Patchwork-Structured Heterointerface of 1T-WS2/a-WO3 with Sustained Hydrogen Spillover as a Highly Efficient Hydrogen Evolution Reaction Electrocatalyst.

Using tungsten disulfide (WS2) as a hydrogen evolution reaction (HER) electrocatalyst brought on several ways to surpass its intrinsic catalytic activity. This study introduces a nanodomain tungsten oxide (WO3) interface to 1T-WS2, opening a new route for facilitating the transfer of a proton to active sites, thereby enhancing the HER performance. After H2S plasma sulfurization on the W layer to realize nanocrystalline 1T-WS2, subsequent O2 plasma treatment led to the formation of amorphous WO3 (a-WO3), resulting in a patchwork-structured heterointerface of 1T-WS2/a-WO3 (WSO). Addition of a hydrophilic interface (WO3) facilitates the hydrogen spillover effect, which represents the transfer of absorbed protons from a-WO3 to 1T-WS2. Moreover, the faster response of the cathodic current peak (proton insertion) in cyclic voltammetry is confirmed by the higher degree of oxidation. The rationale behind the faster proton insertion is that the introduced a-WO3 works as a proton channel. As a result, WSO-1.2 (the ratio of 1T-WS2 to a-WO3) exhibits a remarkable HER activity in that 1T-WS2 consumes more protons provided by the channel, showing an overpotential of 212 mV at 10 mA/cm2. Density functional theory calculations also show that the WO3 phase gives higher binding energies for initial proton adsorption, while the 1T-WS2 phase shows reduced HER overpotential. This improved catalytic performance demonstrates a novel strategy for water splitting to actively elicit the related reaction via efficient proton transport.

Wafer-Scale and Low-Temperature Growth of 1T-WS2 Film for Efficient and Stable Hydrogen Evolution Reaction.

The metallic 1T phase of WS2 (1T-WS2 ), which boosts the charge transfer between the electron source and active edge sites, can be used as an efficient electrocatalyst for the hydrogen evolution reaction (HER). As the semiconductor 2H phase of WS2 (2H-WS2 ) is inherently stable, methods for synthesizing 1T-WS2 are limited and complicated. Herein, a uniform wafer-scale 1T-WS2 film is prepared using a plasma-enhanced chemical vapor deposition (PE-CVD) system. The growth temperature is maintained at 150 °C enabling the direct synthesis of 1T-WS2 films on both rigid dielectric and flexible polymer substrates. Both the crystallinity and number of layers of the as-grown 1T-WS2 are verified by various spectroscopic and microscopic analyses. A distorted 1T structure with a 2a0 × a0 superlattice is observed using scanning transmission electron microscopy. An electrochemical analysis of the 1T-WS2 film demonstrates its similar catalytic activity and high durability as compared to those of previously reported untreated and planar 1T-WS2 films synthesized with CVD and hydrothermal methods. The 1T-WS2 does not transform to stable 2H-WS2 , even after a 700 h exposure to harsh catalytic conditions and 1000 cycles of HERs. This synthetic strategy can provide a facile method to synthesize uniform 1T-phase 2D materials for electrocatalysis applications.

Stable 1T Tungsten Disulfide Monolayer and Its Junctions: Growth and Atomic Structures.

Transition-metal dichalcogenides in the 1T phase have been a subject of increasing interest, which is partly due to their fascinating physical properties and partly to their potential applications in the next generation of electronic devices, including supercapacitors, electrocatalytic hydrogen evolution, and phase-transition memories. The primary method for obtaining 1T WS2 or MoS2 has been using ion intercalation in combination with solution-based exfoliation. The resulting flakes are small in size and tend to aggregate upon deposition, forming an intercalant-TMD complex with small 1T and 1T' patches embedded in the 2H matrix. Existing growth methods have, however, produced WS2 or MoS2 solely in the 2H phase. Here, we have refined the growth approach to obtain monolayer 1T WS2 up to 80 µm in size based on chemical vapor deposition. With the aid of synergistic catalysts (iron oxide and sodium chloride), 1T WS2 can nucleate in the infant stage of the growth, forming special butterfly-like single crystals with the 1T phase in one wing and the 2H phase in the other. Distinctive types of phase boundaries are discovered at the 1T-2H interface. The 1T structure thus grown is thermodynamically stable over time and even persists at a high temperature above 800 °C, allowing for a stepwise edge epitaxy of lateral 1T heterostructures. Atomic images show that the 1T WS2-MoS2 heterojunction features a coherent and defectless interface with a sharp atomic transition. The stable 1T phase represents a missing piece of the puzzle in the research of atomic thin van der Waals crystals, and our growth approach provides an accessible way of filling this gap.

Stable Metallic 1T-WS2 Nanoribbons Intercalated with Ammonia Ions: The Correlation between Structure and Electrical/Optical Properties.

Stable metallic 1T-WS2 nanoribbons with zigzag chain superlattices, highly stabilized by ammonia-ion intercalation, are produced using a facile bottom-up process. The atomic structure of the nanoribbons, including W-W reconstruction and W-S distorted octahedral coordination, results in distinctive electrical transport and optical Raman scattering properties that are very different from semiconducting 2H-WS2 . The correlations between structure and properties are further confirmed by theory calculations.