Numerical and Experiment Analysis of Sapphire Sandwich-Structure Fabry-Perot Pressure Sensor through Fast Fourier Transform and Mean Square Error Demodulation Algorithm.

Pressure sensors prepared from sapphire exhibit excellent characteristics, including high-temperature resistance, high hardness, and resistance to electromagnetic interference. A Fast Fourier Transform and Mean Square Error (FFT-MSE) demodulation algorithm was employed to demodulate a sapphire sandwich-structure Fabry-Perot (F-P) pressure sensor. Through simulation analysis, the experimental results indicated that the demodulation error of the air cavity length in the range of 206 µm to 216 µm was less than 0.0008%. Compared to single demodulation methods and combined demodulation methods based on FFT or Minimum Mean Square Error (MMSE), the method proposed in this work reduced the demodulation error by more than three times and increased accuracy by more than six times. The algorithm was utilized to demodulate the sapphire sandwich-structure F-P pressure sensor, and the test results indicated that the fitting error of the sensor was less than 0.025% within the pressure range of 0 MPa to 10 MPa. The repeatability error was less than 0.066%, the zero-point deviation was 1.26%, and the maximum stability deviation was 0.0063% per 30 min. The algorithm effectively demodulated the actual cavity length variation in the sapphire sandwich-structure F-P pressure sensor, providing a solution for the performance evaluation of the sapphire sandwich-structure F-P pressure sensor.

Modeling of Material Removal Rate for the Fixed-Abrasive Double-Sided Planetary Grinding of a Sapphire Substrate.

Double-sided planetary grinding (DSPG) with a fixed abrasive is widely used in sapphire substrate processing. Compared with conventional free abrasive grinding, it has the advantages of high precision, high efficiency, and environmental protection. In this study, we propose a material removal rate (MRR) model specific to the fixed-abrasive DSPG process for sapphire substrates, grounded in the trajectory length of abrasive particles. In this paper, the material removal rate model is obtained after focusing on the theoretical analysis of the effective number of abrasive grains, the indentation depth of a single abrasive grain, the length of the abrasive grain trajectory, and the groove repetition rate. To validate this model, experiments were conducted on sapphire substrates using a DSPG machine. Theoretical predictions of the material removal rate were then juxtaposed with experimental outcomes across varying grinding pressures and rotational speeds. The trends between theoretical and experimental values showed remarkable consistency, with deviations ranging between 0.2% and 39.2%, thereby substantiating the model's validity. Moreover, leveraging the insights from this model, we optimized the disparity in the material removal rate between two surfaces of the substrate, thereby enhancing the uniformity of the machining process across both surfaces.

Specially Structured AgCuTi Foil Enables High-Strength and Defect-Free Brazing of Sapphire and Ti6Al4V Alloys: The Microstructure and Fracture Characteristics.

A novel AgCuTi brazing foil with a unique microstructure was developed, which could achieve strong vacuum brazing of Ti6Al4V (TC4) and sapphire. The brazing foil was composed of Ag solid solution (Ag(s,s)), Cu solid solution (Cu(s,s)), and layered Ti-rich phases, and had a low liquidus temperature of 790 °C and a narrow melting range of 16 °C, facilitating the defect-free joining of TC4 and sapphire. The sapphire/TC4 joint fabricated by using this novel AgCuTi brazing foil exhibited an outstanding average shear strength of up to 132.2 MPa, which was the highest value ever reported. The sapphire/TC4 joint had a characteristic structure, featuring a brazing seam reinforced by TiCu particles and a thin Ti3(Cu,Al)3O reaction layer of about 1.3 µm. The fracture mechanism of the sapphire/TC4 joint was revealed. The crack originated at the brazing seam with TiCu particles, then propagated through the Ti3(Cu,Al)3O reaction layer, detached the reaction layer from the sapphire, and finally penetrated into the sapphire. This study offers valuable insights into the design of active brazing alloys and reliable metal-ceramic bonding.

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals.

Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer-scale single-crystal films. Both step-edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic-edge guided epitaxy and van der Waals epitaxy. Low-concentration sulfur condition preserves O/Al-terminated step edges, fostering atomic-edge epitaxy, while high-concentration sulfur leads to S-terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic-level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single-crystal 2D materials on a wafer scale.

Advanced Mechanical Transfer of Micro-LEDs Enabled by Structurally Modified Wide Sapphire Nanomembranes through Thermal Reflow of Photoresist.

Micro light-emitting diodes (micro-LEDs) are pivotal in next-generation display technologies, driven by the need for high pixel density. This study introduces a novel methodology utilizing wide sapphire nanomembranes (W-SNM) as a dual-purpose template for high-quality epitaxial growth and the mechanical lift-off of individual micro-LEDs. Micro-LEDs grow individually on W-SNM, obviating the chip singulation process. By employing mechanical fracturing of the thin W-SNM, our method facilitates the transfer of micro-LEDs without the conventional laser lift-off (LLO) process. Previously introduced sapphire nanomembranes (SNM) have shown promise in enhancing epitaxial layer quality; however, they encountered challenges in managing micro-LED size variation and achieving efficient mechanical transfer. Here, we apply simple yet effective adjustments to the SNM structure, specifically, its elevation and widening. This strategic modification allows micro-LEDs to endure applied forces without incurring cracks or defects, ensuring that only the targeted W-SNM are selectively fractured. The mechanically transferred vertical 15 × 15 µm2 micro-LED device operates at an optimal turn-on voltage of 3.3 V. Finite element simulations validate the mechanical strain distribution between the W-SNM and GaN when pressure is applied, confirming the efficacy of our design approach. This pioneering methodology offers a streamlined, efficient pathway for the production and mechanical transfer of micro-LEDs, presenting new avenues for their integration into next-generation, high-performance displays.

Optical Sensing of Tissue Freezing Depth by Sapphire Cryo-Applicator and Steady-State Diffuse Reflectance Analysis.

This work describes a sapphire cryo-applicator with the ability to sense tissue freezing depth during cryosurgery by illumination of tissue and analyzing diffuse optical signals in a steady-state regime. The applicator was manufactured by the crystal growth technique and has several spatially resolved internal channels for accommodating optical fibers. The method of reconstructing freezing depth proposed in this work requires one illumination and two detection channels. The analysis of the detected intensities yields the estimation of the time evolution of the effective attenuation coefficient, which is compared with the theoretically calculated values obtained for a number of combinations of tissue parameters. The experimental test of the proposed applicator and approach for freezing depth reconstruction was performed using gelatin-based tissue phantom and rat liver tissue in vivo. It revealed the ability to estimate depth up to 8 mm. The in vivo study confirmed the feasibility of the applicator to sense the freezing depth of living tissues despite the possible diversity of their optical parameters. The results justify the potential of the described design of a sapphire instrument for cryosurgery.

Long-Range Atomic Order on Double-Stepped Al2O3(0001) Surfaces.

The deterministic preparation of highly ordered single-crystalline surfaces is a key step for studying and utilizing the physical properties of various advanced materials. This paper presents the fast and straightforward preparation of vicinal Al2O3(0001) surfaces with micrometer-scale atomic order. Crisp electron-diffraction spots up to at least 20th order evidence atomic coherence on terraces with widths exceeding 1 µm. The unique combination of three properties of Al2O3(0001) underlie this remarkable coherence: its high-temperature stability; the differences in the ionic bonding systems of the surface as compared to the bulk; and the fact that the terraces are non-polar whereas the step edges have a polar character. The step edges are furthermore found to have alternating configurations, which drive a step-doubling transition. On double-stepped surfaces, the Al-rich ( 31 × 31 ) R ± 9 $(\sqrt {31}\times \sqrt {31})\textrm {R}\pm 9$ ° surface reconstruction attains a singular in-plane orientation. These results set a benchmark for high-quality surface preparation and thus expand the scope for both fundamental studies on and the technological utilization of exciting material systems.

