Study on the Aging Characteristics of a ±500 kV Composite Dead-End Insulator in Longtime Service.

Composite insulators have been widely used in power grids due to their excellent electrical-external-insulation performance. Long-term operation at high voltage levels accelerates the aging of composite insulators; however, there is a scarcity of research on aged composite insulators operating at 500 kV for over ten years. In this paper, the mechanical, electrical, and microscopic properties were tested on different sheds along a 500 kV composite insulator that had been running for 18 years. Additionally, the results were compared with a new insulator and the standards for live insulator operation. The results showed that the aging of the high-voltage end of composite insulators was the most serious. The results of the physical properties test indicated that the insulator's hardness was compliant but its tensile strength and break elongation did not meet standards. Under wet conditions, the pollution flashover voltage decreases by about 50% compared to the new insulator. Combined with the microscopic test results, the shed skeleton structure could be damaged and the filler might be lost during the aging process of polydimethylsiloxane (PDMS). The hardness of the insulator would increase by the precipitation of inorganic silicon; however, inorganic silicon might destroy the hydrophobicity and other properties of insulator sheds. These results can provide theoretical references for insulator life prediction and operation protection.

Additional kinetic energy harvesting with extra electrodes by single electrode droplet-based electricity generator (SE-DEG).

The utilization of water energy through the Single Electrode Droplet-Based Electricity Generator (SE-DEG) represents a universal and high-efficiency method for water energy harvesting. Previous research has extensively elucidated the working principle of SE-DEG based on bulk effect. However, scant attention has been paid to the investigation of the electrical characteristics surrounding the SE-DEG. Remarkably, the electrical characteristics around the SE-DEG can be exploited to generate electricity and harvest corresponding energy. Here we evaluate the electrical characteristics around the SE-DEG by arranging extra electrodes. An interesting phenomenon is found that, on the premise of no contact between extra electrodes and the droplet, there is opposite electricity output from extra electrodes synchronously when the droplet contacts on the PTFE film and SE-DEG electrode and outputs the electricity. This phenomenon is comprehensively explained and verified from working mechanism, the impacts of different arrangements and the array design of extra electrodes. Significantly, utilizing the electrical characteristics could harvest additional kinetic energy with extra electrodes in SE-DEG. This investigation is expected to provide new insights into the future harnessing of water kinetic energy within the SE-DEG framework.

Electrical Characteristics of 3D Trench Electrode Germanium Detector with Nested Complementary Cathodes.

High-purity germanium detectors, widely employed in fields such as aerospace applications based on radiation detection principles, have garnered attention due to their broad detection range and fast response time. However, these detectors often require larger sensitive area volumes to achieve larger signals and higher detection efficiency. Additionally, the large distance between the electrodes contributes to an issue of incomplete charge collection, which significantly restricts their application in space applications. To enhance the electrical performance of high-purity germanium detectors, this study introduces a strategy: designing the detector's cathode electrode into a 3D trench shape with nested complementary cathodes. This design greatly reduces the electrode spacing, endowing the detector with superior electrical characteristics, such as a smaller dead zone and improved charge collection efficiency. Performance simulations of the novel detector structure were conducted using the semiconductor device simulation software Sentaurus TCAD (2019.03). The simulation results confirmed that the nested complementary 3D trench electrode high-purity germanium detector exhibits excellent electrical features, including a larger sensitive area volume, rapid charge collection, and good cell isolations. This approach has the potential to effectively expand the application scenarios of high-purity germanium detectors. Depending on different operational environments and requirements, nested complementary 3D trench electrode high-purity germanium detectors of appropriate structural dimensions can be chosen. The experimental findings of this study hold a significant reference value for enhancing the overall structure of high purity germanium detectors and facilitating their practical application in the future.

Detection of Interleukin-6 Protein Using Graphene Field-Effect Transistor.

