Thermoelectric Sensor with CuI Supported on Rough Glass.

Thermoelectric generators convert heat into a potential difference with arrays of p- and n-type materials, a process that allows thermal energy harvesting and temperature detection. Thermoelectric sensors have attracted interest in relation to the creation of temperature and combustible gas sensors due to their simple operation principle and self-powering ability. CuI is an efficient p-type thermoelectric material that can be readily produced from a Cu layer by an iodination method. However, the vapor iodination of Cu has the disadvantage of weak adhesion on a bare glass substrate due to stress caused by crystal growth, limiting microfabrication applications of this process. This work presents a rough soda-lime glass substrate with nanoscale cavities to support the growth of a CuI layer, showing good adhesion and enhanced thermoelectric sensitivity. A rough glass sample with nanocavities is developed by reactive ion etching of a photoresist-coated glass sample in which aggregates of carbon residuals and the accumulation of NaF catalyze variable etching rates to produce local isotropic etching and roughening. A thermoelectric sensor consists of 41 CuI/In-CoSb3 thermoelectric leg pairs with gold electrodes for electrical interconnection. A thermoelectric leg has a width of 25 µm, a length of 3 mm, and a thickness of 1 µm. The thermoelectric response results in an open-circuit voltage of 13.7 mV/K on rough glass and 0.9 mV/K on bare glass under ambient conditions. Rough glass provides good mechanical interlocking and introduces important variations of the crystallinity and composition in the supported thermoelectric layers, leading to enhanced thermopower.

Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio.

Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n-SZTO film grown by the RF magnetron sputtering method. A nitrogen annealing process reduces ionized impurity scattering dominantly incurred by Cu vacancy and structural defects at the grain boundaries in the CuI film to result in improved diode performance; the current rectification ratio estimated at ±2 V is enhanced from ≈106 to ≈107. Various diode parameters, including ideality factor, reverse saturation current, offset current, series resistance, and parallel resistance, are estimated based on the Shockley diode equation. An energy band diagram exhibiting the type-II band alignment is proposed to explain the diode characteristics. The present p-CuI/n-SZTO diode can be a promising building block for constructing useful optoelectronic components such as a light-emitting diode and a UV photodetector.

Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor.

The challenges of making high-performance, low-temperature processed, p-type transparent conductors (TCs) have been the main bottleneck for the development of flexible transparent electronics. Though a few p-type transparent conducting oxides (TCOs) have shown promising results, they need high processing temperature to achieve the required conductivity which makes them unsuitable for organic and flexible electronic applications. Copper iodide is a wide band gap p-type semiconductor that can be heavily doped at low temperature (<100 °C) to achieve conductivity comparable or higher than many of the well-established p-type TCOs. However, as-processed CuI loses its transparency and conductivity with time in an ambient condition which makes them unsuitable for long-term applications. Herein, we propose CuI-TiO2 composite thin films as a replacement of pure CuI. We show that the introduction of TiO2 in CuI makes it more stable in ambient conditions while also improving its conductivity and transparency. A detailed comparative analysis between CuI and CuI-TiO2 composite thin films has been performed to understand the reasons for improved conductivity, transparency, and stability of CuI-TiO2 samples in comparison to pure CuI samples. The enhanced conductivity in CuI-TiO2 stems from the highly conductive space-charge layer formation at the CuI-TiO2 interface, whereas the improved transparency is due to reduced CuI grain growth mobility in the presence of TiO2. The improved stability of CuI-TiO2 in comparison to pure CuI is a result of inhibited recrystallization and grain growth, reduced loss of iodine, and limited oxidation of the CuI phase in the presence of TiO2. For optimized fraction of TiO2, an average transparency of ∼78% (in 450-800 nm region) and a resistivity of 14 mΩ·cm are achieved, while maintaining a relatively high mobility of ∼3.5 cm2 V-1 s-1 with hole concentration reaching as high as 1.3 × 1020 cm-3. Most importantly, this work opens up the possibility to design a new range of p-type transparent conducting materials using the CuI/insulator composite system such as CuI/SiO2, CuI/Al2O3, CuI/SiNx, and so forth.