High-performance electrolyte-gated amorphous InGaZnO field-effect transistor for label-free DNA sensing.

Accurate, convenient, label-free, and cost-effective biomolecules detection platforms are currently in high demand. In this study, we showcased the utilization of electrolyte-gated InGaZnO field-effect transistors (IGZO FETs) featuring a large on-off current ratio of over 106 and a low subthreshold slope of 78.5 mV/dec. In the DNA biosensor, the modification of target DNA changed the effective gate voltage of IGZO FETs, enabling an impressive low detection limit of 0.1 pM and a wide linear detection range from 0.1 pM to 1 µM. This label-free detection method also exhibits high selectivity, allowing for the discrimination of single-base mismatch. Furthermore, the reuse of gate electrodes and channel films offers cost-saving benefits and simplifies device fabrication processes. The electrolyte-gated IGZO FET biosensor presented in this study shows great promise for achieving low-cost and highly sensitive detection of various biomolecules.

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection.

Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the influences of oxygen partial pressure (PO) for DSCL-TFTs on their sensing abilities by experiments as well as Technology Computer Aided Design (TCAD) simulations. With the increase in PO values for the DSCL depositions, the sensing parameters, including photogenerated current (Iphoto), sensitivity (S), responsivity (R), and detectivity (D*) of the corresponding TFTs, apparently degraded. Compared with PO variations for the OR-IGZO films, those for the OD-IGZO depositions more strongly influenced the sensing performances of the DSCL-TFT UV light detectors. The TCAD simulations showed that the variations of the electron concentrations (or oxygen vacancy (VO) density) with PO values under UV light illuminations might account for these experimental results. Finally, some design guidelines for DSCL-TFT UV light detectors were proposed, which might benefit the potential applications of these novel semiconductor devices.

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers.

We investigated the electrical performance and positive bias stress (PBS) stability of the amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with SiOx passivation layers after the post-annealing treatments in different atmospheres (air, N2, O2 and vacuum). Both the chamber atmospheres and the device passivation layers proved important for the post-annealing effects on a-IGZO TFTs. For the heat treatments in O2 or air, the larger threshold voltage (VTH) and off current (IOFF), smaller field-effect mobility (µFE), and slightly better PBS stability of a-IGZO TFTs were obtained. The X-ray photoemission spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) measurement results indicated that the oxygen atoms from the ambience led to less oxygen vacancies (VO) and more oxygen-related defects in a-IGZO after the heat treatments in O2 or air. For the annealing processes in vacuum or N2, the electrical performance of the a-IGZO TFTs showed nearly no change, but their PBS stability evidently improved. After 4500 seconds' stressing at 40 V, the VTH shift decreased to nearly 1 V. In this situation, the SiOx passivation layers were assumed to effectively prevent the oxygen diffusion, keep the VO concentration unchanged and refuse the oxygen-related defects into the a-IGZO films.

Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability.

We investigated the influence of the multilayered hybrid buffer consisting of Al2O3/PA (polyacrylic) organic layer/Al2O3 on the electrical and mechanical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multilayered organic/inorganic hybrid buffer has multiple beneficial effects on the flexible TFTs under repetitive bending stress. First, compared to the PA or Al2O3 single-layered buffer, the multilayered hybrid buffer showed an improved WVTR value of 1.1 × 10-4 g/m2 day. Even after 40,000 bending cycles, the WVTR value of the hybrid buffer increased only by 17%, while the WVTR value of the Al2O3 layer doubled after cyclical bending stress. We also confirmed that the hybrid buffer has advantages in mechanical durability of the TFT layers because of the change in the position of the neutral plane and the strain reduction effect by the PA organic layer. When we fabricate a top-gate a-IGZO TFT with the hybrid buffer layer (HB TFT), the device shows Vth = 0.74 V, µFE = 14.4 cm2/V·s, a subthreshold slope of 0.27 V/dec, and hysteresis of 0.21 V, which are superior to that of TFTs fabricated on an Al2O3 single-layer buffer (IB TFT). From the X-ray photoelectron spectroscopy and elastic recoil detection analysis, the difference in the electrical performance of TFTs could be explained by hydrogen-related molecules. After annealing at 270 °C, the amounts of hydrogen found in the a-IGZO layer for the IB, HB, and OB TFTs were 3.57 × 1021, 5.77 × 1021, and 7.34 × 1021 atoms/cm3, respectively. A top-gate bottom-contact structured a-IGZO TFT fabricated on the PA layer (OB TFT) showed a gate dielectric breakdown because of excessively high hydrogen content and high nonbonding oxygen content. On the other hand, HB TFTs showed better positive bias stability because of the higher hydrogen concentration, as hydrogen (when not excessive) is beneficial in passivating electron traps. Finally, we conducted 60,000 repetitive bending cycles on IB TFTs and HB TFTs with various bending radii down to 1.5 mm. The HB TFT shows improved mechanical durability and exhibits less electrical degradation during and after repetitive bending stress, compared to the IB TFT.

