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In organic-inorganic hybrid perovskite solar cells (PSCs), hydrogen defects introduce deep-level trap states, significantly influencing non-radiative recombination processes. Those defects are primarily observed in MA-PSCs rather than FA-PSCs. As a result, MA-PSCs demonstrated a lower efficiency of 23.6% compared to 26.1% of FA-PSCs. In this work, both hydrogen vacancy (VH -) and hydrogen interstitial (Hi -) defects in MAPbI3 bulk and on surfaces, respectively are investigated. i) Bulk VH - defects have dramatic impact on non-radiative recombination, with lifetime varying from 67 to 8 ns, depending on whether deprotonated MA0 are ion-bonded or not. ii) Surface H-defects exhibited an inherent self-healing mechanism through a chemical bond between MA0 and Pb2+, indicating a self-passivation effect. iii) Both VH - and Hi - defects can be mitigated by alkali cation passivation; while large cations are preferable for VH - passivation, given strong binding energy of cation/perovskite, as well as, weak band edge non-adiabatic couplings; and small cations are suited for Hi - passivation, considering the steric hindrance effect. The dual passivation strategy addressed diverse experimental outcomes, particularly in enhancing performance associated with cation selections. The dynamic connection between hydrogen defects and non-radiative recombination is elucidated, providing insights into hydrogen defect passivation essential for high-performance PSCs fabrication.
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2D perovskite passivation strategies effectively reduce defect-assisted carrier nonradiative recombination losses on the perovskite surface. Nonetheless, severe energy losses are causing by carrier thermalization, interfacial nonradiative recombination, and conduction band offset still persist at heterojunction perovskite/PCBM interfaces, which limits further performance enhancement of inverted heterojunction PSCs. Here, 5,10,15,20-tetrakis(pentafluorophenyl)porphyrin (5FTPP) is introduced between 3D/2D perovskite heterojunction and PCBM. Compared to tetraphenylporphyrin without electron-withdrawing fluoro-substituents, 5FTPP can self-assemble with PCBM at interface into donor-acceptor (D-A) complex with stronger supramolecular interaction and lower energy transfer losses. This rapid energy transfer from donor (5FTPP) to acceptor (PCBM) within femtosecond scale is demonstrated to enlarge hot carrier extraction rates and ranges, reducing thermalization losses. Furthermore, the incorporation of polystyrene derivative (PD) reinforces D-A interaction by inhibiting self-π-π stacking of 5FTPP, while fine-tuning conduction band offset and suppressing interfacial nonradiative recombination via Schottky barrier, dipole, and n-doping. Notably, the multidentate anchoring of PD-5FTPP with FA+, Pb2+, and I- mitigates the adverse effects of FA+ volatilization during thermal stress. Ultimately, devices with PD-5FTPP achieve a power conversion efficiency of 25.78% (certified: 25.36%), maintaining over 90% of initial efficiency after 1000 h of continuous illumination at the maximum power point (65 °C) under ISOS-L-2 protocol.
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Interface-induced nonradiative recombination losses at the perovskite/electron transport layer (ETL) are an impediment to improving the efficiency and stability of inverted (p-i-n) perovskite solar cells (PSCs). Tridecafluorohexane-1-sulfonic acid potassium (TFHSP) is employed as a multifunctional dipole molecule to modify the perovskite surface. The solid coordination and hydrogen bonding efficiently passivate the surface defects, thereby reducing nonradiative recombination. The induced positive dipole layer between the perovskite and ETLs improves the energy band alignment, enhancing interface charge extraction. Additionally, the strong interaction between TFHSP and the perovskite stabilizes the perovskite surface, while the hydrophobic fluorinated moieties prevent the ingress of water and oxygen, enhancing the device stability. The resultant devices achieve a power conversion efficiency (PCE) of 24.6%. The unencapsulated devices retain 91% of their initial efficiency after 1000 h in air with 60% relative humidity, and 95% after 500 h under maximum power point (MPP) tracking at 35 °C. The utilization of multifunctional dipole molecules opens new avenues for high-performance and long-term stable perovskite devices.
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The power conversion efficiency of Pb-based single-junction perovskite solar cells (PSCs) has surpassed 26%; however, the biocompatibility concerns associated with Pb pose threats to both the environment and living organisms. Consequently, the development of Pb-free PSCs is imperative. Among the various alternatives to Pb-based PSCs, Sn-based PSCs have exhibited outstanding optoelectronic properties, showing great potential for large-scale manufacturing and commercialization. Nevertheless, there remains a significant efficiency gap between Sn-based and Pb-based PSCs. The disparity primarily stems from substantial open-circuit voltage (VOC) deficits in Sn-based PSCs, typically ranging from 0.4 to 0.6 V. The main reason ofVOCdeficits is severe non-radiative recombination losses, which are caused by the uncontrolled crystallization kinetics of Sn halide perovskites and the spontaneous oxidation of Sn2+. This review summarizes the reasons forVOCdeficits in Sn-based PSCs, and the corresponding strategies to mitigate these issues. Additionally, it outlines the persistent challenges and future prospects for Sn-based PSCs, providing guidance to assist researchers in developing more efficient and stable Sn-based perovskites.