Universal platforms to analyze biomolecules using sensor devices can address critical diagnostic challenges. Sensor devices like electrical-based field-effect transistors play an essential role in sensing biomolecules by charge probing. Graphene-based devices are more suitable for these applications. It has been previously reported that Graphene Field-Effect Transistor (GFET) devices detect DNA hybridization, pH sensors, and protein molecules. Graphene became a promising material for electrical-based field-effect transistor devices in sensing biomarkers, including biomolecules and proteins. In the last decade, FET devices have detected biomolecules such as DNA molecules, pH, glucose, and protein. These studies have suggested that the reference electrode is placed externally and measures the transfer characteristics. However, the external probing method damages the samples, requiring safety measurements and a substantial amount of time. To control this problem, the graphene field-effect transistor (GFET) device is fabricated with an inbuilt gate that acts as a reference electrode to measure the biomolecules. Herein, the monolayer graphene is exfoliated, and the GFET is designed with an in-built gate to detect the Interleukin-6 (IL-6) protein. IL-6 is a multifunctional cytokine which plays a significant role in immune regulation and metabolism. Additionally, IL-6 subsidizes a variability of disease states, including many types of cancer development, and metastasis, progression, and increased levels of IL-6 are associated with a higher risk of cancer and can also serve as a prognostic marker for cancer. Here, the protein is desiccated on the GFET device and measured, and Dirac point shifting in the transfer characteristics systematically evaluates the device's performance. Our work yielded a conductive and electrical response with the IL-6 protein. This graphene-based transducer with an inbuilt gate gives a promising platform to enable low-cost, compact, facile, real-time, and sensitive amperometric sensors to detect IL-6. Targeting this pathway may help develop treatments for several other symptoms, such as neuromyelitis optica, uveitis, and, more recently, COVID-19 pneumonia.

Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices.

The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-oxide-semiconductor (CMOS) fabrication processes. Silicon oxide is also obtained through the low-temperature chemical vapor deposition method. It is revealed that the as-fabricated devices do not require electroforming but their resistance state cannot be stored before thermal treatment. After the thermal treatment, the devices exhibit bipolar-type resistive switching with synaptic behavior. The conduction mechanisms in the device stack are associated with the effect of traps in the insulator, which form filaments in the places where the electric field is concentrated. The filaments shortcut the capacitance of the stack to different degrees in the high-resistance state (HRS) and in the low-resistance state (LRS). As a result, the electron transport possesses an activation nature with relatively low values of activation energy in an HRS. On the contrary, Ohm's law and tunneling are observed in an LRS. CMOS-compatible materials and low-temperature fabrication techniques enable the easy integration of the studied resistive-switching devices with traditional analog-digital circuits to implement new-generation hardware neuromorphic systems.

Resulting Effect of the p-Type of ZnTe: Cu Thin Films of the Intermediate Layer in Heterojunction Solar Cells: Structural, Optical, and Electrical Characteristics.

The microstructural, electrical, and optical properties of Cu-doped and undoped ZnTe thin films grown on glass substrates are covered in this article. To determine the chemical makeup of these materials, both energy-dispersive X-ray (EDAX) spectroscopy and X-ray photoelectron spectroscopy were employed. The cubic zinc-blende crystal structure of ZnTe and Cu-doped ZnTe films was discovered using X-ray diffraction crystallography. According to these microstructural studies, the average crystallite size increased as the amount of Cu doping increased, whereas the microstrain decreased as the crystallinity increased; hence, defects were minimized. The Swanepoel method was used to compute the refractive index, and it was found that the refractive index rises as the Cu doping levels rises. The optical band gap energy was observed to decrease from 2.225 eV to 1.941 eV as the Cu content rose from 0% to 8%, and then slightly increase to 1.965 eV at a Cu concentration of 10%. The Burstein-Moss effect may be connected to this observation. The larger grain size, which lessens the dispersion of the grain boundary, was thought to be the cause of the observed increase in the dc electrical conductivity with an increase in Cu doping. In structured undoped and Cu-doped ZnTe films, there were two carrier transport conduction mechanisms that could be seen. According to the Hall Effect measurements, all the grown films exhibited a p-type conduction behavior. In addition, the findings demonstrated that as the Cu doping level rises, the carrier concentration and the Hall mobility similarly rise, reaching an ideal Cu concentration of 8 at.%, which is due to the fact that the grain size decreases grain boundary scattering. Furthermore, we examined the impact of the ZnTe and ZnTe:Cu (at Cu 8 at.%) layers on the efficiency of the CdS/CdTe solar cells.

