Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces.

Monolayer Ge2Sb2Te5exhibits great potential in non-volatile memory technology due to its excellent electronic properties and phase-change characteristics, while the fundamental nature of Ge2Sb2Te5-metal contacts has not been well understood yet. Here, we provide a comprehensiveab initiostudy of the electronic properties between monolayer Ge2Sb2Te5and Pt, Pd, Au, Cu, Cr, Ag, and W contacts based on first-principles calculations. We find that the strong interaction interfaces formed between monolayer Ge2Sb2Te5and Pt, Pd, Cr, and W contacts show chemical bonding and strong charge transfer. In contrast, no apparent chemical bonding and weak charge transfer are observed in the weak interaction interfaces formed with Au, Cu, and Ag. Additionally, our study reveals the presence of a pronounced Fermi level pinning effect between monolayer Ge2Sb2Te5and metals, with pinning factors ofSn=0.325andSp=0.350. By increasing the interlayer distance, an effective transition fromn-type Ohmic contact ton-type Schottky contact is facilitated because the band edge of Ge2Sb2Te5is shifted upwards. Our study not only provides a theoretical basis for selecting suitable metal electrodes in Ge2Sb2Te5-based devices but also holds significant implications for understanding Schottky barrier height modulation between semiconductors and metals.

A High-Rate and Ultrastable Re2Te5/MXene Anode for Potassium Storage Enabled by Amorphous/Crystalline Heterointerface Engineering.

The pursuit of anode materials capable of rapid and reversible potassium storage performance is a challenging yet fascinating target. Herein, a heterointerface engineering strategy is proposed to prepare a novel superstructure composed of amorphous/crystalline Re2Te5 anchored on MXene substrate (A/C-Re2Te5/MXene) as an advanced anode for potassium-ion batteries (KIBs). The A/C-Re2Te5/MXene anode exhibits outstanding reversible capacity (350.4 mAh g-1 after 200 cycles at 0.2 A g-1), excellent rate capability (162.5 mAh g-1 at 20 A g-1), remarkable long-term cycling capability (186.1 mAh g-1 at 5 A g-1 over 5000 cycles), and reliable operation in flexible full KIBs, outperforming state-of-the-art metal chalcogenides-based devices. Experimental and theoretical investigations attribute this high performance to the synergistic effect of the A/C-Re2Te5 with a built-in electric field and the elastic MXene, enabling improved pseudocapacitive contribution, accelerated charge transfer behavior, and high K+ ion adsorption/diffusion ability. Meanwhile, a combination of intercalation and conversion reactions mechanism is observed within A/C-Re2Te5/MXene. This work offers a new approach for developing metal tellurides- and MXene-based anodes for achieving stable cyclability and fast-charging KIBs.

Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties.

Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron-phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.

Rapid Synthesis of Sb2Si2Te6 under High Pressure with a Modulated Microstructure.

Over the past decades, thermoelectric materials have advanced significantly, yet materials such as Sb2Si2Te6, which are challenging to synthesize chemically, often require lengthy and complex preparation processes, hindering their development. In this work, we prepare polycrystalline Sb2Si2Te6 bulk from elemental precursors using a high-pressure synthesis (HPS) method. This method offers significant advantages in efficiency and preparation duration. The applied pressure promotes an isotropic microstructure and regulates the thermoelectric properties by controlling precipitate contents, grain size, and twinning. Although an increase in thermal conductivity, mostly due to the notable increase in electrical conductivity, leads to less favorable thermal conductivity near room temperature compared to samples prepared using conventional methods, a beneficial reversal occurs at high temperatures. The polycrystalline Sb2Si2Te6 sample synthesized at 2 GPa demonstrates a peak ZT value of 1.1 at 773 K, outperforming most pristine Sb2Si2Te6 materials. This work demonstrates an efficient strategy for optimizing Sb2Si2Te6 performance and offers a new synthesis pathway for other challenging thermoelectric materials.

Enhanced Thermoelectric Performance of p-type AgSbTe2 via Cu Doping.