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Quasi-two-dimensional perovskite has been widely used in blue perovskite light-emitting diodes. However, the performance of these devices is still hampered by random phase distribution, nonradiative recombination, and imbalanced carrier transport. In this work, an effective strategy is proposed to mitigate these limitations by inserting lithium salts at the interfaces between the hole transport layer (HTL) and the perovskite layer. The perovskite film on the inserted Li2CO3 layer exhibits reasonable n-value redistribution, which leads to the repressive nonradiation recombination and enhanced carrier transport. Moreover, the inserted Li2CO3 layer also improves the electrical conductivity of PEDOT:PSS and hinders indium ion diffusion from the PEDOT:PSS layer to the perovskite film, which inhibits exciton quenching and nonradiative recombination loss at the HTL/perovskite interface. Taking advantage of these merits, we have successfully fabricated efficient pure-blue PeLEDs with an external quantum efficiency of 6.2% at 472 nm and a luminance of 726 cd cm-2. The restraint of nonradiative recombination at the interface offers a promising approach for efficient pure-blue PeLEDs.
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In perovskite solar cells (PSCs), defects in the interface and mismatched energy levels can damage the device performance. Improving the interface quality is an effective way to achieve efficient and stable PSCs. In this work, a multifunctional dye molecule, named ThPCyAc, was designed and synthesized to be introduced in the perovskite/HTM interface. On one hand, various functional groups on the acceptor unit can act as Lewis base to reduce defect density and suppress nonradiative combinations. On the other hand, the stepwise energy-level alignment caused by ThPCyAc decreases the accumulation of interface carriers for facilitating charge extraction and transmission. Therefore, based on the ThPCyAc molecule, the devices exhibit elevated open-circuit voltage and fill factor, resulting in the best power conversion efficiency (PCE) of 23.16%, outperforming the control sample lacking the interface layer (PCE = 21.49%). Excitingly, when attempting to apply it as a self-assembled layer in inverted devices, ThPCyAc still exhibits attractive behavior. It is worth noting that these results indicate that dye molecules have great potential in developing multifunctional interface materials to obtain higher-performance PSCs.
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Due to the good balance of efficiency and stability, CsPbI2Br perovskite solar cells (PSCs) recently have attracted widespread attention. However, the improvement in photovoltaic performance for CsPbI2Br PSCs was mainly limited by massive defects and unmatched energy levels. Surface modification is the most convenient and effective strategy to decrease defect densities of perovskite films. Herein, we deposited rubidium fluoride (RbF) onto the surface of CsPbI2Br perovskite films by spin-coating. The numerous defects could be significantly passivated by RbF, resulting in suppressed nonradiative recombination. Furthermore, the CsPbI2Br perovskite film after RbF treatment exhibits a deeper Fermi level, and an additional built-in electric field forms to promote charge transport. Consequently, the champion device achieves a high efficiency of 10.82% with an improved VOC of 1.14 V, and it also exhibits excellent stability after long-term storage. This work offers a simple and effective approach to enhance the photovoltaic performance and stability of PSCs for broader applications in the future.
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Lead halide perovskites with superior optoelectrical properties are emerging as a class of excellent materials for applications in solar cells and light-emitting devices. However, perovskite films often exhibit abundant intrinsic defects, which can limit the efficiency of perovskite-based optoelectronic devices by acting as carrier recombination centers. Thus, an understanding of defect chemistry in lead halide perovskites assumes a prominent role in further advancing the exploitation of perovskites, which, to a large extent, is performed by relying on first-principles calculations. However, the complex defect structure, strong anharmonicity, and soft lattice of lead halide perovskites pose challenges to defect studies. In this perspective, on the basis of briefly reviewing the current knowledge concerning computational studies on defects, this work concentrates on addressing the unsolved problems and proposing possible research directions in future. This perspective particularly emphasizes the indispensability of developing advanced approaches for deeply understanding the nature of defects and conducting data-driven defect research for designing reasonable strategies to further improve the performance of perovskite applications. Finally, this work highlights that theoretical studies should pay more attention to establishing close and clear links with experimental investigations to provide useful insights to the scientific and industrial communities.
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The large open circuit voltage (VOC) loss is currently one of the main obstacles to achieving efficient organic solar cells (OSCs). In this study, the ternary OSCs comprising PM6:BTP-eC9:IT-4F demonstrate a superior efficiency of 18.2 %. Notably, the utilization of the medium bandgap acceptor IT-4F as the third component results in an exceptionally low nonradiative recombination energy loss of 0.28â V. The desirable energy level cascade is formed among PM6, BTP-eC9, and IT-4F due to the low-lying HOMO and LUMO energy levels of IT-4F. More importantly, the VOC of PM6:BTP-eC9:IT-4F OSCs can reach as high as 0.86â V, which is higher than both binary OSCs without sacrificing JSC and FF. Besides, this strategy proved that IT-4F can not only broaden the absorption range but also work as a morphology modifier in PM6:BTP-eC9:IT-4F OSCs, and there also exists efficient energy transfer between BTP-eC9 and IT-4F. This result provides a promising way to suppress the nonradiative recombination energy loss and realize higher VOC than the two binary OSCs in ternary OSCs to obtain high power conversion efficiencies.
