA, and IgM increased markedly up to 48 h postpartum, reaching 250 and 1250 µg/mL, respectively (p < 0.01 compared with 0 h). However, the total Ig and IgG contents dropped quickly at 48 h postpartum to around 4.5 and 6 mg/mL, respectively, and continued to do so until 96 h postpartum (p < 0.01). As for litter size, the colostrum DM, fat, total Ig, IgG, INF-γ, and IL-2 of twin-birth goats were higher than those of single-birth goats at 0 h postpartum. Moreover, the colostrum of multiparous goats contained higher total Ig, IgA, IgG, and INF-γ concentrations than that of primiparous goats at 0 h postpartum (p < 0.01). However, the colostrum INF-α and IL-5 contents of multiparous goats were lower than those of primiparous goats at 0 h postpartum (p < 0.05). Available information indicates that colostrum secretion takes place until 48 h postpartum and that the effect of litter size and lactation number on colostrum quality is observed at 0 h postpartum.

Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer.

The efficiency of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) is limited by the high absorption issue of the p-GaN contact layer or poor contact properties of the transparent p-AlGaN contact layer. Enhancement of the light output efficiency and thermal stability of DUV LEDs with an emission wavelength of 272 nm was investigated in this work. Ag nanodots on an 8-nm p-GaN cap layer were used to form ohmic contact, and Al and Mg reflective mirrors were employed to enhance the light output power (LOP) of DUV LEDs. However, serious deterioration of LOP occurred after the high-temperature process for the LEDs with Al and Mg reflective mirrors, which can be attributed to the damage to the ohmic contact properties. A Ti barrier layer was inserted between the Ag/p-GaN and Al layers to prevent the degeneration of ohmic contact. The wall-plug efficiency (WPE) of DUV LEDs fabricated by the Ag-nanodot/Ti/Al electrode is 1.38 times that of LEDs fabricated by adopting a thick Ag layer/Ti/Al at 10 mA after a high-temperature process. The Ag-nanodot/Ti/Al electrode on thin p-GaN is a reliable technology to improve the WPE of DUV LEDs. The experimental and simulated results show that the ohmic contact is important for the hole-injection efficiency of the DUV LEDs when p-GaN is thin, and a slight increase in the contact barrier height will decrease the WPE drastically. The results highlighted the importance of thermally stable ohmic contacts to achieve high-efficiency DUV LEDs and demonstrated a feasible route for improving the LOP of DUV LEDs with a thin p-GaN cap layer and stable reflective electrodes.

Optimization of annealing conditions for Ag/p-GaN ohmic contacts.

The electrical and optical properties of Ag/p-GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance (ρ c) values as low as 1.2 × 10-4 Ω·cm2 were obtained from the Ag/p-GaN contact annealed at 400 °C for 60 s in ambient O2/N2 (1:10). We found that the participation of oxygen improves the formation of ohmic contacts. Oxygen might remove the H in Mg-H complexes to activate the Mg acceptors and enhance Ga out-diffusion to form an Ag-Ga solid solution. We also found that the reflectivity of the Ag layer decreases with increasing annealing temperature in the O2-containing ambient environment. Thus, an optimal annealing condition of Ag/p-GaN for blue and green LEDs is suggested based on these results. We also used the suggested annealing conditions to form ohmic contacts on DUV LEDs and achieved good electrical performance. The forward voltages of UVC LEDs fabricated with annealed Ag contacts were 6.60 V (7.66 V) at a 40 mA (100 mA) injection current.

Fabrication of CsxFA1-xPbI3 Mixed-Cation Perovskites via Gas-Phase-Assisted Compositional Modulation for Efficient and Stable Photovoltaic Devices.

Over the past few years, significant attention has been focused on HC(NH2)2PbI3 (FAPbI3) perovskite due to its reduced band gap and enhanced thermal stability compared with the most studied CH3NH3PbI3 (MAPbI3). However, FAPbI3 is sensitive to moisture and also encounters a serious structural phase-transition from photoactive α-phase to photoinactive δ-phase. Herein, we first develop a novel FAI gas-phase-assisted mixed-cation compositional modulation method to fabricate CsxFA1-xPbI3 perovskite solar cells (PSCs), and realize the structural stabilization of α-phase FAPbI3 with the incorporation of smaller inorganic Cs+ ions. Through the setting of different Cs+ contents (x = 0, 0.05, 0.10, 0.15, 0.20, 0.25, 0.30, 0.50) along with a moderate FAI vapor deposition process, a series of CsxFA1-xPbI3 films with consistent compositions are fabricated, which perfectly resolves the main blocking problems of the conventional solution approach, such as difficulty in compositional control and rough film morphology. Meanwhile, we find that the Cs+ amount is crucial for generating phase-pure CsxFA1-xPbI3 (0 < x < 0.30) while higher contents result in phase segregation. Consequently, the optimum amount of Cs+ (x = 0.15) is verified, and Cs0.15FA0.85PbI3 shows the smallest unit cell volume and good moisture-resistant feature. Correspondingly, the highest power conversion efficiency (PCE) of 14.45% based on Cs0.15FA0.85PbI3 PSCs is successfully achieved in this work.

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs' performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the improvement of the quality of depletion region by inserting an undoped GaN layer, as well as reduction of the Shockley-Read-Hall recombination in InGaN/GaN MQWs.