A Novel Approach for Colloidal Lithography: From Dry Particle Assembly to High-Throughput Nanofabrication.

We introduce a novel approach for colloidal lithography based on the dry particle assembly into a dense monolayer on an elastomer, followed by mechanical transfer to a substrate of any material and curvature. This method can be implemented either manually or automatically and it produces large area patterns with the quality obtained by the state-of-the-art colloidal lithography at a very high throughput. We first demonstrated the fabrication of nanopatterns with a periodicity ranging between 200 nm and 2 µm. We then demonstrated two nanotechnological applications of this approach. The first one is antireflective structures, fabricated on silicon and sapphire, with different geometries including arrays of bumps and holes and adjusted for different spectral ranges. The second one is smart 3D nanostructures for mechanostimulation of T cells that are used for their effective proliferation, with potential application in cancer immunotherapy. This new approach unleashes the potential of bottom-up nanofabrication and paves the way for nanoscale devices and systems in numerous applications.

Label-free and highly-sensitive detection of calcium ions using a silicon-on-sapphire light-addressable potentiometric sensor.

BACKGROUND: Ionic calcium (Ca2+) plays a crucial role in maintaining normal physiological and biochemical functions within the human body. Detecting the concentration of Ca2+ is of utmost significance for various purposes, including disease screening, cellular metabolism research, and evaluating drug effectiveness. However, current detection approaches such as fluorescence and colorimetry face limitations due to complex labeling techniques and the inability to track changes in Ca2+ concentration. In recent years, extensive research has been conducted in this field to explore label-free and efficient approaches. RESULTS: In this study, a novel light-addressed potentiometric sensor (LAPS) using silicon-on-sapphire technology, has been successfully developed for Ca2+ sensing. The Ca2+-sensitive LAPS achieved a wide-range detection of Ca2+, ranging from 10-2 M to 10-7 M, with an impressive detection limit of 100 nM. These advancements are attributed to the ultra-thin silicon layer, silicon dioxide layer, and solid-state silicon rubber sensitive membrane around 6 µm. Furthermore, the sensor demonstrated the ability to dynamically monitor fluctuations in Ca2+ concentration ranging from 10-9 M to 10-2 M within a solution. Its remarkable selectivity, specificity, and long-term stability have facilitated its successful application in the detection of Ca2+ in human serum and urine. SIGNIFICANCE AND NOVELTY: This work presents a Ca2+-sensitive sensor that combines a low detection limit and a wide detection range. The development represents the emergence of a label-free and rapid Ca2+ detection tool with immense prospects in home-based health monitoring, community disease screening, as well as cellular metabolism, and drug screening evaluations.

Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface.

Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield a single-crystalline MoS2 monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS2 monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial symmetry and commensurability of sapphire terraces rather than the sapphire step inclination ultimately govern the MoS2 crystal orientation. Strikingly, as the MoS2 crystals continue to grow laterally, the sapphire steps transform the MoS2 crystal geometry into diamond-shaped domains presumably by anisotropic diffusion of ad-species and facet development. Even though these MoS2 domains nucleate on sapphire with predominantly bimodal 0 and 60° azimuthal rotation, the individual domains reach lateral dimensions of up to 200 nm before merging seamlessly into a single-crystalline MoS2 monolayer upon coalescence. Plan-view transmission electron microscopy reveals the single-crystalline nature across 50 µm by 50 µm inspection areas. As a result, the median carrier mobility of MoS2 monolayers peaks at 25 cm2 V-1 s-1 with the highest value reaching 28 cm2 V-1 s-1. This work details synthesis-structure correlations and the possibilities to tune the structure and material properties through substrate topography toward various applications in nanoelectronics, catalysis, and nanotechnology. Moreover, shape modulation through anisotropic growth phenomena on stepped surfaces can provide opportunities for nanopatterning for a wide range of materials.

Impact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide.