Recently, the p-type semiconductor AgSbTe2 has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300-700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag2Te impurities. Herein, we synthesized AgSb1-xCuxTe2 (x = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe2. Our results indicate that Cu doping suppresses the Ag2Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag2Te impurities and the phonon softening of the AgSb1-xCuxTe2. Overall, Cu doping improves the ZT of AgSb1-xCuxTe2. Among all samples, AgSb0.96Cu0.04Te2 has a maximum ZT of ∼1.45 at 498 K and an average ZT of ∼1.11 from 298 to 573 K.

Preserflo MicroShunt versus Trabeculectomy: Efficacy and Surgical Success within a Heterogenous Patient Cohort.

To compare success rates of trabeculectomy (TE) and Preserflo MicroShunt (PMS) in heterogenous glaucoma cohorts with regards to different pre- and postoperative therapeutic regimens. Data of 187 glaucoma patients who either received TE (73 eyes) or PMS implantation (114 eyes) between January 2018 and December 2022 were retrospectively evaluated. Surgical success and failure rates were analyzed within six months of follow-up. Intraocular pressure (IOP) development over the course of follow-up was compared between both groups. Tertiary outcome measures were best-corrected visual acuity (BCVA), number and type of medications, frequency of postoperative complications and revision surgeries. Outcome measures underwent additional assessment based on subgroup categorizations, and failure time hazard ratios were computed. The success rates were comparable between both procedures (TE: 54.1%, PMS: 60.0%; p = 0.17). Both procedures showed significant IOP reduction (p < 0.01); however, overall IOP reduction was greater in the TE group than in the PMS group (TE: Reduction by 12 mmHg (188.9%), PMS: Reduction by 7 mmHg (51.3%); p = 0.01). The number of topical medications decreased significantly in both groups over the course of follow-up (TE: 4 to 0, PMS: 3 to 0; p < 0.01). While the number of complications and revision surgeries were similar in both groups, the time interval until the first revision surgery within the TE group was significantly shorter (TE: 13.5 d, PMS: 163 d; p = 0.01) than within the PMS group. No difference could be detected between TE and PMS with regard to the follow-up regimen. In particular, there was no significant difference in the need for 5-floururacil injections postoperatively (p = 0.29). Less invasive glaucoma surgery with the PMS appeared comparable to the TE within a heterogenous glaucoma cohort with regards to IOP development and freedom from medication.

Comparative Analysis of Transposable Elements in the Genomes of Citrus and Citrus-Related Genera.

Transposable elements (TEs) significantly contribute to the evolution and diversity of plant genomes. In this study, we explored the roles of TEs in the genomes of Citrus and Citrus-related genera by constructing a pan-genome TE library from 20 published genomes of Citrus and Citrus-related accessions. Our results revealed an increase in TE content and the number of TE types compared to the original annotations, as well as a decrease in the content of unclassified TEs. The average length of TEs per assembly was approximately 194.23 Mb, representing 41.76% (Murraya paniculata) to 64.76% (Citrus gilletiana) of the genomes, with a mean value of 56.95%. A significant positive correlation was found between genome size and both the number of TE types and TE content. Consistent with the difference in mean whole-genome size (39.83 Mb) between Citrus and Citrus-related genera, Citrus genomes contained an average of 34.36 Mb more TE sequences than Citrus-related genomes. Analysis of the estimated insertion time and half-life of long terminal repeat retrotransposons (LTR-RTs) suggested that TE removal was not the primary factor contributing to the differences among genomes. These findings collectively indicate that TEs are the primary determinants of genome size and play a major role in shaping genome structures. Principal coordinate analysis (PCoA) of Gene Ontology (GO) and Kyoto Encyclopedia of Genes and Genomes (KEGG) identifiers revealed that the fragmented TEs were predominantly derived from ancestral genomes, while intact TEs were crucial in the recent evolutionary diversification of Citrus. Moreover, the presence or absence of intact TEs near the AdhE superfamily was closely associated with the bitterness trait in the Citrus species. Overall, this study enhances TE annotation in Citrus and Citrus-related genomes and provides valuable data for future genetic breeding and agronomic trait research in Citrus.

The impact of varying EDTA dosage on the flower-like morphology and thermoelectric properties of Ce-doped Bi2Te3.

