Defect Engineering Simultaneously Regulating Exciton Dissociation in Carbon Nitride and Local Electron Density in Pt Single Atoms Toward Highly Efficient Photocatalytic Hydrogen Production.

The high exciton binding energy (Eb) and sluggish surface reaction kinetics have severely limited the photocatalytic hydrogen production activity of carbon nitride (CN). Herein, a hybrid system consisting of nitrogen defects and Pt single atoms is constructed through a facile self-assembly and photodeposition strategy. Due to the acceleration of exciton dissociation and regulation of local electron density of Pt single atoms along with the introduction of nitrogen defects, the optimized Pt-MCT-3 exhibits a hydrogen production rate of 172.0 µmol h-1 (λ ≥ 420 nm), ≈41 times higher than pristine CN. The apparent quantum yield for the hydrogen production is determined to be 27.1% at 420 nm. The experimental characterizations and theoretical calculations demonstrate that the nitrogen defects act as the electron traps for the exciton dissociation, resulting in a decrease of Eb from 86.92 to 43.20 meV. Simultaneously, the stronger interaction between neighboring nitrogen defects and Pt single atoms directionally drives free electrons to aggregate around Pt single atoms, and tailors the d-band electrons of Pt, forming a moderate binding strength between Pt atoms and H* intermediates.

FeCoCuMnRuB Nanobox with Dual Driving of High-Entropy and Electron-Trap Effects as the Efficient Electrocatalyst for Water Oxidation.

High-entropy borides hold potential as electrocatalysts for water oxidation. However, the synthesis of the tailored nanostructures remains a challenge due to the thermodynamic immiscibility of polymetallic components. Herein, a FeCoCuMnRuB nanobox decorated with a nanosheet array was synthesized for the first time by a "coordination-etch-reduction" method. The FeCoCuMnRuB nanobox has various structural characteristics to express the catalytic performance; meanwhile, it combines the high-entropy effect of multiple components with the electron trap effect induced by electron-deficient B, synergistically regulating its electronic structure. As a result, FeCoCuMnRuB nanobox exhibits enhanced OER activity with a low overpotential (η10 = 233 mV), high TOF value (0.0539 s-1), small Tafel slope (61 mV/dec), and a satisfactory stability for 200 h, outperforming the high-entropy alloy and low-entropy borides. This work develops a high entropy and electron-deficient B-driven strategy for motivating the catalytic performance of water oxidation, which broadens the structural diversity and category of high-entropy materials.

Formation of electron traps in semiconducting polymers via a slow triple-encounter between trap precursor particles.

Already in 2012, Blom et al. reported (Nature Materials 2012, 11, 882) in semiconducting polymers on a general electron-trap density of ≈3 × 1017 cm-3, centered at an energy of ≈3.6 eV below vacuum. It was suggested that traps have an extrinsic origin, with the water-oxygen complex [2(H2O)-O2] as a possible candidate, based on its electron affinity. However, further evidence is lacking and the origin of universal electron traps remained elusive. Here, in polymer diodes, the temperature-dependence of reversible electron traps is investigated that develop under bias stress slowly over minutes to a density of 2 × 1017 cm-3, centered at an energy of 3.6 eV below vacuum. The trap build-up dynamics follows a 3rd-order kinetics, in line with that traps form via an encounter between three diffusing precursor particles. The accordance between universal and slowly evolving traps suggests that general electron traps in semiconducting polymers form via a triple-encounter process between oxygen and water molecules that form the suggested [2(H2O)-O2] complex as the trap origin.

Formation of universal electron traps in polymer light-emitting diodes is a dynamic process that occurs via a slow triple-encounter between trap precursor species, with the water-oxygen [2(H₂O)-O₂] complex as a likely candidate.

Electron traps and energy storage: modeling a bright path to the future.

By employing time-dependent density functional theory for solid-state chemistry, the research presented by Andrii Shyichuk [Acta Cryst. (2023), B67, 437-449] significantly contributes to the understanding of electron/hole traps in doped materials.

