Dosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors.

Objective.Detectors that can provide accurate dosimetry for microbeam radiation therapy (MRT) must possess intrinsic radiation hardness, a high dynamic range, and a micron-scale spatial resolution. In this work we characterize hydrogenated amorphous silicon detectors for MRT dosimetry, presenting a novel combination of flexible, ultra-thin and radiation-hard features.Approach.Two detectors are explored: an n-type/intrinsic/p-type planar diode (NIP) and an NIP with an additional charge selective layer (NIP + CSC).Results.The sensitivity of the NIP + CSC detector was greater than the NIP detector for all measurement conditions. At 1 V and 0 kGy under the 3T Cu-Cu synchrotron broadbeam, the NIP + CSC detector sensitivity of (7.76 ± 0.01) pC cGy-1outperformed the NIP detector sensitivity of (3.55 ± 0.23) pC cGy-1by 219%. The energy dependence of both detectors matches closely to the attenuation coefficient ratio of silicon against water. Radiation damage measurements of both detectors out to 40 kGy revealed a higher radiation tolerance in the NIP detector compared to the NIP + CSC (17.2% and 33.5% degradations, respectively). Percentage depth dose profiles matched the PTW microDiamond detector's performance to within ±6% for all beam filtrations except in 3T Al-Al due to energy dependence. The 3T Cu-Cu microbeam field profile was reconstructed and returned microbeam width and peak-to-peak values of (51 ± 1)µm and (405 ± 5)µm, respectively. The peak-to-valley dose ratio was measured as a function of depth and agrees within error to the values obtained with the PTW microDiamond. X-ray beam induced charge mapping of the detector revealed minimal dose perturbations from extra-cameral materials.Significance.The detectors are comparable to commercially available dosimeters for quality assurance in MRT. With added benefits of being micron-sized and possessing a flexible water-equivalent substrate, these detectors are attractive candidates for quality assurance,in-vivodosimetry and in-line beam monitoring for MRT and FLASH therapy.

High-Efficiency Metamaterial-Engineered Grating Couplers for Silicon Nitride Photonics.

Silicon nitride (Si3N4) is an ideal candidate for the development of low-loss photonic integrated circuits. However, efficient light coupling between standard optical fibers and Si3N4 chips remains a significant challenge. For vertical grating couplers, the lower index contrast yields a weak grating strength, which translates to long diffractive structures, limiting the coupling performance. In response to the rise of hybrid photonic platforms, the adoption of multi-layer grating arrangements has emerged as a promising strategy to enhance the performance of Si3N4 couplers. In this work, we present the design of high-efficiency surface grating couplers for the Si3N4 platform with an amorphous silicon (α-Si) overlay. The surface grating, fully formed in an α-Si waveguide layer, utilizes subwavelength grating (SWG)-engineered metamaterials, enabling simple realization through single-step patterning. This not only provides an extra degree of freedom for controlling the fiber-chip coupling but also facilitates portability to existing foundry fabrication processes. Using rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations, a metamaterial-engineered grating coupler is designed with a coupling efficiency of -1.7 dB at an operating wavelength of 1.31 µm, with a 1 dB bandwidth of 31 nm. Our proposed design presents a novel approach to developing high-efficiency fiber-chip interfaces for the silicon nitride integration platform for a wide range of applications, including datacom and quantum photonics.

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams.