Dyssynchrony and Response to Cardiac Resynchronization Therapy in Heart Failure Patients With Unfavorable Electrical Characteristics.

BACKGROUND: Among heart failure (HF) patients undergoing cardiac resynchronization therapy (CRT), those with unfavorable electrical characteristics (UEC) are less frequently CRT responders. OBJECTIVES: In this study, the authors sought to evaluate the relationship between preprocedural echocardiographic parameters of electromechanical dyssynchrony (EMD) and outcome following CRT. METHODS: Among 551 patients receiving CRT, 121 with UEC, defined as atypical left bundle branch, presence of right bundle branch block, or unspecified intraventricular conduction disturbance, were enrolled. Indices of EMD were presence of septal flash, apical rocking, septal deformation patterns, and global wasted work (GWW), determined with the use of speckle-tracking strain echocardiography. Endpoints were response to CRT, defined as a relative decrease in left ventricular end-systolic volume ≥15% at 9-month postoperative follow-up, and all-cause death or HF hospitalization during follow-up. RESULTS: Among the 121 patients, 68 (56%) were CRT responders. In multivariate analysis, GWW ≥200 mm Hg% (adjusted odds ratio [aOR]: 4.17 [95% CI: 1.33-14.56]; P = 0.0182) and longitudinal strain septal contraction patterns 1 and 2 (aOR: 10.05 [95% CI: 2.82-43.97]; P < 0.001) were associated with CRT response. During a 46-month follow-up (IQR: 42-55 months), survival free from death or HF hospitalization increased with the number of positive criteria (87% for 2, 59% for 1, and 27% for 0). After adjustment for established predictors of outcome in patients receiving CRT, absence of either of the 2 criteria remained associated with a considerable increased risk of death and/or HF hospitalization (adjusted HR: 4.83 [95% CI: 1.84-12.68]; P = 0.001). CONCLUSIONS: In patients with UEC, echocardiographic assessment of EMD may help to select patients who will derive benefit from CRT. (Echocardiography in Cardiac Resynchronization Therapy [Echo-CRT]; NCT02986633).

Optimization of Polyolefin-Bonded Hydroxyapatite Graphite for Sustainable Industrial Applications.

As a means of introducing environmental responsibility to industrial applications, the usage of biobased composite materials has been encouraged in recent years. Polymer nanocomposites utilize polyolefins increasingly as a matrix, owing to the diversity in their features and prospective applications, even though typical polyester blend materials, such as glass and composite materials, have garnered greater attention from researchers. The mineral hydroxy-apatite, or Ca10(PO4)6(OH)2, is the primary structural component of bone and tooth enamel. Increased bone density and strength result from this procedure. As a result, nanohms are fabricated from eggshells into rods with very tiny particle sizes. Although there have been many papers written on the benefits of HA-loaded polyolefins, the reinforcing effect of HA at low loadings has not yet been taken into account. The purpose of this work was to examine the mechanical and thermal characteristics of polyolefin-HA nanocomposites. These nanocomposites were built out of HDPE and LDPE (LDPE). As an extension of this work, we investigated what would happen when HA is added to LDPE composites at concentrations as high as 40% by weight. Carbonaceous fillers, including graphene, carbon nanotubes, carbon fibers, and exfoliated graphite, all play significant roles in nanotechnology owing to the extraordinary enhancements in their thermal, electrical, mechanical, and chemical properties. The purpose of this study was to examine the effects of adding a layered filler, such as exfoliated graphite (EG), to microwave zones that might have real-world applications for their mechanical, thermal, and electrical characteristics. Mechanical and thermal properties were significantly enhanced by the incorporation of HA, notwithstanding a minor decrease in these attributes at a loading of 40% HA by weight. A higher load-bearing capability of LLDPE matrices suggests their potential usage in biological contexts.

