Lorentz Force-Actuated Bidirectional Nanoelectromechanical Switch with an Ultralow Operation Voltage.

The high operating voltage of conventional nanoelectromechanical switches, typically tens of volts, is much higher than the driving voltage of the complementary metal oxide semiconductor integrated circuit (∼1 V). Though the operating voltage can be reduced by adopting a narrow air gap, down to several nanometers, this leads to formidable manufacturing challenges and occasionally irreversible switch failures due to the surface adhesive force. Here, we demonstrate a new nanowire-morphed nanoelectromechanical (NW-NEM) switch structure with ultralow operation voltages. In contrast to conventional nanoelectromechanical switches actuated by unidirectional electrostatic attraction, the NW-NEM switch is bidirectionally driven by Lorentz force to allow the use of a large air gap for excellent electrical isolation, while achieving a record-low driving voltage of <0.2 V. Furthermore, the introduction of the Lorentz force allows the NW-NEM switch to effectively overcome the adhesion force to recover to the turn-off state.

"Surface-Like Growth" Strategy for the Direct Synthesis of Horizontally Aligned Boron Nitride Nanotubes.

The inherent properties of boron nitride nanotubes (BNNTs) can be further enhanced through the control of their anisotropy. In particular, horizontally aligned BNNTs (HABNNTs) exhibit considerable potential for various applications. However, directly synthesizing HABNNTs is difficult owing to the random floating of BNNTs and the absence of directional forces. Here, we employed a simple, efficient, and universal "surface-like growth" strategy to synthesize high-density and high-quality HABNNTs in the W2B5/Zn precursor system. First, the floating range of BNNTs was restricted to the vicinity of the precursor, and then, directional forces were applied to induce BNNT directional growth along the substrate surface. Experiments and simulations confirmed that the HABNNT orientation could be controlled through manipulation of the directional forces. Furthermore, the strategy was employed for HABNNTs synthesis using the MoB2/Zn, further demonstrating the universality of the approach. Overall, this work offers a fresh perspective on the synthesis of HABNNTs, further expanding their potential applications.

Zincblende InAsxP1-x/InP Quantum Dot Nanowires for Telecom Wavelength Emission.

InAsxP1-x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate the growth of pure zincblende InAsxP1-x QDs in InP NWs, which enabled an increase in NW diameters to about 45 nm, achieved by employing Au-assisted vapor liquid solid growth in a chemical beam epitaxy system. We studied the growth of InP/InAsxP1-x heterostructures with different compositions to control the straight growth along the ⟨100⟩ direction and to tune the emission wavelength. Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAsxP1-x alloy QDs. This allowed us to optimize different growth protocols to achieve straight growth of the final QD NWs. We successfully obtained the growth of InAsxP1-x QDs with a composition in the range of x = 0.24-1.00. By means of microphotoluminescence measurements, we demonstrate the tunability of the emission in dependence of the InAsxP1-x QD composition and morphology, remarkably observing an emission at the telecom O-band for a 10 nm thick QD with 80% of As content.

Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio.

Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy. By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform.

Computational approaches for mechanobiology in cardiovascular development and diseases.

The cardiovascular development in vertebrates evolves in response to genetic and mechanical cues. The dynamic interplay among mechanics, cell biology, and anatomy continually shapes the hydraulic networks, characterized by complex, non-linear changes in anatomical structure and blood flow dynamics. To better understand this interplay, a diverse set of molecular and computational tools has been used to comprehensively study cardiovascular mechanobiology. With the continual advancement of computational capacity and numerical techniques, cardiovascular simulation is increasingly vital in both basic science research for understanding developmental mechanisms and disease etiologies, as well as in clinical studies aimed at enhancing treatment outcomes. This review provides an overview of computational cardiovascular modeling. Beginning with the fundamental concepts of computational cardiovascular modeling, it navigates through the applications of computational modeling in investigating mechanobiology during cardiac development. Second, the article illustrates the utility of computational hemodynamic modeling in the context of treatment planning for congenital heart diseases. It then delves into the predictive potential of computational models for elucidating tissue growth and remodeling processes. In closing, we outline prevailing challenges and future prospects, underscoring the transformative impact of computational cardiovascular modeling in reshaping cardiovascular science and clinical practice.

Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy.

(In, Ga) alloy droplets are used to catalyse the growth of (In, Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In, Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) flux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In, Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms.

Brain Metastases from Breast Cancer Histologically Exhibit Solid Growth Pattern with at Least Focal Comedonecrosis: A Histopathologic Study on a Monocentric Series of 30 Cases.

Since there are no morphological clues capable of making a pathologist suspect a possible mammary origin of a metastatic lesion without adequate clinical information, the histologic diagnosis of brain metastasis from BC is still based on the immunohistochemical expression of mammary gland markers such as GATA-3, ERs, PgRs and HER-2. The present retrospective study aimed to select purely morphological features capable of suggesting the mammary origin of a metastatic carcinoma in the brain. The following histological features were collected from a series of 30 cases of brain metastases from breast cancer: (i) a solid growth pattern; (ii) the presence of comedonecrosis; and (iii) glandular differentiation. Our results showed that most cases histologically exhibited a solid growth pattern with at least focal comedonecrosis, producing an overall morphology closely reminiscent of mammary high-grade ductal carcinoma in situ. Although the above-mentioned morphological parameters are not strictly specific to a mammary origin, they may have an important diagnostic utility for leading pathologists to suspect a possible breast primary tumor and to include GATA-3, ERs, PgRs and HER-2 in the immunohistochemical panel.

Composition of Vapor-Liquid-Solid III-V Ternary Nanowires Based on Group-III Intermix.

Compositional control in III-V ternary nanowires grown by the vapor-liquid-solid method is essential for bandgap engineering and the design of functional nanowire nano-heterostructures. Herein, we present rather general theoretical considerations and derive explicit forms of the stationary vapor-solid and liquid-solid distributions of vapor-liquid-solid III-V ternary nanowires based on group-III intermix. It is shown that the vapor-solid distribution of such nanowires is kinetically controlled, while the liquid-solid distribution is in equilibrium or nucleation-limited. For a more technologically important vapor-solid distribution connecting nanowire composition with vapor composition, the kinetic suppression of miscibility gaps at a growth temperature is possible, while miscibility gaps (and generally strong non-linearity of the compositional curves) always remain in the equilibrium liquid-solid distribution. We analyze the available experimental data on the compositions of the vapor-liquid-solid AlxGa1-xAs, InxGa1-xAs, InxGa1-xP, and InxGa1-xN nanowires, which are very well described within the model. Overall, the developed approach circumvents uncertainty in choosing the relevant compositional model (close-to-equilibrium or kinetic), eliminates unknown parameters in the vapor-solid distribution of vapor-liquid-solid nanowires based on group-III intermix, and should be useful for the precise compositional tuning of such nanowires.

Thermodynamically Driven Tilt Grain Boundaries of Monolayer Crystals Using Catalytic Liquid Alloys.

We report a method to precisely control the atomic defects at grain boundaries (GBs) of monolayer MoS2 by vapor-liquid-solid (VLS) growth using sodium molybdate liquid alloys, which serve as growth catalysts to guide the formations of the thermodynamically most stable GB structure. The Mo-rich chemical environment of the alloys results in Mo-polar 5|7 defects with a yield exceeding 95%. The photoluminescence (PL) intensity of VLS-grown polycrystalline MoS2 films markedly exceeds that of the films, exhibiting abundant S 5|7 defects, which are kinetically driven by vapor-solid-solid growths. Density functional theory calculations indicate that the enhanced PL intensity is due to the suppression of nonradiative recombination of charged excitons with donor-type defects of adsorbed Na elements on S 5|7 defects. Catalytic liquid alloys can aid in determining a type of atomic defect even in various polycrystalline 2D films, which accordingly provides a technical clue to engineer their properties.