BACKGROUND: The increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now mandating the use of in vivo dosimetry, whereby a dosimeter is placed on the surface of the patient during treatment. Ideally, in vivo detectors should be flexible to conform to a patient's irregular surfaces. PURPOSE: This study aims to characterize a novel hydrogenated amorphous silicon (a-Si:H) radiation detector for the dosimetry of therapeutic x-ray beams. The detectors are flexible as they are fabricated directly on a flexible polyimide (Kapton) substrate. METHODS: The potential of this technology for application as a real-time flexible detector is investigated through a combined dosimetric and flexibility study. Measurements of fundamental dosimetric quantities were obtained including output factor (OF), dose rate dependence (DPP), energy dependence, percentage depth dose (PDD), and angular dependence. The response of the a-Si:H detectors investigated in this study are benchmarked directly against commercially available ionization chambers and solid-state diodes currently employed for QA practices. RESULTS: The a-Si:H detectors exhibit remarkable dose linearities in the direct detection of kV and MV therapeutic x-rays, with calibrated sensitivities ranging from (0.580 ± 0.002) pC/cGy to (19.36 ± 0.10) pC/cGy as a function of detector thickness, area, and applied bias. Regarding dosimetry, the a-Si:H detectors accurately obtained OF measurements that parallel commercially available detector solutions. The PDD response closely matched the expected profile as predicted via Geant4 simulations, a PTW Farmer ionization chamber and a PTW ROOS chamber. The most significant variation in the PDD performance was 5.67%, observed at a depth of 3 mm for detectors operated unbiased. With an external bias, the discrepancy in PDD response from reference data was confined to ± 2.92% for all depths (surface to 250 mm) in water-equivalent plastic. Very little angular dependence is displayed between irradiations at angles of 0° and 180°, with the most significant variation being a 7.71% decrease in collected charge at a 110° relative angle of incidence. Energy dependence and dose per pulse dependence are also reported, with results in agreement with the literature. Most notably, the flexibility of a-Si:H detectors was quantified for sample bending up to a radius of curvature of 7.98 mm, where the recorded photosensitivity degraded by (-4.9 ± 0.6)% of the initial device response when flat. It is essential to mention that this small bending radius is unlikely during in vivo patient dosimetry. In a more realistic scenario, with a bending radius of 15-20 mm, the variation in detector response remained within ± 4%. After substantial bending, the detector's photosensitivity when returned to a flat condition was (99.1 ± 0.5)% of the original response. CONCLUSIONS: This work successfully characterizes a flexible detector based on thin-film a-Si:H deposited on a Kapton substrate for applications in therapeutic x-ray dosimetry. The detectors exhibit dosimetric performances that parallel commercially available dosimeters, while also demonstrating excellent flexibility results.

APHRODITE: A Compact Lab-on-Chip Biosensor for the Real-Time Analysis of Salivary Biomarkers in Space Missions.

One of the main challenges to be faced in deep space missions is to protect the health and ensure the maximum efficiency of the crew by preparing methods of prevention and in situ diagnosis. Indeed, the hostile environment causes important health problems, ranging from muscle atrophy, osteopenia, and immunological and metabolic alterations due to microgravity, to an increased risk of cancer caused by exposure to radiation. It is, therefore, necessary to provide new methods for the real-time measurement of biomarkers suitable for deepening our knowledge of the effects of space flight on the balance of the immune system and for allowing the monitoring of the astronaut's health during long-term missions. APHRODITE will enable human space exploration because it fills this void that affects both missions in LEO and future missions to the Moon and Mars. Its scientific objectives are the design, production, testing, and in-orbit demonstration of a compact, reusable, and reconfigurable system for performing the real-time analysis of oral fluid samples in manned space missions. In the frame of this project, a crew member onboard the ISS will employ APHRODITE to measure the selected target analytes, cortisol, and dehydroepiandrosterone sulfate (DHEA-S), in oral fluid, in four (plus one additional desired session) separate experiment sessions. The paper addresses the design of the main subsystems of the analytical device and the preliminary results obtained during the first implementations of the device subsystems and testing measurements on Earth. In particular, the system design and the experiment data output of the lab-on-chip photosensors and of the front-end readout electronics are reported in detail along with preliminary chemical tests for the duplex competitive CL-immunoassay for the simultaneous detection of cortisol and DHEA-S. Different applications also on Earth are envisaged for the APHRODITE device, as it will be suitable for point-of-care testing applications (e.g., emergency medicine, bioterrorism, diagnostics in developing countries, etc.).

High Passivation Performance of Cat-CVD i-a-Si:H Derived from Bayesian Optimization with Practical Constraints.

High-quality passivation with intrinsic hydrogenated amorphous Si (i-a-Si:H) is essential for achieving high-efficiency Si heterojunction (SHJ) solar cells. The formation of i-a-Si:H with a high passivation quality requires strict control of the hydrogen content and film density. In this study, we report the effective discovery of i-a-Si:H deposition conditions through catalytic chemical vapor deposition using Bayesian optimization (BO) to maximize the passivation performance. Another contribution of this study to materials science is the establishment of a practical BO scheme consisting of several prediction models in order to account for the practical constraints. By applying the BO scheme, effective minority carrier lifetime (τeff) is maximized within the deposition condition range, while being constrained by the i-a-Si:H thickness and the capabilities of the experimental setup. We achieved a high passivation performance of τeff > 2.6 ms with only 8 cycles in BO, starting with 14 initial samples. Within the investigated range, the deposition conditions were further explored over 20 cycles. The BO provided not only optimal deposition conditions but also scientific knowledge. Contour plots of the predicted τeff values obtained through the BO process demonstrated that there is a band-like high τeff condition in the parameter space between the substrate temperature and SiH4 flow rate. The high void fraction and epitaxial growth were inhibited by controlling the substrate temperature and SiH4 flow rate, resulting in a high passivation quality. This indicates that the combination of the SiH4 flow rate and substrate temperature parameters is crucial to passivation quality. These results can be applied to determine the deposition conditions for a good a-Si:H layer without a high void fraction or epitaxial growth. The research methods shown in this study, practical BO scheme, and further analysis based on the optimized results will be also useful to optimize and analyze the process conditions of semiconductor processes including plasma-enhanced chemical vapor deposition for SHJ solar cells.