The Influence of Oxidation on the Magnetic, Electrical, and Mechanical Properties of Co40Fe40Yb20 Films.

A typical body-centered cubic (BCC) CoFe(110) peak was discovered at approximately 2θ = 44.7°. At 2θ = 46°, 46.3°, 47.7°, 55.4°, 54.6°, and 56.4°, the Yb2O3 and Co2O3 oxide peaks were visible in all samples. However, with a heat treatment temperature of 300 °C, there was no typical peak of CoFe(110). Electrical characteristics demonstrated that resistivity and sheet resistance reduced dramatically as film thickness and annealing temperatures increased. At various heat treatments, the maximum hardness was 10 nm. The average hardness decreased as the thickness increased, and the hardness trend decreased slightly as the annealing temperature was higher. The highest low-frequency alternative-current magnetic susceptibility (χac) value was discovered after being annealed at 200 °C with 50 nm, and the optimal resonance frequency (fres) was discovered to be within the low-frequency range, indicating that the Co40Fe40Yb20 film can be used in low-frequency applications. The maximum saturation magnetization (Ms) was annealed at 200 °C for 50 nm. Thermal disturbance caused the Ms to decrease as the temperature reached to 300 °C. The results show that when the oxidation influence of as-deposited and thinner films is stronger than annealing treatments and thicker thickness, the magnetic and electrical properties can be enhanced by the weakening peak of the oxide, which can also reduce interference.

A Plasma Transmitting Source for Borehole Acoustic Reflection Imaging.

The detection depth of current borehole acoustic reflection imaging is only tens of meters without high resolution. This considerably limits its wide application in the identification and fine description of unconventional reservoirs and in the optimization of drilling trajectories. Increasing the directional energy from the transmitter to a geological structure is an excellent way to solve this issue. In this study, a plasma source with a parabolic reflector was introduced during borehole acoustic reflection imaging. First, an experimental system was built for testing the plasma source. Next, the acoustic-electrical characteristics and directional radiation of the source were studied using experiments and a numerical simulation. Finally, the advantages, disadvantages, and feasibility of the plasma-transmitting source were analyzed; some suggestions for further work on the source and its logging application were proposed. The experimental and simulation results show that the use of a plasma source with a parabolic reflector can increase the detection depth of borehole acoustic reflection imaging to hundreds of meters with high resolution. This is crucial in imaging the geological structures near boreholes and enhancing oil-gas exploration and development.

An Investigation of the Effect of the Work-Function Variation of a Monolithic 3D Inverter Stacked with MOSFETs.

The effect of the work-function variation (WFV) of metal-oxide-semiconductor field-effect transistor (MOSFET) gates on a monolithic 3D inverter (M3DINV) structure is investigated in the current paper. The M3DINV has a structure in which MOSFETs are sequentially stacked. The WFV effect of the top- and bottom-tier gates on the M3DINV is investigated using technology computer-aided design (TCAD) and a Monte-Carlo sampling simulation of TCAD. When the interlayer dielectric thickness (TILD) changes from 5 to 100 nm, electrical parameters, such as the threshold voltage, subthreshold swing, on-current, and off-current of the top-tier N-MOSFET and the parameter changes by the change in gate voltage of the bottom-tier P-MOSFET, are investigated. As TILD decreases below about 30 nm, the means and standard deviations of the electrical parameters rapidly increase. This means that the coupling and its distribution are relatively large in the regime and thus should be well considered for M3D circuit simulation. In addition, due to the increase in standard deviation, the WFV effect of both the top- and bottom-tier MOSFET gates was observed to be greater than those of only the top-tier MOSFET gates and only the bottom-tier MOSFET gates.

Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors.

Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc-tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with increased annealing time. Due to the increased SR, the ratio of oxygen vacancies (VO) increased from 21.5% to 38.2%. According to increased VO, the mobility in the saturation region was exhibited by a sixfold increase from 0.38 to 2.41 cm2 V-1 s-1. In addition, we found that the threshold voltage negatively shifted from 3.08 to -0.95 V. Regarding the issue of bias stability, according to increased SR, positive-bias stress of the ZTO TFTs was enhanced, compared with reverse features of negative-bias stress. Our understanding is expected to provide a basic way to improve the electrical characteristics and bias stability of rare-metal-free oxide semiconductor TFTs, which have not been sufficiently studied.

Tolerance effect of a shock-free atmospheric plasma on human skin.

In this work, a shock-free argon-fed plasma plume was generated by a variable-frequency power supply and the discharge characteristics were investigated from the voltage and current waveforms between 72 and 92 kHz frequencies. The higher electron temperature dominates the plasma chemical process and the average plasma temperature is about 30 â„ƒ under these conditions. The influence of non-thermal atmospheric plasma plume length and plume temperature on Ar gas flow is optimized at 7 sL/min. The average charge accumulation on the plume tip area and the dependence of flow rate on the plasma irradiation area were also explored. This atmospheric pressure plasma jet (APPJ) has been proposed for human-skin irradiation on different areas (even on the tongue) owing to its less painful, tingling and burning effect. Optical emission spectroscopy (OES) confirmed the presence of excited argon with reactive nitrogen (RNS) and oxygen species (ROS). This study contributes to a better understanding of non-thermal plasma effects on the human body which may find prospects for disinfection and prevention of different diseases during the current pandemic time. Supplementary Information: The online version contains supplementary material available at 10.1007/s00339-022-06022-w.

Physicochemical characteristics of droplet interface bilayers.

Droplet interface bilayer (DIB) is a lipid bilayer formed when two lipid monolayer-coated aqueous droplets are brought in contact within an oil phase. DIBs, especially post functionalization, are a facile model system to study the biophysics of the cell membrane. Continued advances in enhancing and functionalizing DIBs to be a faithful cell membrane mimetic requires a deep understanding of the physicochemical characteristics of droplet interface bilayers. In this review, we provide a comprehensive overview of the current scientific understanding of DIB characteristics starting with the key experimental frameworks for DIB generation, visualization and functionalization. Subsequently we report experimentally measured physical, electrical and transport characteristics of DIBs across physiologically relevant lipids. Advances in simulations and mathematical modelling of DIBs are also discussed, with an emphasis on revealing principles governing the key physicochemical characteristics. Finally, we conclude the review with important outstanding questions in the field.

Comparison of electrical characteristics and pacing parameters of pacing different parts of the His-Purkinje system in bradycardia patients.

PURPOSE: We aimed to evaluate the electrical characteristics and pacing parameters at different locations of His-Purkinje system pacing. METHODS: Patients who successfully underwent His-Purkinje system pacing with bradycardia indications from April 2018 to August 2019 were retrospectively analyzed according to the lead location confirmed by visualization of the tricuspid value annulus, postoperative echocardiography, and pacing electrocardiogram. The electrical characteristics and pacing parameters were compared among these patients. RESULTS: A total of 135 patients were retrospectively analyzed. Among them, 30 patients received atrial side HBP (aHBP group), 52 received ventricular side HBP (vHBP group), and 53 received left bundle branch pacing (LBBP group). The proportion of non-selective pacing was significantly lower in aHBP group (30.0%) than in vHBP (75.0%) and LBBP group (90.6%). LBBP had significantly shorter procedural and fluoroscopic duration than aHBP and vHBP. The capture threshold was significantly higher (1.07 ± 0.26 V/1.0 ms vs. 0.89 ± 0.22 V/1.0 ms vs. 0.77 ± 0.18 V/0.4 ms, P < 0.01, respectively), and the R-wave amplitude was significantly lower (3.71 ± 1.72 mV vs. 5.81 ± 2.37 mV vs. 10.27 ± 4.71 mV, P < 0.05 respectively) in aHBP group than those in the other two groups at implantation and during 3-month follow-up. No significant differences were observed in complications among groups during 3-month follow-up. CONCLUSION: VHBP and LBBP had better pacing performances than aHBP and might be more ideal pacing methods for bradycardia patients.