Vapor-Liquid-Solid Growth of Site-Controlled Monolayer MoS2 Films Via Pressure-Induc ed Supercritical Phase Nucleation.

In this study, a novel pressure-induced supercritical phase nucleation method is proposed to synthesize monolayer MoS2 films, which is promoter free and can avoid contamination of films derived from these heterogeneous promoters in most of the existing techniques. The low-crystallinity and size-controlled MoO2(acac)2 particles are recrystallized on the substrate via the pressure-sensitive solvent capacity of supercritical CO2 and these particles are used as growth sites. The size of single-crystal MoS2 on the substrate is found to be dependent on the wetting area of the pyrolyzed precursor droplets (MoO2) on the surface, and the formation of continuous films with high coverage is mainly controlled by the coalescence of MoO2 droplets. It is enhanced by the increase of the nucleation site density, which can be adjusted by the supersaturation of the supercritical fluid solution. Our findings pave a new way for the controllable growth of MoS2 and other two-dimensional materials and provide sufficient and valuable evidence for vapor-liquid-solid growth.

Self-Catalytic Ternary Compounds for Efficient Synthesis of High-Quality Boron Nitride Nanotubes.

The large-scale synthesis of high-quality boron nitride nanotubes (BNNTs) has attracted considerable interests due to their applications in nanocomposites, thermal management, and so on. Despite decades of development, efficient preparation of high-quality BNNTs, which relies on the effective design of precursors and catalysts and deep insights into the catalytic mechanisms, is still urgently needed. Here, a self-catalytic process is designed to grow high-quality BNNTs using ternary W-B-Li compounds. W-B-Li compounds provide boron source and catalyst for BNNTs growth. High-quality BNNTs are successfully obtained via this approach. Density functional theory-based molecular dynamics (DFT-MD) simulations demonstrate that the Li intercalation into the lattice of W2 B5 promotes the formation of W-B-Li liquid and facilitates the compound evaporation for efficient BNNTs growth. This work demonstrates a high-efficient self-catalytic growth of high-quality BNNTs via ternary W-B-Li compounds, providing a new understanding of high-quality BNNTs growth.

Vapor-Liquid-Solid Growth of Morphology-Tailorable WS2 toward P-Type Monolayer Field-Effect Transistors.

Although substantial efforts have been made, controllable synthesis of p-type WS2 remains a challenge. In this work, we employ NaCl as a seeding promoter to realize vapor-liquid-solid (VLS) growth of p-type WS2. Morphological evolution, including a one-dimensional (1D) nanowire to two-dimensional (2D) planar domain and 2D shape transition of WS2 domains, can be well-controlled by the growth temperature and sulfur introduction time. A high growth temperature is required to enable planar growth of 2D WS2, and a sulfur-rich environment is found to facilitate the growth of high-quality WS2. Raman and photoluminescence (PL) mappings demonstrate uniform crystallinity and high quantum efficiency of VLS-grown WS2. Moreover, monolayer WS2-based field-effect transistors (FETs) are fabricated, showing p-type conducting behavior, which is different from previous reported n-type FETs from WS2 grown by other methods. First-principles calculations show that the p-type behavior originates from the substitution of Na at the W site, which will form an additional acceptor level above the valence band maximum (VBM). This facile VLS growth method opens the avenue to realize the p-n WS2 homojunctions and p/n-WS2-based heterojunctions for monolayer wearable electronic, photonic, optoelectronic, and biosensing devices and should also be a great benefit to the development of 2D complementary metal-oxide-semiconductor (CMOS) circuit applications.

In vivo development of tissue engineered vascular grafts: a fluid-solid-growth model.

