Influence of ion-beam etching by Ar ions with an energy of 200-1000 eV on the roughness and sputtering yield of a single-crystal silicon surface.

The behavior of sputtering yield and the surface roughness of monocrystalline silicon of orientations ⟨100⟩, ⟨110⟩, and ⟨111⟩ under the ion-beam bombardment by neutralized Ar ions with energies of 200-1000 eV is studied. The significant dependence (modulation) of sputtering yield on incidence angle due to crystalline structure is observed. It is shown that a sharp increase in the sputtering yield and a decrease in the effective surface roughness at energies above 400 eV occurs. At energies of more than 400 eV for orientations ⟨100⟩, ⟨110⟩, and ⟨111⟩ at normal ion incidence, smoothing of the effective roughness in the range of spatial frequencies ν∈[4.9⋅10-2-6.3⋅101µm-1] up to a value of 0.17 nm is observed. This makes it possible to use the ion-beam etching technique for finishing polishing, aspherization, and correction of local shape errors of single-crystal silicon substrates, which are of the greatest interest for synchrotrons of the 3rd+ and 4th generation and x-ray free electron lasers.

X-ray scattering by the fused silica surface etched by low-energy Ar ions.

Anomalously high x-ray scattering at a wavelength of 0.154 nm by super-polished substrates of fused silica, which were etched by the argon ions with the energy of 300 eV, is detected. The scattering intensity increases monotonically with increasing of the etching depth. The effect is explained by the scattering on the volume inhomogeneities with the lateral size greater than 0.5 µm of the subsurface "damaged" layer. The concentration of volume inhomogeneities increases with the increase of the fluence of argon ions, but the concentration of implanted argon atoms in the layer quickly reaches the maximum value and then begins a trend of going down. The thickness of the "damaged" layer is approximately equal to the penetration depth of the Ar atoms and can be directly determined from the x-ray specular reflection. It is shown that the presence of volume inhomogeneities of the subsurface "damaged" layer does not affect the geometric roughness of the surface. The observed effect imposes limitations on the usage of grazing incidence x-ray optics without reflective coatings and of the diffuse x-ray scattering (DXRS) method for studying the substrate roughness. A new method that potentially enables to evaluate the applicability of the DXRS method in practice is proposed.

Ultrasmooth beryllium substrates for solar astronomy in extreme ultraviolet wavelengths.

The paper describes a multistage method of forming ultrasmooth substrates based on bulk beryllium. Such substrates are suggested to be used for multilayer extreme ultraviolet mirrors of spacecraft missions on solar corona investigations in the spectral range 17.1-58.4 nm. The technique for chemical nickel plating of the sample surface is described. The process parameters that provide the formation of an amorphous film with a thickness of about 100 microns are presented. The results of mechanical polishing are shown. The effective roughness of 1.3 nm is obtained, which is twice lower than one achievable for a nickel-free beryllium surface. The applicability of the ion beam figuring technique is demonstrated: the initial surface roughness of a nickel film after etching with Ar ions (Eion=200-800 eV) to a depth of 250 nm does not deteriorate. The amorphous silicon film deposition followed by ion polishing made it possible to reduce the microroughness (atomic force microscope frame 2×2 µm) to σ2×2=0.15 nm from the initial σ2×2=0.46 nm. The reflectivity of multilayer mirrors deposited on these substrates turned out to be close to the values obtained on "witnesses" (supersmooth silicon substrates). Moreover, for the Mg/MoSi2 mirror optimized for the wavelength λ=58.4 nm the values of the reflection coefficients of structures on the beryllium substrate and on the silicon "witness" were identical (about 28%).

Polishing the surface of a z-cut KDP crystal by neutralized argon ions.

The sputtering yield and dynamics of the surface roughness of the potassium dihydrogenphosphate-KH2PO4 (KDP) crystal z-cut was initially polished by precision micromilling with a diamond cutter, after which surface treatment by neutralized Ar ions was studied. The sputtering yield turned out to be noticeably higher than the values for materials that are amenable to ion polishing (fused silica, ULE, Zerodur, etc.), but the polishing effect at angles of incidence of 0°, 30°, and 45° was found. A record value of the effective surface roughness in the spatial frequencies range of ν∈[4.9·10-2-6.3·101 µm-1]σeff=0.61 nm was obtained.

Influence of barrier interlayers on the performance of Mo/Be multilayer mirrors for next-generation EUV lithography.

A comparative study was carried out of the structure and reflection performance of four types of multilayer mirror for extreme ultraviolet lithography at 11.2 nm; these were a pure Mo/Be structure and three Mo/Be-based structures with thin B4C, C and Si interlayers. It was demonstrated that Mo/Be mirrors show maximum reflectance at normal incidence, while maximum structural perfection is shown by Mo/Be/Si mirrors. The introduction of B4C and C layers into the structure increases the interlayer roughness and reduces the sharpness of the interfaces, adversely affecting the target coating characteristics. Results are presented for studies using four techniques: X-ray reflectometry, small-angle X-ray scattering, atomic force microscopy, and transmission electron microscopy.