Thermoelectric materials have significant applications in energy utilization and environmental protection. The effect of different EDTA (ethylenediaminetetraacetic acid) dosages on the flower-like morphology and thermoelectric properties of Ce-doped Bi2Te3 nanoparticles were investigated. The Ce-doped Bi2Te3 nanoparticles were sucessfully prepared via the hydrothermal method, and the influence of EDTA dosage on the morphology, structure, and thermoelectric properties of the materials was analyzed. The experimental results showed that an appropriate amount of EDTA can promote the formation of a flower-like morphology in Ce-doped Bi2Te3 nanomaterials and enhance their thermoelectric properties. The ZT values of the x = 0.15 sample made by the better flower-like morphology of nanopowders are all around 1, which reach 1.15 at 398 K. This work demonstrates the synergistic effects of combining nanostructure engineering and chemical doping strategies for thermoelectric performance enhancement.

Comparison of the imaging performance of time-of-flight MRA and ultrashort echo time MRA in flow diverters: A phantom study.

OBJECTIVE: Flow diverters (FD) are innovative treatments for wide-neck intracranial aneurysms. After-treatment verification of embolization and parent vessel patency is crucial. While evaluation using time-of-flight magnetic resonance angiography (TOF-MRA) is useful, it suffers from signal loss within the FD due to susceptibility effects. This study evaluates the usefulness of ultrashort echo time MRA (UTE-MRA) for after-FD assessment compared to TOF-MRA. METHODS: Vascular phantom experiments were conducted using FDs (FRED®, Pipeline®, Surpass Streamline®). TOF-MRA and UTE-MRA were performed under steady (10, 30, 50 cm/s) and pulsatile (17-61 cm/s, mean 34 cm/s) flow conditions using a 3 T MRI system. As evaluation metrics, relative in-FD signal (RIS) was calculated by comparing the signal intensity inside the FD to that without the FD to assess signal retention, and FD luminal to background signal ratio (FD-LBR) was calculated by comparing the signal intensity inside the FD to that of the surrounding background to evaluate vessel visibility. RESULTS: UTE-MRA showed higher FD-LBR values than TOF-MRA for all FDs (p < 0.01). For RIS, UTE-MRA was significantly higher for FRED® (p < 0.01), but different for other FDs except at 50 cm/s. FRED® exhibited the highest RIS and FD-LBR values under all conditions, followed by Pipeline® and Surpass Streamline®. Flow velocity changes resulted in minimal variations in RIS and FD-LBR values. CONCLUSION: UTE-MRA provides superior image quality for after-FD assessment, particularly in terms of FD-LBR, compared to TOF-MRA. Differences in FD materials and structures affect image quality. These findings suggest UTE-MRA's clinical utility in follow-up after-FD assessment.

Enhanced High-Temperature Thermoelectric Performance in Te-Doped Electronegative Element-Filled Skutterudites via Suppressing Bipolar Effects and Enhanced Phonon Scattering.

CoSb3-based skutterudites have great potential as midtemperature thermoelectric (TE) materials due to their low cost and excellent electrical and mechanical properties. Their application, however, is limited by the high thermal conductivity and the degradation of TE performance at elevated temperatures, attributed to the adverse effects of bipolar diffusion. Herein, a series of SeyCo4Sb12-xTex compounds were successfully synthesized by combining a solid-state reaction and spark plasma sintering techniques to mitigate these challenges. It was found that doping Te at the Sb sites effectively enhanced the carrier concentration and suppressed the bipolar effect to obtain a superior power factor of ∼43 µW cm-1 K-2. Furthermore, due to the low resonant frequency of Se, filling voids of CoSb3 with Se achieved a low lattice thermal conductivity of 1.55 W m-1 K-1. Nevertheless, Se filling introduced additional holes, reducing the carrier concentration without a significant detriment of the carrier mobility. As a result, a maximum figure of merit of 1.23 was achieved for Se0.1Co4Sb11.55Te0.45 at 773 K. This work provides a valuable guidance for selecting appropriate filling and doping components to achieve synergistic optimization of the acoustics and electronics of CoSb3-based skutterudites.