Improved Thermal and Chemical Stability of Oxynitride Phosphor from Facile Chemical Synthesis for Vehicle Cornering Lights.

Orange Eu2+ -doped phosphors are essential for light-emitting diodes for cornering lights to prevent fatal road accidents at night, but such phosphors require features of high thermal, chemical stability and facile synthesis. This study reports a series of yellow-orange-red emitting SrAl2 Si3 ON6 :Eu2+ oxynitride phosphors, derived from the SrAlSi4 N7 nitride iso-structure by replacing Si4+ -N3- with Al3+ -O2- . The introduction of a certain amount of oxygen enabled the facile synthesis under atmospheric pressure using the air-stable raw materials SrCO3 , Eu2 O3 , AlN and Si3 N4 . SrAl2 Si3 ON6 has a smaller band gap and lower structure rigidity than SrAlSi4 N7 (5.19 eV vs 5.50 eV, Debye temperature 719 K vs 760 K), but exhibits higher thermal stability with 100 % of room temperature intensity remaining at 150 °C compared to 85 % for SrAlSi4 N7 . Electron paramagnetic resonance, thermoluminescence and density functional theory revealed that the oxygen vacancy electron traps compensated the thermal loss. Additionally, no decrease in emission intensity was found after either being heated at 500 °C for 2 hours or being immersed in water for 20 days, implying both of the thermal and chemical stability of SrAl2 Si3 ON6 :Eu2+ phosphors. The strategy of oxynitride-introduction from nitride promotes the development of low-cost thermally and chemically stable luminescent materials.

Molecular Simulation of Electron Traps in Epoxy Resin/Graphene Oxide Nanocomposites.

Trapped space charges in epoxy composite distort the electric field, which will induce the failure of the insulation system, and nano graphene oxide may inhibit the curing behavior of epoxy resin matrix. This paper analyzes how the two interfaces affect the electron traps of epoxy resin/graphene oxide systems with different nanofiller contents. The electron affinity energy of epoxy resin matrix and nano filler molecules in the epoxy resin/graphene oxide system is calculated based on quantum chemistry. It is found that nano graphene oxide has a strong electron affinity energy and is easier to capture electrons. Then the influence of the interface formed by the epoxy resin matrix and the nano graphene oxide on the electron transfer ability is calculated. The epoxy resin matrix contains the electron transfer ability of interfaces formed by nano graphene oxide and the molecular chain is different from that of unreacted molecules. The results can provide a reference for the modification of epoxy resin/graphene oxide nanocomposites.

A High-Quality Entropy Source Using van der Waals Heterojunction for True Random Number Generation.

Generators of random sequences used in high-end applications such as cryptography rely on entropy sources for their indeterminism. Physical processes governed by the laws of quantum mechanics are excellent sources of entropy available in nature. However, extracting enough entropy from such systems for generating truly random sequences is challenging while maintaining the feasibility of the extraction procedure for real-world applications. Here, we present a compact and an all-electronic van der Waals heterostructure-based device capable of detecting discrete charge fluctuations for extracting entropy from physical processes and use it for the generation of independent and identically distributed true random sequences. We extract a record-high value (>0.98 bits/bit) of min-entropy using the proposed scheme. We demonstrate an entropy generation rate tunable over multiple orders of magnitude and show the persistence of the underlying physical process for temperatures ranging from cryogenic to ambient conditions. We verify the random nature of the generated sequences using tests such as NIST SP 800-90B standard and other statistical measures and verify the suitability of our random sequence for cryptographic applications using the NIST SP 800-22 standard. The generated random sequences are then used in implementing various randomized algorithms without any preconditioning steps.

Enhanced Long-Term Stability of Organic Electrode Materials by a Trap Filler Strategy.