Ion-beam polishing of fused silica substrates for imaging soft x-ray and extreme ultraviolet optics.

We have studied the surface treatment of polished fused silica by neutralized Ar ions with energy of 500-1500 eV and incidence angles of 0-90°. We found the following regularities: for samples that passed the standard procedure of deep polishing (initial effective roughness σ(eff)∼0.5 nm), the effective roughness decreases to the ultrasmooth level (i.e., σ(eff)∼0.25 nm in the range of spatial frequencies q∈[4.9×10(-2)-63] µm(-1)). The effect begins to be noticeable at the material removal of 150 nm and reaches saturation at depths of removal greater than 1 µm. For supersmooth samples (σ(eff)<0.3 nm), the effective roughness keeps the initial level at material removal down to tens of micrometers. The optimal ion energy range is 800-1300 eV (maximum smoothing effect); at higher energy some surface roughness degradation is observed. All the smoothing effects are observed at the incidence angle range θ(in)=0-35°. Increasing the ion energy above 1300 eV increases the etching rate by up to 4 µm per hour (J(ion)=0.8 mA/cm2), which allows for deep aspherization of sized substrates. The technique allows for manufacturing the optical elements for extreme ultraviolet and soft x-ray wavelength ranges with a numerical aperture of up to 0.6.

Application of point diffraction interferometry for middle spatial frequency roughness detection.

The possibilities of applying the point diffraction interferometry (PDI) method for the detection of the middle spatial frequency roughness of superpolished optical surfaces are analyzed. The point source used in the experiment is based on a single mode optical fiber with the subwavelength exit aperture size, which is about 0.25 µm. In a numerical aperture of 0.01 the reference wave root-mean-square deformation is less than 0.005 nm. It is theoretically shown that the possible diffraction-limited lateral resolution of PDI while measuring a spherical substrate of 100 mm curvature radius is about 8 µm. The experiment demonstrated the possibility of obtaining roughness spectra in the range 0.001-0.05 µm(-1). The surface map obtained by PDI, and the roughness spectra obtained by both the PDI and atomic-force microscopy methods are shown.

Note: A stand on the basis of atomic force microscope to study substrates for imaging optics.

A description of a stand based on atomic force microscopy (AFM) for roughness measurements of large optical components with arbitrary surfaces is given. The sample under study is mounted on a uniaxial goniometer which allows the sample to be tilted in the range of ±30°. The inclination enables the local normal along the axis of the probe to be established at any point of the surface under study. A comparison of the results of the measurement of noise and roughness of a flat quartz sample, in the range of spatial frequencies 0.025-70 µm(-1), obtained from "standard" AFM and developed versions is given. Within the experimental error, the measurement results were equivalent. Examples of applications of the stand for the study of substrates for X-ray optics are presented.

Roughness measurement and ion-beam polishing of super-smooth optical surfaces of fused quartz and optical ceramics.

The main problems and the approach used by the authors for roughness metrology of super-smooth surfaces designed for diffraction-quality X-ray mirrors are discussed. The limitations of white light interferometry and the adequacy of the method of atomic force microscopy for surface roughness measurements in a wide range of spatial frequencies are shown and the results of the studies of the effect of etching by argon and xenon ions on the surface roughness of fused quartz and optical ceramics, Zerodur, ULE and Sitall, are given. Substrates of fused quartz and ULE with the roughness, satisfying the requirements of diffraction-quality optics intended for working in the spectral range below 10 nm, are made.

[Properties of lung surfactant during changes in capsaicin-sensitive vagal afferents under conditions of emotional stress].

In this work, we investigated surface active properties and biochemical composition of pulmonary surfactant under emotional stress in condition of neuropeptides pool exhaustion in capsaicin-sensitive afferents of the vagus nerve. It is shown that stress is accompanied by decrease of lung surface active properties and increase of total phospholipids content as result of phosphatidylcholine and lysophospholipid fraction rise. After capsaicin application on the cervical part of the right vagus nerve stress-induced alterations in ipsilateral lung become less considerable, whereas all spectra of changes in contralateral lung is remained.

Short-period multilayer X-ray mirrors.

Multilayer structures with short periods have been systematically investigated using a tunable soft X-ray synchrotron, BESSY II, and X-ray tube radiation. Multilayer X-ray mirrors of W/B(4)C, W/Sc, Mo/B(4)C, Mo/C, La/B(4)C, Cr/C and Cr/Sc, with periods from 0.8 nm to 3.5 nm and number of periods up to 300-400, were constructed and investigated. The high reflectivity and spectral resolution of the mirrors allow them to be used to create multimirror systems for X-ray diagnostics of high-temperature plasma, for X-ray astronomy and microscopy.