Multi-layered computational gene networks by engineered tristate logics.

So far, biocomputation strictly follows traditional design principles of digital electronics, which could reach their limits when assembling gene circuits of higher complexity. Here, by creating genetic variants of tristate buffers instead of using conventional logic gates as basic signal processing units, we introduce a tristate-based logic synthesis (TriLoS) framework for resource-efficient design of multi-layered gene networks capable of performing complex Boolean calculus within single-cell populations. This sets the stage for simple, modular, and low-interference mapping of various arithmetic logics of interest and an effectively enlarged engineering space within single cells. We not only construct computational gene networks running full adder and full subtractor operations at a cellular level but also describe a treatment paradigm building on programmable cell-based therapeutics, allowing for adjustable and disease-specific drug secretion logics in vivo. This work could foster the evolution of modern biocomputers to progress toward unexplored applications in precision medicine.

Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices.

Although the von Neumann architecture-based computing system has been used for a long time, its limitations in data processing, energy consumption, etc. have led to research on various devices and circuit systems suitable for logic-in-memory (LiM) computing applications. In this paper, we analyze the temperature-dependent device and circuit characteristics of the floating gate field effect transistor (FGFET) source drain barrier (SDB) and FGFET central shallow barrier (CSB) identified in previous papers, and their applicability to LiM applications is specifically confirmed. These FGFETs have the advantage of being much more compatible with existing silicon-based complementary metal oxide semiconductor (CMOS) processes compared to devices using new materials such as ferroelectrics for LiM computing. Utilizing the 32 nm technology node, the leading-edge node where the planar metal oxide semiconductor field effect transistor structure is applied, FGFET devices were analyzed in TCAD, and an environment for analyzing circuits in HSPICE was established. To seamlessly connect FGFET-based devices and circuit analyses, compact models of FGFET-SDB and -CSBs were developed and applied to the design of ternary content-addressable memory (TCAM) and full adder (FA) circuits for LiM. In addition, depression and potential for application of FGFET devices to neural networks were analyzed. The temperature-dependent characteristics of the TCAM and FA circuits with FGFETs were analyzed as an indicator of energy and delay time, and the appropriate number of CSBs should be applied.

Programmable Threshold Logic Implementations in a Memristor Crossbar Array.

In this study, we demonstrate the implementation of programmable threshold logics using a 32 × 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation.

Ternary Full Adder Designs Employing Unary Operators and Ternary Multiplexers.

The design of the Ternary Full Adders (TFA) employing Carbon Nanotube Field-Effect Transistors (CNFET) has been widely presented in the literature. To obtain the optimal design of these ternary adders, we propose two new different designs, TFA1 with 59 CNFETs and TFA2 with 55 CNFETs, that use unary operator gates with two voltage supplies (Vdd and Vdd/2) to reduce the transistor count and energy consumption. In addition, this paper proposes two 4-trit Ripple Carry Adders (RCA) based on the two proposed TFA1 and TFA2; we use the HSPICE simulator and 32 nm CNFET to simulate the proposed circuits under different voltages, temperatures, and output loads. The simulation results show the improvements of the designs in a reduction of over 41% in energy consumption (PDP), and over 64% in Energy Delay Product (EDP) compared to the best recent works in the literature.

Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits.

Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼106) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than 200 °C, which makes this AAS device compatible with monolithic 3D integration. A 1-trit ternary full adder designed with this AAS device exhibits excellent power-delay product performance (∼122 aJ) with extremely low power (∼0.15 µW, 7 times lower than the reference circuit) and lower device count than those of other ternary device candidates.

Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage.

In this study on multi-nanosheet field-effect transistor (mNS-FET)-one of the gate-all-around FETs (GAAFET) in the 3 nm technology node dimension-3D TCAD (technology computer-aided design) was used to attain optimally reduced substrate leakage from options including a punch-through-stopper (PTS) doping scheme and a bottom oxide (BO) scheme for bottom isolation, with the performance improvement being shown in the circuit-level dynamic operation using the mNS-FET. The PTS doping concentration requires a high value of >5 × 1018 cm-3 to reduce gate induced drain leakage (GIDL), regardless of the presence or absence of the bottom isolation layer. When the bottom isolation is applied together with the PTS doping scheme, the capacitance reduction is larger than the on-state current reduction, as compared to when only the PTS doping concentration is applied. The effects of such transistor characteristics on the performance and capabilities of various circuit types-such as an inverter ring oscillator (RO), a full adder (FA) circuit, and a static random-access memory (SRAM)-were assessed. For the RO, applying BO along with the PTS doping allows the operating speed to be increased by 11.3% at the same power, or alternatively enables 26.4% less power consumption at the same speed. For the FA, power can be reduced by 6.45%, energy delay product (EDP) by 21.4%, and delay by 16.8% at the same standby power when BO and PTS are both applied. Finally, for the SRAM, read current (IREAD) increased by 18.7% and bit-line write margin (BWRM) increased by 12.5% at the same standby power. Through the circuit simulations, the Case 5 model (PTS doping concentration: 5.1 × 1018 cm-3, with BO) is the optimum condition for the best device and circuit performance. These observations confirm that PTS and bottom isolation applications in mNS-FETs can be utilized to enable the superior characteristics of such transistors to translate into high performance integrated circuits.

ParAlleL: A Novel Population-Based Approach to Biological Logic Gates.