Although the synthesis of molybdenum disulfide (MoS2) on sapphire has made a lot of progress, how the substrate surface affects the growth still needs to be further studied. Herein, the impact of the sapphire step height on the growth of monolayer MoS2 through chemical vapor deposition (CVD) is studied. The results show that MoS2 exhibits a highly oriented triangular grain on a low-step (0.44-1.54 nm) substrate but nanoribbons with a consistent orientation on a high-step (1.98-3.30 nm) substrate. Triangular grains exhibit cross-step growth, with one edge parallel to the step edge, while nanoribbons do not cross steps and possess the same orientation as the step. Scanning electron microscopy (SEM) reveals that nanoribbons are formed by splicing multiple grains, and the consistency of the orientation of these grains is demonstrated with a transmission electron microscope (TEM) and second-harmonic generation (SHG). Furthermore, our CP2K calculations, conducted using the generalized gradient approximation and the Perdew-Burke-Ernzerhof (PBE) functional with D3 (BJ) correction, show that MoS2 domains prefer to nucleate at higher steps, while climbing across a higher step is more difficult. This work not only sheds light on the growth mechanism of monolayer MoS2 but also promotes its applications in electrical, optical, and energy-related devices.

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.

In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm-2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics.

Large-Area Mapping of Voids and Dislocations in Basal-Faceted Sapphire Ribbons by Synchrotron Radiation Imaging.

The understanding of structural defects in basal-faceted sapphire ribbons was improved through X-ray imaging at a synchrotron source. The combination of phase contrast and X-ray diffraction makes it possible to visualize and characterize both gas voids and dislocations in the bulk of the ribbons grown by the Stepanov-LaBelle technology. Dislocations were directly related to gas voids. X-ray diffraction topography was employed to investigate the distribution, configurations, and character of the dislocations. The formation of voids of irregular shapes was detected by large-area mapping with spatial resolution in the µm range. Computer simulations of the experimental phase contrast images of microvoids were performed. The sizes of the spherical microvoids were determined. The results are discussed with reference to the available data on the emission of dislocations from the voids. The evolution of the shape, size, and arrangement of the voids during growth provides clues on the formation of block structure in basal-faceted sapphire ribbons.

Research on the Preparation and Application of Fixed-Abrasive Tools Based on Solid-Phase Reactions for Sapphire Wafer Lapping and Polishing.

Single-crystal sapphire specimen (α-Al2O3) have been widely applied in the semiconductor industry, microelectronics, and so on. In order to shorten the production time and improve the processing efficiency of sapphire processing, an integrated fixed-abrasive tool (FAT) based on solid-phase reactions is proposed in this article. The optimal FAT composition is determined using a preliminary experiment and orthogonal experiments. The mass fraction of the abrasives is chosen as 55 wt%, and the mass ratio of SiO2/Cr2O3 is 2. Surface roughness Ra decreased from 580.4 ± 52.7 nm to 8.1 ± 0.7 nm after 150 min, and the average material removal rate was 14.3 ± 1.2 nm/min using the prepared FAT. Furthermore, FAT processing combined with chemical mechanical polishing (CMP) was shortened by 1.5 h compared to the traditional sapphire production process in obtaining undamaged sapphire surfaces with a roughness of Ra < 0.4 nm, which may have the potential to take the place of the fine lapping and rough polishing process.

Effect of Template-Mediated Alumina Nanoparticle Morphology on Sapphire Wafer Production via Heat Exchange Method.

The sapphire crystal, the most commonly used LED substrate material, has excellent optical and chemical properties and has rapidly developed in recent years. However, the challenge of growing large-size sapphire crystals remains. This paper presents a novel approach using alumina nanoparticles synthesized with abietic acid as a template to enhance sapphire growth via the heat exchange method. This study explores the effects of temperature, time, and template amount on the structure and morphology of the synthesized alumina nanoparticles. The results show that the morphology of the raw material, particularly spherical alumina nanoparticles, positively affects the quality and yield stability of sapphire products. Furthermore, the light output power of GaN-based LED chips made with the experimentally fabricated sapphire substrate increased from 3.47 W/µm2 to 3.71 W/µm2, a 6.9% increase compared to commercially available sapphire substrates. This research highlights the potential of using abietic acid as a template for alumina nanoparticle synthesis and their application in sapphire growth for LED production.