Fine-Tuning Intrinsic and Doped Hydrogenated Amorphous Silicon Thin-Film Anodes Deposited by PECVD to Enhance Capacity and Stability in Lithium-Ion Batteries.

Silicon is a promising alternative to graphite as an anode material in lithium-ion batteries, thanks to its high theoretical lithium storage capacity. Despite these high expectations, silicon anodes still face significant challenges, such as premature battery failure caused by huge volume changes during charge-discharge processes. To solve this drawback, using amorphous silicon as a thin film offers several advantages: its amorphous nature allows for better stress mitigation and it can be directly grown on current collectors for material savings and improved Li-ion diffusion. Furthermore, its conductivity is easily increased through doping during its growth. In this work, we focused on a comprehensive study of the influence of both electrical and structural properties of intrinsic and doped hydrogenated amorphous silicon (aSi:H) thin-film anodes on the specific capacity and stability of lithium-ion batteries. This study allows us to establish that hydrogen distribution in the aSi:H material plays a pivotal role in enhancing battery capacity and longevity, possibly masking the significance of the conductivity in the case of doped electrodes. Our findings show that we were able to achieve high initial specific capacities (3070 mAhg-1 at the 10th cycle), which can be retained at values higher than those of graphite for a significant number of cycles (>120 cycles), depending on the structural properties of the aSi:H films. To our knowledge, this is the first comprehensive study of the influence of these properties of thin films with different doping levels and hydrogen distributions on their optimization and use as anodes in lithium-ion batteries.

High-Strength Amorphous Silicon Carbide for Nanomechanics.

For decades, mechanical resonators with high sensitivity have been realized using thin-film materials under high tensile loads. Although there are remarkable strides in achieving low-dissipation mechanical sensors by utilizing high tensile stress, the performance of even the best strategy is limited by the tensile fracture strength of the resonator materials. In this study, a wafer-scale amorphous thin film is uncovered, which has the highest ultimate tensile strength ever measured for a nanostructured amorphous material. This silicon carbide (SiC) material exhibits an ultimate tensile strength of over 10 GPa, reaching the regime reserved for strong crystalline materials and approaching levels experimentally shown in graphene nanoribbons. Amorphous SiC strings with high aspect ratios are fabricated, with mechanical modes exceeding quality factors 108 at room temperature, the highest value achieves among SiC resonators. These performances are demonstrated faithfully after characterizing the mechanical properties of the thin film using the resonance behaviors of free-standing resonators. This robust thin-film material has significant potential for applications in nanomechanical sensors, solar cells, biological applications, space exploration, and other areas requiring strength and stability in dynamic environments. The findings of this study open up new possibilities for the use of amorphous thin-film materials in high-performance applications.

Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness.

The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)n multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffraction, and four-point probe resistance measurement) and ex situ methods (X-ray diffraction and optical microscopy). An increase in the thickness of the aluminum layer from 10 to 80 nm was found to result in a decrease in the value of the apparent activation energy Ea of silicon crystallization from 137 to 117 kJ/mol (as estimated by the Kissinger method) as well as an increase in the crystallization heat from 12.3 to 16.0 kJ/(mol Si). The detailed kinetic analysis showed that the change in the thickness of an individual Al layer could lead to a qualitative change in the mechanism of aluminum-induced silicon crystallization: with the thickness of Al ≤ 20 nm. The process followed two parallel routes described by the n-th order reaction equation with autocatalysis (Cn-X) and the Avrami-Erofeev equation (An): with an increase in the thickness of Al ≥ 40 nm, the process occurred in two consecutive steps. The first one can be described by the n-th order reaction equation with autocatalysis (Cn-X), and the second one can be described by the n-th order reaction equation (Fn). The change in the mechanism of amorphous silicon crystallization was assumed to be due to the influence of the degree of Al defects at the initial state on the kinetics of the crystallization process.

Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy.

In silicon heterojunction solar cell technology, thin layers of hydrogenated amorphous silicon (a-Si:H) are applied as passivating contacts to the crystalline silicon (c-Si) wafer. Thus, the properties of the a-Si:H is crucial for the performance of the solar cells. One important property of a-Si:H is its microstructure which can be characterized by the microstructure parameter R based on Si─H bond stretching vibrations. A common method to determine R is Fourier transform infrared (FTIR) absorption measurement which, however, is difficult to perform on solar cells for various reasons like the use of textured Si wafers and the presence of conducting oxide contact layers. Here, it is demonstrated that Raman spectroscopy is suitable to determine the microstructure of bulk a-Si:H layers of 10 nm or less on textured c-Si underneath indium tin oxide as conducting oxide. A detailed comparison of FTIR and Raman spectra is performed and significant differences in the microstructure parameter are obtained by both methods with decreasing a-Si:H film thickness.

Fluctuation Electron Microscopy on Amorphous Silicon and Amorphous Germanium.

Variable resolution fluctuation electron microscopy experiments were performed on self-ion implanted amorphous silicon and amorphous germanium to analyze the medium-range order. The results highlight that the commonly used pair-persistence analysis is influenced by the experimental conditions. Precisely, the structural correlation length Λ, a metric for the medium-range order length scale in the material, obtained from this particular evaluation varies depending on whether energy filtering is used to acquire the data. In addition, Λ depends on the sample thickness. Both observations can be explained by the fact that the pair-persistence analysis utilizes the experimentally susceptible absolute value of the normalized variance obtained from fluctuation electron microscopy data. Instead, plotting the normalized variance peak magnitude over the electron beam size offers more robust results. This evaluation yields medium-range order with an extent of approximately (1.50 ± 0.50) nm for the analyzed amorphous germanium and around (1.10 ± 0.20) nm for amorphous silicon.

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4).

Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is still unclear. Most prominently, the Si dangling bond or K-center has been identified as an amphoteric trap center. Nevertheless, experiments have shown that these dangling bonds only make up a small portion of the total density of electrical active defects, motivating the search for other charge trapping sites. Here, we use a machine-learned force field to create model structures of amorphous Si3N4 by simulating a melt-and-quench procedure with a molecular dynamics algorithm. Subsequently, we employ density functional theory in conjunction with a hybrid functional to investigate the structural properties and electronic states of our model structures. We show that electrons and holes can localize near over- and under-coordinated atoms, thereby introducing defect states in the band gap after structural relaxation. We analyze these trapping sites within a nonradiative multi-phonon model by calculating relaxation energies and thermodynamic charge transition levels. The resulting defect parameters are used to model the potential energy curves of the defect systems in different charge states and to extract the classical energy barrier for charge transfer. The high energy barriers for charge emission compared to the vanishing barriers for charge capture at the defect sites show that intrinsic electron traps can contribute to the memory effect in charge trap flash devices.

Challenges of Electron Correlation Microscopy on Amorphous Silicon and Amorphous Germanium.

Electron correlation microscopy experiments were conducted on amorphous germanium (a-Ge) and amorphous silicon (a-Si) with the goal to study self-diffusion. For this purpose, a series of tilted dark-field images were acquired during in situ heating of the samples in a transmission electron microscope. These experiments show that the measurements are greatly affected by artefacts. Contamination, crystallization, electron beam-induced sputtering, and macroscopic bending of the samples pose major obstacles to the measurements. Other, more subtle experimental artefacts could occur in addition to these which makes interpretations regarding the structural dynamics nearly impossible. The data were nonetheless evaluated to see if some useful information could be extracted. One such result is that the distribution of the characteristic times τKWW, which were obtained from stretched exponential fits to the intensity autocorrelation data, is spatially heterogeneous. This spatial heterogeneity is assumed to be caused by a potential nonergodicity of the materials, the artefacts or an inhomogeneous amorphous structure. Further data processing shows that the characteristic times τKWW are moreover temperature independent, especially for the a-Ge data. It is concluded that the structural rearrangements over time are primarily electron beam-driven and that diffusive dynamics are too slow to be measured at the chosen, experimentally accessible annealing temperatures.