In vivo logic gates have proven difficult to combine into larger devices. Our cell-based logic system, ParAlleL, decomposes a large circuit into a collection of small subcircuits working in parallel, each subcircuit responding to a different combination of inputs. A final global output is then generated by a combination of the responses. Using ParAlleL, for the first time a completely functional 3-bit full adder and full subtractor were generated using Escherichia coli cells, as well as a calculator-style display that shows a numeric result, from 0 to 7, when the proper 3 bit binary inputs are introduced into the system. ParAlleL demonstrates the use of a parallel approach for the design of cell-based logic gates that facilitates the generation and analysis of complex processes, without the need for complex genetic engineering.

Three-Dimensional, Inkjet-Printed Organic Transistors and Integrated Circuits with 100% Yield, High Uniformity, and Long-Term Stability.

In this paper, we demonstrate three-dimensional (3D) integrated circuits (ICs) based on a 3D complementary organic field-effect transistor (3D-COFET). The transistor-on-transistor structure was achieved by vertically stacking a p-type OFET over an n-type OFET with a shared gate joining the two transistors, effectively halving the footprint of printed transistors. All the functional layers including organic semiconductors, source/drain/gate electrodes, and interconnection paths were fully inkjet-printed except a parylene dielectric which was deposited by chemical vapor deposition. An array of printed 3D-COFETs and their inverter logic gates comprising over 100 transistors showed 100% yield, and the uniformity and long-term stability of the device were also investigated. A full-adder circuit, the most basic computing unit, has been successfully demonstrated using nine NAND gates based on the 3D structure. The present study fulfills the essential requirements for the fabrication of organic printed complex ICs (increased transistor density, 100% yield, high uniformity, and long-term stability), and the findings can be applied to realize more complex digital/analogue ICs and intelligent devices.

Design and implementation of an efficient single layer five input majority voter gate in quantum-dot cellular automata.

The fundamental logical element of a quantum-dot cellular automata (QCA) circuit is majority voter gate (MV). The efficiency of a QCA circuit is depends on the efficiency of the MV. This paper presents an efficient single layer five-input majority voter gate (MV5). The structure of proposed MV5 is very simple and easy to implement in any logical circuit. This proposed MV5 reduce number of cells and use conventional QCA cells. However, using MV5 a multilayer 1-bit full-adder (FA) is designed. The functional accuracy of the proposed MV5 and FA are confirmed by QCADesigner a well-known QCA layout design and verification tools. Furthermore, the power dissipation of proposed circuits are estimated, which shows that those circuits dissipate extremely small amount of energy and suitable for reversible computing. The simulation outcomes demonstrate the superiority of the proposed circuit.

Area/latency optimized early output asynchronous full adders and relative-timed ripple carry adders.

This article presents two area/latency optimized gate level asynchronous full adder designs which correspond to early output logic. The proposed full adders are constructed using the delay-insensitive dual-rail code and adhere to the four-phase return-to-zero handshaking. For an asynchronous ripple carry adder (RCA) constructed using the proposed early output full adders, the relative-timing assumption becomes necessary and the inherent advantages of the relative-timed RCA are: (1) computation with valid inputs, i.e., forward latency is data-dependent, and (2) computation with spacer inputs involves a bare minimum constant reverse latency of just one full adder delay, thus resulting in the optimal cycle time. With respect to different 32-bit RCA implementations, and in comparison with the optimized strong-indication, weak-indication, and early output full adder designs, one of the proposed early output full adders achieves respective reductions in latency by 67.8, 12.3 and 6.1 %, while the other proposed early output full adder achieves corresponding reductions in area by 32.6, 24.6 and 6.9 %, with practically no power penalty. Further, the proposed early output full adders based asynchronous RCAs enable minimum reductions in cycle time by 83.4, 15, and 8.8 % when considering carry-propagation over the entire RCA width of 32-bits, and maximum reductions in cycle time by 97.5, 27.4, and 22.4 % for the consideration of a typical carry chain length of 4 full adder stages, when compared to the least of the cycle time estimates of various strong-indication, weak-indication, and early output asynchronous RCAs of similar size. All the asynchronous full adders and RCAs were realized using standard cells in a semi-custom design fashion based on a 32/28 nm CMOS process technology.

Quantitative transformation for implementation of adder circuits in physical systems.

Computing devices are composed of spatial arrangements of simple fundamental logic gates. These gates may be combined to form more complex adding circuits and, ultimately, complete computer systems. Implementing classical adding circuits using unconventional, or even living substrates such as slime mould Physarum polycephalum, is made difficult and often impractical by the challenges of branching fan-out of inputs and regions where circuit lines must cross without interference. In this report we explore whether it is possible to avoid spatial propagation, branching and crossing completely in the design of adding circuits. We analyse the input and output patterns of a single-bit full adder circuit. A simple quantitative transformation of the input patterns which considers the total number of bits in the input string allows us to map the respective input combinations to the correct outputs patterns of the full adder circuit, reducing the circuit combinations from a 2:1 mapping to a 1:1 mapping. The mapping of inputs to outputs also shows an incremental linear progression, suggesting its implementation in a range of physical systems. We demonstrate an example implementation, first in simulation, inspired by self-oscillatory dynamics of the acellular slime mould P. polycephalum. We then assess the potential implementation using plasmodium of slime mould itself. This simple transformation may enrich the potential for using unconventional computing substrates to implement digital circuits.

High speed capacitor-inverter based carbon nanotube full adder.

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.