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.

To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film (front-channel layer), a conventional a-IGZO film (buried-channel layer), and a nitrogen-doped a-IGZO film (back-channel layer). The larger field-effect mobility (5.8 cm2V-1s-1), the smaller subthreshold swing value (0.8 V/dec, and the better stability (smaller threshold voltage shifts during bias-stress and light illumination tests) were obtained for the buried-channel device relative to the conventional a-IGZO TFT. The specially designed channel-layer structure resulted in multiple conduction channels and hence large field-effect mobility. The in situ nitrogen-doping caused reductions in both the front-channel interface trap density and the density of deep states in the bulk channel layers, leading to a small subthreshold swing value. The better stability properties may be related to both the reduced trap states by nitrogen-doping and the passivation effect of the nitrogen-doped a-IGZO films at the device back channels.

High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric.

Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O2 plasma-enhanced atomic layer deposition Al2O3 dielectrics at different temperatures. High-performance a-IGZO TFTs are demonstrated successfully with an Al2O3 dielectric deposited at room temperature, which exhibit a high field-effect mobility of 19.5 cm2 V- 1 s- 1, a small subthreshold swing of 160 mV/dec, a low threshold voltage of 0.1 V, a large on/off current ratio of 4.5 × 108, and superior negative and positive gate bias stabilities. This is attributed to the hydrogen-rich Al2O3 dielectric deposited at room temperature in comparison with higher deposition temperatures, thus efficiently passivating the interfacial states of a-IGZO/Al2O3 and the oxygen vacancies and improving conductivity of the a-IGZO channel by generating additional electrons because of enhanced hydrogen doping during sputtering of IGZO. Such an extremely low thermal budget for high-performance a-IGZO TFTs is very attractive for flexible electronic application.

Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors.

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).

Hydroxyl radical and thermal annealing on amorphous InGaZnO4 films for DNA immobilizations.

The effect of hydroxyl radicals (OH) and thermal annealing on an amorphous InGaZnO4 (aIGZO) film surface was investigated for manipulation of DNA immobilization. X-ray photoemission and fluorescence measurements were conducted to reveal the status of surface OH coverage and DNA immobilization, respectively. Systematic examinations concerning OH termination on the film surface suggested that the surface coverage of OH leveling DNA immobilization was related to the local surface potential. Furthermore, OH affinity on the aIGZO film surface was sensitive to thermal annealing. A remarkable change in surface OH coverage was observed for the film surface annealed at high temperature. This behavior was framed by a structural change from amorphous to crystalline state, which regulated DNA immobilization. These results indicate that the OH affinity on aIGZO films is dependent on structural properties such as defects. This study suggests that an amorphous structure is critical for obtaining a high OH surface coverage governing DNA immobilization, and is hence more suitable for biosensing.

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors.

Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for the drift motion of oxygen vacancies. We show that oxygen vacancies, which are initially ionized by trapping photoexcited hole carriers, can easily migrate under an external electric field. Thus, accumulated hole traps near the channel/dielectric interface cause negative shift of the threshold voltage, supporting the oxygen vacancy model. In addition, we find that ionized oxygen vacancies easily recover their neutral defect configurations by capturing electrons when the Fermi level increases. Our results are in good agreement with the experimental observation that applying a positive gate bias pulse of short duration eliminates hole traps and thus leads to the recovery of device stability from persistent photoconductivity.