TexSe1-x Shortwave Infrared Photodiode Arrays with Monolithic Integration.

TexSe1-x shortwave infrared (SWIR) photodetectors show promise for monolithic integration with readout integrated circuits (ROIC), making it a potential alternative to conventional expensive SWIR photodetectors. However, challenges such as a high dark current density and insufficient detection performance hinder their application in large-scale monolithic integration. Herein, we develop a ZnO/TexSe1-x heterojunction photodiode and synergistically address the interfacial elemental diffusion and dangling bonds via inserting a well-selected 0.3 nm amorphous TeO2 interfacial layer. The optimized device achieves a reduced dark current density of -3.5 × 10-5 A cm-2 at -10 mV, a broad response from 300 to 1700 nm, a room-temperature detectivity exceeding 2.03 × 1011 Jones, and a 3 dB bandwidth of 173 kHz. Furthermore, for the first time, we monolithically integrate the TexSe1-x photodiodes on ROIC (64 × 64 pixels) with the largest-scale array among all TexSe1-x-based detectors. Finally, we demonstrate its applications in transmission imaging and substance identification.

Picosecond Ultrasonics in Magnetic Topological Insulator MnBi2Te4.

MnBi2Te4 is a magnetic topological insulator with layered A-type antiferromagnetic order. It exhibits a rich layer- and magnetic-state dependent topological phase diagram; however, much about the coupling between spin, charge, and lattice remains to be explored. In this work, we report that MnBi2Te4 is an excellent acoustic phonon cavity by realizing phonon frequency combs using picosecond ultrasonics. With the generated acoustic phonon wavepackets, we demonstrate that the timing and phase of acoustic echoes can be used to detect the presence of stacking faults between van der Waals layers buried deep within the crystal. Furthermore, by implementing this nondestructive ultrafast optical measurement in conjunction with time-resolved magneto-optical Kerr effect experiments, we uncover that out-of-plane vibrations in MnBi2Te4 do not couple to the magnetic order, i.e. there is no appreciable magnetostriction. Our work points out how a well-developed technique can probe the structural defects and phonon pulse engineering in layered topological insulators.

Enhancing Thermoelectric and Cooling Performance of Bi0.5Sb1.5Te3 through Ferroelectric Polarization in Flexible Ag/PZT/PVDF/Bi0.5Sb1.5Te3 Film.

Bi2Te3-based thin films are gaining recognition for their remarkable room temperature thermoelectric performance. Beyond the conventional "process-composition-performance" paradigm, it is highly desirable to explore new methods to enhance their performance further. Here, we designed a sandwich-structured Ag/PZT/PVDF/Bi0.5Sb1.5Te3(BST) thin film device and effectively regulated the performance of the BST film by controlling the polarization state of the PZT/PVDF layers. Results indicate that polarization induces interlayer charge redistribution and charge transfer between PZT/PVDF and BST, thereby achieving the continuous modulation of the electrical transport characteristics of BST films. Finally, following polarization at a saturation voltage of 3 kV, the power factor of the BST film increased by 13% compared to the unpolarized condition, reaching 20.8 µW cm-1 K-2. Furthermore, a device with 7 pairs of P-N legs was fabricated, achieving a cooling temperature difference of 11.0 K and a net cooling temperature difference of 2.4 K at a current of 10 mA after the saturation polarization of the PZT/PVDF layer. This work reveals the critical effect of introducing ferroelectric layer polarization to achieve excellent thermoelectric performance of the BST film.

Synchronous optimization of H2O and H adsorption on NiO1-xTex nanodots for alkaline photocatalytic H2 evolution.