Multifunctional and smart Er2O3-ZnO nanocomposites for electronic ceramic varistors and visible light degradation of wastewater treatment.

In this proposed study, erbium (Er3+)-doped ZnO nanocomposites were prepared through the effective, basic, and green combustion method. The significant effects of Er dopants on the structural, morphological features, dielectric, and optical behaviors of the pure ZnO matrix as well as Er2O3-ZnO nanostructured materials were investigated applying X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformation infrared (FT-IR) spectroscopy, and UV-Vis spectrophotometer techniques. These results showed that the synthesized Er2O3-ZnO nanocomposites are well polycrystalline. The Er2O3-ZnO nanocomposites are almost uniformly distributed on the surface morphologies. Furthermore, UV-Vis diffuse reflectance spectroscopy, AC electrical conductivity, and dielectric properties' current-voltage characteristics were utilized to examine the influence of erbium doping on the optical properties, energy bandgaps of the proposed Er2O3-ZnO nanostructured powder. The tested nano-samples were applied for the visible light photodegradation of p-chlorophenol(4-CP) and p-nitrophenol (4-NP). The Er-doped ZnO ratio affects the photocatalytic activity of the ZnO matrix. This current research substantiated that more than 99.5% of 4-CP and 4-NP were photodegraded through 30 min of irradiation. Four times, the Er:ZnO nanocatalysts were used and still displayed an efficiency of more than 96.5% for 4-CP and 4-NP degradations in the specified period of 30 min. The as-prepared Er2O3-ZnO nanostructures are considered novel potential candidates in broad nano-applications from visible photocatalytic degradation of waste pollutants to the electronic varistor devices.

Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors.

InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (tITO, respectively, 6, 9, 12, and 15 nm) on device performance and positive bias stress (PBS) stability of the ITO TFTs are examined. We found that content of oxygen defects positively correlates with tITO, leading to increases of both trap states as well as carrier concentration and synthetically determining electrical properties of the ITO TFTs. Interestingly, the ITO TFTs with a tITO of 9 nm exhibit the best performance and PBS stability, and typical electrical properties include a field-effect mobility (µFE) of 37.69 cm2/Vs, a Von of -2.3 V, a SS of 167.49 mV/decade, and an on-off current ratio over 107. This work paves the way for practical application of the ITO TFTs.

Electrical impedance spectroscopy (EIS) in plant roots research: a review.

Nondestructive testing of plant roots is a hot topic in recent years. The traditional measurement process is time-consuming and laborious, and it is impossible to analyze the state of plant roots without destroying the sample. Recent studies have shown that as an excellent nondestructive measurement method, although electrical impedance spectroscopy (EIS) has made great achievements in many botanical research fields such as plant morphology and stress resistance, there are still limitations. This review summarizes the application of EIS in plant root measurement. The experiment scheme, instrument and electrode, excitation frequency range, root electrical characteristics, equivalent circuit, and combination of EIS and artificial intelligence (AI) are discussed. Furthermore, the review suggests that future research should focus on miniaturization of measurement equipment, standardization of planting environment and intelligentization of root diagnosis, so as to better apply EIS technology to in situ root nondestructive measurement.