Methods of tissue engineering continue to advance, and multiple clinical trials are underway evaluating tissue engineered vascular grafts (TEVGs). Whereas initial concerns focused on suture retention and burst pressure, there is now a pressing need to design grafts to have optimal performance, including an ability to grow and remodel in response to changing hemodynamic loads. Toward this end, there is similarly a need for computational methods that can describe and predict the evolution of TEVG geometry, composition, and material properties while accounting for changes in hemodynamics. Although the ultimate goal is a fluid-solid-growth (FSG) model incorporating fully 3D growth and remodeling and 3D hemodynamics, lower fidelity models having high computational efficiency promise to play important roles, especially in the design of candidate grafts. We introduce here an efficient FSG model of in vivo development of a TEVG based on two simplifying concepts: mechanobiologically equilibrated growth and remodeling of the graft and an embedded control volume analysis of the hemodynamics. Illustrative simulations for a model Fontan conduit reveal the utility of this approach, which promises to be particularly useful in initial design considerations involving formal methods of optimization which otherwise add considerably to the computational expense.

1D Germanium Sulfide van der Waals Bicrystals by Vapor-Liquid-Solid Growth.

Defects in two-dimensional and layered materials have attracted interest for realizing properties different from those of perfect crystals. Even stronger links between defect formation, fast growth, and emerging functionality can be found in nanostructures of van der Waals crystals, but only a few prevalent morphologies and defect-controlled synthesis processes have been identified. Here, we show that in vapor-liquid-solid growth of 1D van der Waals nanostructures, the catalyst controls the selection of the predominant (fast-growing) morphologies. Growth of layered GeS over Bi catalysts leads to two coexisting nanostructure types: chiral nanowires carrying axial screw dislocations and bicrystal nanoribbons where a central twin plane facilitates rapid growth. While Au catalysts produce exclusively dislocated nanowires, their modification with an additive triggers a switch to twinned bicrystal ribbons. Nanoscale spectroscopy shows that, while supporting fast growth, the twin defects in the distinctive layered bicrystals are electronically benign and free of nonradiative recombination centers.

Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires.

Uniform growth of ultrathin silicon nanowire (SiNW) channels is the key to accomplishing reliable integration of various SiNW-based electronics, but remains a formidable challenge for catalytic synthesis, largely due to the lack of uniform size control of the leading metallic droplets. In this work, we explored a nanostripe-confined approach to produce highly uniform indium (In) catalyst droplets that enabled the uniform growth of an orderly SiNW array via an in-plane solid-liquid-solid (IPSLS) guided growth directed by simple step edges. It was found that the size dispersion of the In droplets could be reduced substantially from Dcatpl = 20 ± 96 nm on a planar surface to only Dcatns = 88 ± 13 nm when the width of the In nanostripe was narrowed to Wstr= 100 nm, which could be qualitatively explained in a confined diffusion and nucleation model. The improved droplet uniformity was then translated into a more uniform growth of ultrathin SiNWs, with diameter of only Dnw= 28 ± 4 nm, which has not been reported for single-edge guided IPSLS growth. These results lay a solid basis for the construction of advanced SiNW-derived field-effect transistors, sensors and display applications.

Organic Crystal Growth: Directly from Amorphous Solid Powder to Single Crystals.

Preparation of organic crystals mainly depends on solution-deposition, sublimation, and melt-deposition techniques. Solid-state growth methods are generally not suitable for organic crystal growth due to the unprocurable mass transfer. Herein, we report two pyridine-substituted fluorenone compounds with extraordinary crystal-growth capacity, and these compounds can directly and quickly form single crystals from their amorphous solid powder by heating under antisolvent-assistance conditions. The novel experimental phenomenon and crystal growth mechanism were investigated in depth. The results indicate that multiple intermolecular hydrogen-bonding sites and planar aromatic structure (prone to π-π interactions) of these molecules dominate the mass transfer during crystal growth by providing enough energy. This discovery enhances our knowledge of solid-state methods for single-crystal growth.

Dynamics of Monolayer Growth in Vapor-Liquid-Solid GaAs Nanowires Based on Surface Energy Minimization.