The Mean Inner Potential of Hematite α-Fe2O3 Across the Morin Transition.

We measure the mean inner potential (MIP) of hematite, α-Fe2O3, using electron holography and transmission electron microscopy. Since the MIP is sensitive to valence electrons, we propose its use as a chemical bonding parameter for solids. Hematite can test the sensitivity of the MIP as a bonding parameter because of the Morin magnetic phase transition. Across this transition temperature, no change in the corundum crystal structure can be distinguished, while a change in hybridized Fe-3d and O-2p states was reported, affecting ionic bonding. For a given crystallographic phase, the change in the MIP with temperature is expected to be minor due to thermal expansion. Indeed, we measure the temperature dependence in corundum α-Al2O3(112¯0) between 95 and 295 K showing a constant MIP value of ∼16.8 V within the measurement accuracy of 0.45 V. Thus, our objectives are as follows: measure the MIP of hematite as a function of temperature and examine the sensitivity of the MIP as a bonding parameter for crystals. Measured MIPs of α-Fe2O3(112¯0) above the Morin transition are equal, 17.85 ± 0.50 V, 17.93 ± 0.50 V, at 295 K, 230 K, respectively. Below the Morin transition, at 95 K, a significant reduction of ∼1.3 V is measured to 16.56 ± 0.46 V. We show that this reduction follows charge redistribution resulting in increased ionic bonding.

Adsorption of Ferritin at Nanofaceted Al2O3 Surfaces.

The influence of nanoscale surface topography on protein adsorption is highly important for numerous applications in medicine and technology. Herein, ferritin adsorption at flat and nanofaceted, single-crystalline Al2O3 surfaces is investigated using atomic force microscopy and X-ray photoelectron spectroscopy. The nanofaceted surfaces are generated by the thermal annealing of Al2O3 wafers at temperatures above 1000 °C, which leads to the formation of faceted saw-tooth-like surface topographies with periodicities of about 160 nm and amplitudes of about 15 nm. Ferritin adsorption at these nanofaceted surfaces is notably suppressed compared to the flat surface at a concentration of 10 mg/mL, which is attributed to lower adsorption affinities of the newly formed facets. Consequently, adsorption is restricted mostly to the pattern grooves, where the proteins can maximize their contact area with the surface. However, this effect depends on the protein concentration, with an inverse trend being observed at 30 mg/mL. Furthermore, different ferritin adsorption behavior is observed at topographically similar nanofacet patterns fabricated at different annealing temperatures and attributed to different step and kink densities. These results demonstrate that while protein adsorption at solid surfaces can be notably affected by nanofacet patterns, fine-tuning protein adsorption in this way requires the precise control of facet properties.

High-Temperature Fiber-Optic Fabry-Perot Vibration Sensor Based on Single-Crystal Sapphire.

In this paper, a fiber-optic Fabry-Perot (F-P) vibration sensor that can work at 800 °C is proposed. The F-P interferometer is composed of an upper surface of inertial mass placed parallel to the end face of the optical fiber. The sensor was prepared by ultraviolet-laser ablation and three-layer direct-bonding technology. Theoretically, the sensor has a sensitivity of 0.883 nm/g and a resonant frequency of 20.911 kHz. The experimental results show that the sensitivity of the sensor is 0.876 nm/g in the range of 2 g to 20 g at an operating frequency of 200 Hz at 20 °C. The nonlinearity was evaluated from 20 °C to 800 °C with a nonlinear error of 0.87%. In addition, the z-axis sensitivity of the sensor was 25 times higher than that of the x-axis and y-axis. The vibration sensor will have wide high-temperature engineering-application prospects.