Suitable H2O and H adsorption on the surface of transition metal chalcogenide cocatalyst is highly required to achieve their excellent alkaline H2-evolution rate. However, the weak adsorption of H2O and H atoms on NiTe surface greatly hinders its alkaline H2-evolution efficiency. Herein, an electron-deficient modulation strategy is proposed to synchronously improve the adsorption of H2O and H atoms on NiTe surface, which can greatly improve the alkaline photocatalytic H2 evolution of TiO2. In this case, highly electronegative oxygen atoms are introduced into the NiTe cocatalysts to induce the formation of electron-deficient Niδ+ and Teδ+ sites in the ultra-small-sized NiO1-xTex nanodots (0.5-2 nm), which can be uniformly loaded onto the TiO2 surface to prepare the NiO1-xTex/TiO2 photocatalysts by a facile complexation-photodeposition strategy. The resulting NiO1-xTex/TiO2 (0.6:0.4) photocatalyst exhibits the optimal activity (2143.36 µmol g-1 h-1), surpassing the activity levels of TiO2 and NiTe/TiO2 samples by 42.3 and 1.8 times, respectively. The experimental and theoretical investigations have revealed that the presence of highly electronegative O atoms in the NiO1-xTex cocatalyst can redistribute the charges of Ni and Te atoms for the formation of electron-deficient Niδ+ and Teδ+ active sites, thereby synchronously enhancing the adsorption of H2O on Niδ+ sites and H on Teδ+ sites and promoting alkaline photocatalytic H2 evolution. The current research about the synchronous optimization of the H2O and H adsorption offers a significant approach to design high-performance H2-evolution materials.

Tailoring the Thermoelectric Properties of 3D-Printed n-Type Bi1.7Sb0.3Te3 with Incorporated Edge-Oxidized Graphene.

Using three-dimensional (3D) printing technology to fabricate Bi2Te3-based thermoelectric (TE) generators opens a potential way to create shape-conformable devices capable of recovering waste heat from thermal energy sources with diverse surface morphologies. However, pores formed in 3D-printed Bi2Te3-based materials by the removal of the organic ink binder result in unsatisfactory performance compared to the bulk materials, which has limited the widespread application of the ink-based 3D printing process. Furthermore, managing the volatile Se element in the n-type materials poses significant technological challenges compared to the p-type counterparts, resulting in a scarcity of research on 3D printing of n-type Bi2Te3. Here, we synthesized edge-oxidized graphene (EOG)-incorporated Se-free n-type Bi1.7Sb0.3Te3 (BST) using a direct ink writing (DIW) process with a binder-free novel ink. The incorporated EOG provides connectivity between small BST grains separated by pores and induces a bimodal-like grain structure during the DIW and sintering process. The optimal EOG content of 0.1 wt % in 3D-printed n-type BST simultaneously achieved both carrier transport control and active phonon scattering, due to its unique microstructure. A maximum ZT of 0.71 was obtained in the 0.1 wt % EOG/BST materials at 448 K, comparable to commercial bulk n-type Bi2Te3-based materials. Further, a single-element device composed of the EOG-BST material exhibited a 2-fold improvement in performance compared to pure-BST. These results open a technological route for the application of 3D printing technology for ink-based TE materials.

Compositionally Graded MoS2xTe2(1-x)/MoS2 van der Waals Heterostructures for Ultrathin Photovoltaic Applications.

van der Waals heterojunctions utilizing two-dimensional (2D) transition-metal dichalcogenide (TMD) materials have emerged as focal points in the field of optoelectronic devices, encompassing applications in light-emitting devices, photodetectors, solar cells, and beyond. In this study, we transferred few-atomic-layer films of compositionally graded ternary MoS2xTe2(1-x) alloys onto metal-organic chemical vapor deposition-grown molybdenum disulfide (MoS2) as p- and n-type structures, leading to the creation of a van der Waals vertical heterostructure. The characteristics of the fabricated MoS2xTe2(1-x)/MoS2 vertical-stacked heterojunction were investigated considering the influence of tellurium (Te) incorporation. The systematic variation of parameter x (i.e., 0.8, 0.6, 0.5, 0.3, and 0) allowed for an exploration of the impact of Te incorporation on the photovoltaic performance of these heterojunctions. As a result, the power conversion efficiency was enhanced by approximately 6 orders of magnitude with increasing Te concentration; notably, photoresponsivities as high as ∼6.4 A/W were achieved. These findings emphasize the potential for enhancing ultrathin solar energy conversion in heterojunctions based on 2D TMDs.

Grain Manipulation by Annealing Treatment Realizes High-Performance N-Type Bi2Te2.4Se0.6 Thermoelectric Material and Device.