The sensitivity of organic electrode materials to water and oxygen has long been the bottleneck of their further development. The residual and penetrative water and oxygen in electrochemical cells form electron traps that trigger irreversible side reactions, which is detrimental to their long-term stability. A trap filler strategy by introducing molecules with low ionization energy in a cell, bis(pentamethylcyclopentadienyl)cobalt(II) (DMC) as an example, is demonstrated to deactivate traps spontaneously by donating electrons to traps without causing undesirable reactions with electrode materials. The electrode materials BthCz and AQCz, with lowest unoccupied molecular orbital levels above or near the electron traps (-3.6 to -3.8 eV), exhibit conspicuous stability increment of 68.6 and 26.3%, respectively, with the optimized DMC concentration of 5 × 10-4 M in acetonitrile electrolyte.

TiO2 Nanorods and Pt Nanoparticles under a UV-LED for an NO2 Gas Sensor at Room Temperature.

Because the oxides of nitrogen (NOx) cause detrimental effects on not only the environment but humans, developing a high-performance NO2 gas sensor is a crucial issue for real-time monitoring. To this end, metal oxide semiconductors have been employed for sensor materials. Because in general, semiconductor-type gas sensors require a high working temperature, photoactivation has emerged as an alternative method for realizing the sensor working at room temperature. In this regard, titanium dioxide (TiO2) is a promising material for its photocatalytic ability with ultraviolet (UV) photonic energy. However, TiO2-based sensors inevitably encounter a problem of recombination of photogenerated electron-hole pairs, which occurs in a short time. To address this challenge, in this study, TiO2 nanorods (NRs) and Pt nanoparticles (NPs) under a UV-LED were used as an NO2 gas sensor to utilize the Schottky barrier formed at the TiO2-Pt junction, thereby capturing the photoactivated electrons by Pt NPs. The separation between the electron-hole pairs might be further enhanced by plasmonic effects. In addition, it is reported that annealing TiO2 NRs can achieve noteworthy improvements in sensing performance. Elucidation of the performance enhancement is suggested with the investigation of the X-ray diffraction patterns, which implies that the crystallinity was improved by the annealing process.

Universal Limit for Air-Stable Molecular n-Doping in Organic Semiconductors.

The air sensitivity of n-doped layers is crucial for the long-term stability of organic electronic devices. Although several air-stable and highly efficient n-dopants have been developed, the reason for the varying air sensitivity between different n-doped layers, in which the n-dopant molecules are dispersed, is not fully understood. In contrast to previous studies that compared the air stability of doped films with the energy levels of neat host or dopant layers, we trace back the varying degree of air sensitivity to the energy levels of integer charge transfer states (ICTCs) formed by host anions and dopant cations. Our data indicate a universal limit for the ionization energy of ICTCs above which the n-doped semiconductors are air-stable.

Bipolar Blue Host Emitter with Unity Quantum Yield Allows Full Exciton Radiation in Single-Emissive-Layer Hybrid White Organic Light-Emitting Diodes.

Phosphorescence/fluorescence hybrid white organic light-emitting diodes (OLEDs) are highly appealing for solid-state lighting. One major challenge is how to fully utilize the electrically generated excitons for light output. Herein, an efficient strategy to realize full exciton radiation is successfully revealed by a judicious molecular design and suitable device engineering. A blue host emitter TP-PPI is designed and synthesized, exhibiting a near 100% photoluminescence quantum yield and a high triplet energy level, enabling high-performance blue fluorescence and sensitization of a yellow phosphorescent dopant. Full exciton radiation in hybrid white OLEDs is demonstrated with a single emitting layer formed by doping a yellow phosphor (PO-01) into TP-PPI. Near 100% exciton utilization and state-of-the-art external quantum efficiency of 27.5% are achieved with the high-efficiency blue-emitting host and an electron-trap engineered device architecture.

Understanding the Effects of NaCl, NaBr and Their Mixtures on Silver Nanowire Nucleation and Growth in Terms of the Distribution of Electron Traps in Silver Halide Crystals.