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy.

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity is achieved through MRT combining ultra-high dose rates with micron-scale spatial fractionation of the delivered x-ray treatment field. Quality assurance dosimetry for MRT must therefore overcome a significant challenge, as detectors require both a high dynamic range and a high spatial resolution to perform accurately.Approach. In this work, a series of radiation hard a-Si:H diodes, with different thicknesses and carrier selective contact configurations, have been characterised for x-ray dosimetry and real-time beam monitoring applications in extremely high flux beamlines utilised for MRT at the Australian Synchrotron.Results. These devices displayed superior radiation hardness under constant high dose-rate irradiations on the order of 6000 Gy s-1, with a variation in response of 10% over a delivered dose range of approximately 600 kGy. Dose linearity of each detector to x-rays with a peak energy of 117 keV is reported, with sensitivities ranging from (2.74 ± 0.02) nC/Gy to (4.96 ± 0.02) nC/Gy. For detectors with 0.8µm thick active a-Si:H layer, their operation in an edge-on orientation allows for the reconstruction of micron-size beam profiles (microbeams). The microbeams, with a nominal full-width-half-max of 50µm and a peak-to-peak separation of 400µm, were reconstructed with extreme accuracy. The full-width-half-max was observed as 55 ± 1µm. Evaluation of the peak-to-valley dose ratio and dose-rate dependence of the devices, as well as an x-ray induced charge (XBIC) map of a single pixel is also reported.Significance. These devices based on novel a-Si:H technology possess a unique combination of accurate dosimetric performance and radiation resistance, making them an ideal candidate for x-ray dosimetry in high dose-rate environments such as FLASH and MRT.

Nanostructure of hydrogenated amorphous silicon (a-Si:H) films studied by nuclear magnetic resonance.

The aim of this work is to investigate the nanostructures of nanoporous materials by studying the anisotropy of the nuclear spin-spin and spin-lattice relaxations of the guest molecules trapped in the pores. The nuclear magnetic resonance (NMR) data are analyzed in the framework of the theory of the nuclear relaxation dominated by the dipole-dipole interactions in gas or liquid species contained in nanopores. A distinctive feature of this theory is the establishment of a relationship between the degree of orientation ordering of nanopores in the host matrix and their characteristic volume and the anisotropy of the NMR relaxation times. In this work the complex experimental and theoretical approach was applied to study the nanostructure of hydrogenated amorphous silicon (a-Si:H) films. A feature of this study is the simultaneous investigation of the three (T1, T1ρ, and T2) NMR relaxation times, for the same sample. This allows us to determine not only the degree of orientation ordering of nanopores but also to estimate their size (∼1 nm) and correlation times of the nanopore fluctuations. The obtained results demonstrate that the developed approach is effective in studying details of nanostructure of different nanoporous materials.

High-Accuracy Neural Network Interatomic Potential for Silicon Nitride.

In the field of machine learning (ML) and data science, it is meaningful to use the advantages of ML to create reliable interatomic potentials. Deep potential molecular dynamics (DEEPMD) are one of the most useful methods to create interatomic potentials. Among ceramic materials, amorphous silicon nitride (SiNx) features good electrical insulation, abrasion resistance, and mechanical strength, which is widely applied in industries. In our work, a neural network potential (NNP) for SiNx was created based on DEEPMD, and the NNP is confirmed to be applicable to the SiNx model. The tensile tests were simulated to compare the mechanical properties of SiNx with different compositions based on the molecular dynamic method coupled with NNP. Among these SiNx, Si3N4 has the largest elastic modulus (E) and yield stress (σs), showing the desired mechanical strength owing to the largest coordination numbers (CN) and radial distribution function (RDF). The RDFs and CNs decrease with the increase of x; meanwhile, E and σs of SiNx decrease when the proportion of Si increases. It can be concluded that the ratio of nitrogen to silicon can reflect the RDFs and CNs in micro level and macro mechanical properties of SiNx to a large extent.

Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization.

We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.

Fluctuation cepstral scanning transmission electron microscopy of mixed-phase amorphous materials.