Bi2Te3-based materials play a crucial role in solid cooling and power generation, but the rapidly deteriorated ZT with rising temperatures above 450 K severely limits further applications. Here, this paper reports a novel preparation method of annealing treatment for molten ingot, which can enhance the thermoelectric performance of n-type Bi2Te2.4Se0.6 in a wide temperature range. Instead of conventional halides, copper is adopted to regulate the carrier concentration and grain size to optimal levels. During the process of annealing at 573 K for 4 h, the number of twins significantly increases and the grains of Cu-doped samples become larger and more oriented. These optimizations lead to higher carrier mobility with similar carrier concentration compared with the sample without heat treatment. The synergistic effects of Cu doping and annealing treatment realize a high average ZT of 0.89 within 300-600 K in n-type Cu0.02Bi2Te2.4Se0.6. Combined with p-type (Bi,Sb)2Te3, the fabricated thermoelectric device exhibits a high conversion efficiency of 6.9% at a temperature difference of 300 K. This study suggests that annealing treatment is a simple and effective scheme to promote the applications of n-type Bi2(Te,Se)3 in a wide temperature range.

Ultrahigh Power Factor of Sputtered Nanocrystalline N-Type Bi2Te3 Thin Film via Vacancy Defect Modulation and Ti Additives.

Magnetron-sputtered thermoelectric thin films have the potential for reproducibility and scalability. However, lattice mismatch during sputtering can lead to increased defects in the epitaxial layer, which poses a significant challenge to improving their thermoelectric performance. In this work, nanocrystalline n-type Bi2Te3 thin films with an average grain size of ≈110 nm are prepared using high-temperature sputtering and post-annealing. Herein, it is demonstrated that high-temperature treatment exacerbates Te evaporation, creating Te vacancies and electron-like effects. Annealing improves crystallinity, increases grain size, and reduces defects, which significantly increases carrier mobility. Furthermore, the pre-deposited Ti additives are ionized at high temperatures and partially diffused into Bi2Te3, resulting in a Ti doping effect that increases the carrier concentration. Overall, the 1 µm thick n-type Bi2Te3 thin film exhibits a room temperature resistivity as low as 3.56 × 10-6 Ω∙m. Notably, a 5 µm thick Bi2Te3 thin film achieves a record power factor of 6.66 mW mK-2 at room temperature, which is the highest value reported to date for n-type Bi2Te3 thin films using magnetron sputtering. This work demonstrates the potential for large-scale of high-quality Bi2Te3-based thin films and devices for room-temperature TE applications.

Controlled Synthesis of 2D Ferromagnetic/Antiferromagnetic Cr7Te8/MnTe Vertical Heterostructures for High-Tunable Coercivity.

Two-dimensional ferromagnetic/antiferromagnetic (2D-FM/AFM) heterostructures are of great significance to realize the application of spintronic devices such as miniaturization, low power consumption, and high-density information storage. However, traditional mechanical stacking can easily damage the crystal quality or cause chemical contamination residues for 2D materials, which can result in weak interface coupling and difficulty in device regulation. Chemical vapor deposition (CVD) is an effective way to achieve a high-quality heterostructure interface. Herein, high-quality interface 2D-FM/AFM Cr7Te8/MnTe vertical heterostructures were successfully synthesized via a one-pot CVD method. Moreover, the atomic-scale structural scanning transmission electron microscope (STEM) characterization shows that the interface of the vertical heterostructure is clear and flat without an excess interface layer. Compared to the parent Cr7Te8, the coercivity (HC) of the high-quality interface Cr7Te8/MnTe heterostructure is significantly reduced as the thickness of MnTe increases, with a maximum decrease of 74.5% when the thickness of the MnTe nanosheet is around 30 nm. Additionally, the HC of the Cr7Te8/MnTe heterostructure can also be regulated by applying a gate voltage, and the HC increases or decreases with increasing positive or negative gate voltages. Thus, the effective regulation of HC is essential to improving the performance of advanced spintronic devices (e.g., MRAM and magnetic sensors). Our work will provide ideas for spin controlling and device application of 2D-FM/AFM heterostructures.