In recent years, many research groups have synthesized ultra-thin silver nanowires (AgNWs) with diameters below 30 nm by employing Cl- and Br- simultaneously in the polyol process. However, the yield of AgNWs in this method was low, due to the production of Ag nanoparticles (AgNPs) as an unwanted byproduct, especially in the case of high Br- concentration. Here, we investigated the roles of Cl- and Br- in the preparation of AgNWs and then synthesized high aspect ratio (up to 2100) AgNWs in high yield (>85% AgNWs) using a Cl- and Br- co-mediated method. We found that multiply-twinned particles (MTPs) with different critical sizes were formed and grew into AgNWs, accompanied by a small and large amount of AgNPs for the NaCl and NaBr additives, respectively. For the first time, we propose that the growth of AgNWs of different diameters and yields can be understood based on the electron trap distribution (ETD) of the silver halide crystals. For the case of Cl- and Br- co-additives, a mixed silver halide crystal of AgBr1-xClx was formed, rather than the AgBr/AgCl mixture reported previously. In this type of crystal, the ETD is uniform, which is beneficial for the synthesis of AgNWs with small diameter (30~40 nm) and high aspect ratio. AgNW transparent electrodes were prepared in air by rod coating. A sheet resistance of 48 Ω/sq and transmittance of 95% at 550 nm were obtained without any post-treatment.

Engineering Graphene Quantum Dots for Enhanced Ultraviolet and Visible Light p-Si Nanowire-Based Photodetector.

In this work, a significant improvement of the classical silicon nanowire (SiNW)-based photodetector was achieved through the realization of core-shell structures using newly designed GQDPEIs via simple solution processing. The poly(ethyleneimine) (PEI)-assisted synthesis successfully tuned both optical and electrical properties of graphene quantum dots (GQDs) to fulfill the requirements for strong yellow photoluminescence emission along with large band gap formation and the introduction of electronic states inside the band gap. The fabrication of a GQDPEI-based device was followed by systematic structural and photoelectronic investigation. Thus, the GQDPEI/SiNW photodetector exhibited a large photocurrent to dark current ratio (Iph/Idark up to ∼0.9 × 102 under 4 V bias) and a remarkable improvement of the external quantum efficiency values that far exceed 100%. In this frame, GQDPEIs demonstrate the ability to arbitrate both charge-carrier photogeneration and transport inside a heterojunction, leading to simultaneous attendance of various mechanisms: (i) efficient suppression of the dark current governed by the type I alignment in energy levels, (ii) charge photomultiplication determined by the presence of the PEI-induced electron trap levels, and (iii) broadband ultraviolet-to-visible downconversion effects.

Influence of the auxiliary acceptor on the absorption response and photovoltaic performance of dye-sensitized solar cells.

Three new dyes with a 2-(1,1-dicyanomethylene)rhodanine (IDR-I, -II, -III) electron acceptor as anchor were synthesized and applied to dye-sensitized solar cells. We varied the bridging molecule to fine tune the electronic and optical properties of the dyes. It was demonstrated that incorporation of auxiliary acceptors effectively increased the molar extinction coefficient and extended the absorption spectra to the near-infrared (NIR) region. Introduction of 2,1,3-benzothiadiazole (BTD) improved the performance by nearly 50 %. The best performance of the dye-sensitized solar cells (DSSCs) based on IDR-II reached 8.53 % (short-circuit current density (Jsc)=16.73 mA cm(-2), open-circuit voltage (Voc)=0.71 V, fill factor (FF)=71.26 %) at AM 1.5 simulated sunlight. However, substitution of BTD with a group that featured the more strongly electron-withdrawing thiadiazolo[3,4-c]pyridine (PT) had a negative effect on the photovoltaic performance, in which IDR-III-based DSSCs showed the lowest efficiency of 4.02 %. We speculate that the stronger auxiliary acceptor acts as an electron trap, which might result in fast combination or hamper the electron transfer from donor to acceptor. This inference was confirmed by electrical impedance analysis and theoretical computations. Theoretical analysis indicates that the LUMO of IDR-III is mainly localized at the central acceptor group owing to its strong electron-withdrawing character, which might in turn trap the electron or hamper the electron transfer from donor to acceptor, thereby finally decreasing the efficiency of electron injection into a TiO2 semiconductor. This result inspired us to select moderated auxiliary acceptors to improve the performance in our further study.