The vapor-liquid-solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor-liquid-solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

Optoelectronics and Nanophotonics of Vapor-Liquid-Solid Grown GaSe van der Waals Nanoribbons.

2D/layered semiconductors are of interest for fundamental studies and for applications in optoelectronics and photonics. Work to date focused on extended crystals, produced by exfoliation or growth and investigated by diffraction-limited spectroscopy. Processes such as vapor-liquid-solid (VLS) growth carry potential for mass-producing nanostructured van der Waals semiconductors with exceptionally high crystal quality and optoelectronic/photonic properties at least on par with those of extended flakes. Here, we demonstrate the synthesis, structure, morphology, and optoelectronics/photonics of GaSe van der Waals nanoribbons obtained by Au- and Ag-catalyzed VLS growth. Although all GaSe ribbons are high-quality basal-plane oriented single crystals, those grown at lower temperatures stand out with their remarkably uniform morphology and low edge roughness. Photoluminescence spectroscopy shows intense, narrow light emission at the GaSe bandgap energy. Nanophotonic experiments demonstrate traveling waveguide modes at visible/near-infrared energies and illustrate approaches for locally exciting and probing such photonic modes by cathodoluminescence in transmission electron microscopy.

The Mechanism of Graphene Vapor-Solid Growth on Insulating Substrates.

Wafer-scale single-crystal graphene film directly grown on insulating substrates via the chemical vapor deposition (CVD) method is desired for building high-performance graphene-based devices. In comparison with the well-studied mechanism of graphene growth on transition metal substrates, the lack of understanding on the mechanism of graphene growth on insulating surfaces greatly hinders the progress. Here, by using first-principles calculation, we systematically explored the absorption of various carbon species CHx (x = 0, 1, 2, 3, 4) on three typical insulating substrates [h-BN, sapphire, and quartz] and reveal that graphene growth on an insulating surface is dominated by the reaction of active carbon species with the hydrogen-passivated graphene edges and thus is less sensitive to the type of the substrate. The dominating gas phase precursor, CH3, plays two key roles in graphene CVD growth on an insulating substrate: (i) to feed the graphene growth and (ii) to remove excessive hydrogen atoms from the edge of graphene. The threshold reaction barriers for the growth of graphene armchair (AC) and zigzag (ZZ) edges were calculated as 3.00 and 1.94 eV, respectively; thus the ZZ edge grows faster than the AC one. Our theory successfully explained why the circumference of a graphene island grown on insulating substrates is generally dominated by AC edges, which is a long-standing puzzle of graphene growth. In addition, the very slow graphene growth rate on an insulating substrate is calculated and agrees well with existing experimental observations. The comprehensive insights on the graphene growth on insulating surfaces at the atomic scale provide guidance on the experimental design for high-quality graphene growth on insulating substrates.

Superfast Growth Dynamics of High-Quality Silicon Nanowires on Polymer Films via Self-Selected Laser-Droplet-Heating.

Growing high quality silicon nanowires (SiNWs) at elevated temperature on cooler polymer films seems to be contradictive but highly desirable for building high performance flexible and wearable electronics. In this work, we demonstrate a superfast (vnw > 3.5 µm·s-1) growth of high quality SiNWs on polymer/glass substrates, powered by self-selected laser at 808 nm heating of indium catalyst droplets that absorb amorphous Si layer to produce SiNWs. Because of the tiny heat capacity of the nanodroplets, the SiNW growth can be quickly heated up and frozen via rapid laser ON/OFF switching, enabling a deterministic diameter modulation in the ultralong SiNWs. Finally, prototype field effect transistors are also fabricated upon the laser-droplet-heating grown SiNWs with a high Ion/Ioff ratio of >104 and reasonable subthreshold swing of 386 mV·dec-1, opening a generic new route to integrate high-quality NW channels directly upon large area and lightweight polymer substrates for developing high-performance flexible electronics.