RESUMO
We designed and simulated freestanding dielectric optical metasurfaces based on arrays of etched nanoholes in a silicon membrane. We showed 2π phase control and high forward transmission at mid-infrared (mid-IR) wavelengths around 4.2 µm by tuning the dimensions of the holes. We also identified the mechanisms responsible for high forward scattering efficiency and showed that these conditions are connected with the well-known Kerker conditions already proposed for isolated scatterers. A beam deflector was designed and optimized through sequential particle swarm and gradient descent optimization to maximize transmission efficiency and reduce unwanted grating orders. Such freestanding silicon nanohole array metasurfaces are promising for the realization of silicon-based mid-IR optical elements.
RESUMO
We would like to clarify our paper [Opt. Express25, 377 (2017)] abstract sentence "These beams carry orbital angular momentum proportional to the number of intertwined helices constituting the wavefront."
RESUMO
Vortex beams are characterized by a helical wavefront and a phase singularity point on the propagation axis that results in a doughnut-like intensity profile. These beams carry orbital angular momentum proportional to the number of intertwined helices constituting the wavefront. Vortex beams have many applications in optics, such as optical trapping, quantum optics and microscopy. Although beams with such characteristics can be generated holographically, spin-to-orbital angular momentum conversion has attracted considerable interest as a tool to create vortex beams. In this process, the geometrical phase is exploited to create helical beams whose handedness is determined by the circular polarization (left/right) of the incident light, that is by its spin. Here we demonstrate high-efficiency Spin-to-Orbital angular momentum-Converters (SOCs) at visible wavelengths based on dielectric metasurfaces. With these SOCs we generate vortex beams with high and fractional topological charge and show for the first time the simultaneous generation of collinear helical beams with different and arbitrary orbital angular momentum. This versatile method of creating vortex beams, which circumvents the limitations of liquid crystal SOCs and adds new functionalities, should significantly expand the applications of these beams.
RESUMO
Optical antennas enable the control of light-matter interaction on the nanometer scale. Efficient on-chip electrical switching of plasmonic resonances is a crucial step toward the integration of optical antennas into practical optoelectronic circuits. We propose and numerically investigate the on-chip low-voltage linear electrical tuning of a narrowband optical antenna perfect absorber via a piezoelectric optomechanic cavity. Near unity absorption is realized by an array of gold nanostrip antennas separated from a membrane-based deformable backreflector by a small gap. A narrow linewidth of 33 nm at 2.58 µm is realized through the coupling between the plasmonic mode and photonic mode in the cavity-enhanced antenna structure. An aluminum nitride piezoelectric layer enabled efficient actuation of the backreflector and therefore changed the gap size, allowing for the tuning of the spectral absorption. The peak wavelength can be shifted linearly by 250 nm with 10 V of tuning voltage, and the tuning range is not limited by the pull-in effect. The polarization dependence of the nanostrip antenna coupled with the optomechanic cavity allows the use of our device as a voltage tunable polarization control device.
RESUMO
We propose a novel technique of enhancing the photodetection capabilities of ultrathin Ge films for normally incident light at 1.55 µm through the guided mode resonance (GMR) phenomenon. Specifically, by suitably patterning the surface of a Ge thin film, it is possible to excite guided modes which are subsequently coupled to free space radiative modes, resulting in spectral resonances that possess locally enhanced near fields with a large spatial extent. Absorption is found to be enhanced by over an order of magnitude over a pristine Ge film of equal thickness. Furthermore, attenuation of incident light for such a structure occurs over very few grating periods, resulting in significantly enhanced theoretical 3 dB bandwidth-efficiency products of ~58 GHz. The nature of the enhancement mechanism also produces spectrally narrow resonances (FWHM ~30 nm) that are polarization sensitive and exhibit excellent angular tolerance. Finally, the proposed device architecture is fully compatible with existing Si infrastructure and current CMOS fabrication processes.