Biphenylite as Anode Materials for Alkali Metal Ion Batteries with Self-Enhanced Storage Mechanism.

In this work, we theoretically investigate the feasibility of biphenylite, the van der Waals layered bulk structure from experimental biphenylene network monolayers, as an anode material for alkali metal ions. The results indicate that the theoretical properties of Li, Na, and K in biphenylite are generally beyond those in graphite. Li-biphenylite exhibits a high specific capacity of 744 mAh·g-1, with a corresponding voltage range of 0.90-0.36 V, low diffusion barrier (<0.30 eV), and small volume change (∼9.9%), far exceeding those of Li-graphite. Moreover, a novel self-enhanced storage mechanism is observed and unveiled, in which the heavy intercalation of Li atoms (i.e., electron doping) induces puckered distortion of the nonhoneycomb carbon frameworks to enhance the intercalation ability and capacity of Li ion via a chemical activation of carbon frameworks. Possessing excellent anode performance beyond graphite, biphenylite is a promising "all-around" anode material candidate for alkali metal ion batteries, especially for lithium ion batteries.

Two-dimensional superhard silicon nitrides with widely tunable bandgap, high carrier mobility and hole-doping-induced robust magnetism.

The search for new forms of the traditional bulk materials to enrich their interactions and properties is an attractive subject in two-dimensional (2D) materials. In this work, novel tetra-hexa-mixed coordinated 2D silicon nitrides (Si3N4) and their analogues are systematically investigated via density functional theory. The results show the global minimum 2D structure, Si3N4 (T-aa), is a highly chemically and thermally stable superhard semiconductor with a wide indirect bandgap (about 6.0 eV), which is widely adjustable under both biaxial strain and vertical electric field. It also possesses anisotropic high carrier mobility, up to 5490 cm2 V-1 s-1 at room temperature. Besides, its nitride analogues of group IVA (Si, Ge, Sn, and Pb) exhibit diverse electronic structures with regular bandgap distribution. Remarkably, some nitride analogues display linearly increasing robust magnetism with hole doping. The theoretical Curie temperatures of Si3N4 and Sn3N4 with hole doping (1h+ per unit cell) are 298 and 180 K, respectively. The Si3N4 (T-aa) and its analogues have a variety of excellent properties to be potentially applied in various fields, e.g., semiconductor electronics, spintronics, high-temperature structural materials, and superhard materials.

[Genetic analysis of a patient with Alport syndrome due to compound heterozygous variants of COL4A4 gene].

OBJECTIVE: To analyze the clinical phenotype and genetic characteristics of a patient with Alport syndrome. METHODS: A patient with Alport syndrome who had visited the First Affiliated Hospital of Zhengzhou University in November 2020 was selected as the study subject. Clinical data of the patient were collected. High-throughput sequencing was carried out to detect potential variant of the COL4A3, COL4A4 and COL4A5 genes, and Sanger sequencing was carried out for verification of candidate variants in the family. RESULTS: The main clinical manifestations of the patient included hematuria, proteinuria, and impaired hearing. Audiometric testing suggested symmetrical cochlear sensory neural hearing loss on both sides. Renal biopsy revealed mild mesangial proliferative glomerulonephritis. Genetic testing revealed that the patient has harbored compound heterozygous variants of the COL4A4 gene, namely c.940G>A (p.Gly314Ser) and c.3773G>A (p.Gly1258Asp), which were respectively inherited from her father and mother. Neither variant has been reported before, and were predicted to be pathogenic based on the guidelines from the American College of Medical Genetics and Genomics. CONCLUSION: The c.940G>A (p.Gly314Ser) and c.3773G>A (p.Gly1258Asp) compound heterozygous variants of the COL4A4 gene probably underlay the Alport syndrome in this patient. Above finding has enriched the mutational spectrum of the COL4A4 gene.