Density of Surface States: Another Key Contributing Factor in Triboelectric Charge Generation.

The triboelectric nanogenerator (TENG) has been invented as a technology for harvesting mechanical energy, as well as for allocating quantized charge for scientific instruments. The charge generation of the TENG is mainly related to the triboelectric effect or contact electrification (CE) as usually described by the potential-well-electron-cloud model, while the triboelectric charge transfer is related to the difference in the occupied energy levels of electrons. However, in our experiment, we observed an abnormal triboelectric charge generation phenomena between ternary materials, which cannot be explained by the occupied energy level difference only. To address this issue, we proposed the model based on the density of surface states (DOSS) as another key contributing factor to the triboelectric charge generation. To demonstrate our model, we introduced an approach to measure the DOSS through applying external electric field between two triboelectric surfaces. Our experiments confirmed the contribution of the DOSS to the triboelectric charge generation, with the derived charge density consistent with the measured results, which verified our model. We also predicted that the FEP has the potential to achieve a high charge density of ∼5.6 × 10-4 C/m2, which is close to the reported maximum values. This study provides another key contributing factor to the triboelectric charge generation, which may provide a more complete model for guiding the material selection and modification to tailor the surface charge generated by the CE.

Surface State Density Determines the Energy Level Alignment at Hybrid Perovskite/Electron Acceptors Interfaces.

Substantial variations in the electronic structure and thus possibly conflicting energetics at interfaces between hybrid perovskites and charge transport layers in solar cells have been reported by the research community. In an attempt to unravel the origin of these variations and enable reliable device design, we demonstrate that donor-like surface states stemming from reduced lead (Pb0) directly impact the energy level alignment at perovskite (CH3NH3PbI3-xClx) and molecular electron acceptor layer interfaces using photoelectron spectroscopy. When forming the interfaces, it is found that electron transfer from surface states to acceptor molecules occurs, leading to a strong decrease in the density of ionized surface states. As a consequence, for perovskite samples with low surface state density, the initial band bending at the pristine perovskite surface can be flattened upon interface formation. In contrast, for perovskites with a high surface state density, the Fermi level is strongly pinned at the conduction band edge, and only minor changes in surface band bending are observed upon acceptor deposition. Consequently, depending on the initial perovskite surface state density, very different interface energy level alignment situations (variations over 0.5 eV) are demonstrated and rationalized. Our findings help explain the rather dissimilar reported energy levels at interfaces with perovskites, refining our understanding of the operating principles in devices comprising this material.