Four-dimensional scanning transmission electron microscopy (4D-STEM) is a versatile analytical tool for characterizing materials structural properties. However, extending such analysis to disordered materials is challenging, especially in technologically important samples with mixed ordered and disordered phases. Here, we present a new 4D-STEM method, called fluctuation cepstral STEM (FC-STEM), based on the fluctuation analysis of cepstral transform of diffraction patterns. The peaks in the associated transformation relate to inter-atomic distances in a thin sample. By varying the real-space range over which fluctuations are calculated, distinct ordered and disordered phases can be mapped in a diffractive image reconstruction. We demonstrate the principles of FC-STEM by characterizing a silicon anode, harvested from a cycled lithium-ion battery. A mixture of amorphous and nanocrystalline silicon, graphitic carbon, and electrolyte by-products is identified and mapped. Comparisons with conventional electron imaging and energy-dispersive X-ray spectroscopy show that FC-STEM is highly effective for the structure determination of mixed-phase amorphous materials.

Chronic Stability of Local Field Potentials Using Amorphous Silicon Carbide Microelectrode Arrays Implanted in the Rat Motor Cortex.

Implantable microelectrode arrays (MEAs) enable the recording of electrical activity of cortical neurons, allowing the development of brain-machine interfaces. However, MEAs show reduced recording capabilities under chronic conditions, prompting the development of novel MEAs that can improve long-term performance. Conventional planar, silicon-based devices and ultra-thin amorphous silicon carbide (a-SiC) MEAs were implanted in the motor cortex of female Sprague-Dawley rats, and weekly anesthetized recordings were made for 16 weeks after implantation. The spectral density and bandpower between 1 and 500 Hz of recordings were compared over the implantation period for both device types. Initially, the bandpower of the a-SiC devices and standard MEAs was comparable. However, the standard MEAs showed a consistent decline in both bandpower and power spectral density throughout the 16 weeks post-implantation, whereas the a-SiC MEAs showed substantially more stable performance. These differences in bandpower and spectral density between standard and a-SiC MEAs were statistically significant from week 6 post-implantation until the end of the study at 16 weeks. These results support the use of ultra-thin a-SiC MEAs to develop chronic, reliable brain-machine interfaces.

Hydrogenated Amorphous Silicon-Based Nanomaterials as Alternative Electrodes to Graphite for Lithium-Ion Batteries.

Graphite is the material most used as an electrode in commercial lithium-ion batteries. On the other hand, it is a material with low energy capacity, and it is considered a raw critical material given its large volume of use. In the current energy context, we must promote the search for alternative materials based on elements that are abundant, sustainable and that have better performance for energy storage. We propose thin materials based on silicon, which has a storage capacity eleven times higher than graphite. Nevertheless, due to the high-volume expansion during lithiation, it tends to crack, limiting the life of the batteries. To solve this problem, hydrogenated amorphous silicon has been researched, in the form of thin film and nanostructures, since, due to its amorphous structure, porosity and high specific surface, it could better absorb changes in volume. These thin films were grown by plasma-enhanced chemical vapor deposition, and then the nanowires were obtained by chemical etching. The compositional variations of films deposited at different temperatures and the incorporation of dopants markedly influence the stability and longevity of batteries. With these optimized electrodes, we achieved batteries with an initial capacity of 3800 mAhg-1 and 82% capacity retention after 50 cycles.

Thin-Film-Based Multifunctional System for Optical Detection and Thermal Treatment of Biological Samples.

In this work, we present a multifunctional Lab-on-Chip (LoC) platform based on hydrogenated amorphous silicon sensors suitable for a wide range of application in the fields of biochemical and food quality control analysis. The proposed system includes a LoC fabricated on a 5 cm × 5 cm glass substrate and a set of electronic boards for controlling the LoC functionalities. The presented Lab-on-Chip comprises light and temperature sensors, a thin film resistor acting as a heating source, and an optional thin film interferential filter suitable for fluorescence analysis. The developed electronics allows to control the thin film heater, a light source for fluorescence and absorption measurements, and the photosensors to acquire luminescent signals. All these modules are enclosed in a black metal box ensuring the portability of the whole platform. System performances have been evaluated in terms of sensor optical performances and thermal control achievements. For optical sensors, we have found a minimum number of detectable photons of 8 × 104 s-1·cm-2 at room temperature, 1.6 × 106 s-1·cm-2 in presence of fluorescence excitation source, and 2.4 × 106 s-1·cm-2 at 90 °C. From a thermal management point of view, we have obtained heating and cooling rates both equal to 2.2 °C/s, and a temperature sensor sensitivity of about 3 mV/°C even in presence of light. The achieved performances demonstrate the possibility to simultaneously use all integrated sensors and actuators, making promising the presented platform for a wide range of application fields.