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Organic ammonium salts are widely used for surface passivation to enhance the photovoltaic (PV) performance and stability of perovskite solar cells (PSCs). However, the protic nature of ammonium units results in the quick degradation of perovskites due to the hydrogen bonding interaction with water molecules. Recently, organo-sulfur compounds have attracted growing interest as passivation layers on three-dimensional perovskites due to their moisture-resistive behavior. Herein, trimethylsulfonium iodide (TMSI), an aprotic S-based organic compound, is employed for surface modification of methylammonium lead iodide-based PSCs to impede moisture penetration, improve charge transfer, and passivate surface defects. The TMSI effectively passivates uncoordinated Pb through Pb···S interactions, and the optimized PSC exhibits a power conversion efficiency (PCE) of 21.03% with an open-circuit voltage of ca. 1.13 V under one-sun illumination, while it reached up to 37.58 and 37.69% under low-intensity indoor illuminations, 1000 and 2000 lx with LED 5000 K, respectively. TMSI-treated cells display enhanced device stability by retaining 92.7% of their initial PCE after 50 days of storage in ambient conditions. This study provides a novel and effective surface reconstruction strategy with aprotic materials to improve PV performance and device stability in PSCs.
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Antimony triselenide (Sb2 Se3 ) has possessed excellent optoelectronic properties and has gained interest as a light-harvesting material for photovoltaic technology over the past several years. However, the severe interfacial and bulk recombination obviously contribute to significant carrier transport loss thus leading to the deterioration of power conversion efficiency (PCE). In this work, buried interface and heterojunction engineering are synergistically employed to regulate the film growth kinetic and optimize the band alignment. Through this approach, the orientation of the precursor films is successfully controlled, promoting the preferred orientational growth of the (hk1) of the Sb2 Se3 films. Besides, interfacial trap-assisted nonradiative recombination loss and heterojunction band alignment are successfully minimized and optimized. As a result, the champion device presents a PCE of 9.24% with short-circuit density (JSC ) and fill factor (FF) of 29.47 mA cm-2 and 63.65%, respectively, representing the highest efficiency in sputtered-derived Sb2 Se3 solar cells. This work provides an insightful prescription for fabricating high-quality Sb2 Se3 thin film and enhancing the performance of Sb2 Se3 solar cells.
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Wide-bandgap (WBG) perovskite solar cells hold tremendous potential for realizing efficient tandem solar cells. However, nonradiative recombination and carrier transport losses occurring at the perovskite/electron-selective contact (e.g. C60 ) interface present significant obstacles in approaching their theoretical efficiency limit. To address this, a sequential interface engineering (SIE) strategy that involves the deposition of ethylenediamine diiodide (EDAI2 ) followed by sequential deposition of 4-Fluoro-Phenethylammonium chloride (4F-PEACl) is implemented. The SIE technique synergistically narrows the conduction band offset and reduces recombination velocity at the perovskite/C60 interface. The best-performing WBG perovskite solar cell (1.67 eV) delivers a power conversion efficiency (PCE) of 21.8% and an impressive open-circuit voltage of 1.262 V. Moreover, through integration with double-textured silicon featuring submicrometer pyramid structures, a stabilized PCE of 29.6% is attained for a 1 cm2 monolithic perovskite/silicon tandem cell (certified PCE of 29.0%).
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Severe nonradiative recombination and open-circuit voltage loss triggered by high-density interface defects greatly restrict the continuous improvement of Sn-based perovskite solar cells (Sn-PVSCs). Herein, a novel amphoteric semiconductor, O-pivaloylhydroxylammonium trifluoromethanesulfonate (PHAAT), is developed to manage interface defects and carrier dynamics of Sn-PVSCs. The amphiphilic ionic modulators containing multiple Lewis-base functional groups can synergistically passivate anionic and cationic defects while coordinating with uncoordinated Sn2+ to compensate for surface charge and alleviate the Sn2+ oxidation. Especially, the sulfonate anions raise the energy barrier of surface oxidation, relieve lattice distortion, and inhibit nonradiative recombination by passivating Sn-related and I-related deep-level defects. Furthermore, the strong coupling between PHAAT and Sn perovskite induces the transition of the surface electronic state from p-type to n-type, thus creating an extra back-surface field to accelerate electron extraction. Consequently, the PHAAT-treated device exhibits a champion efficiency of 13.94% with negligible hysteresis. The device without any encapsulation maintains 94.7% of its initial PCE after 2000 h of storage and 91.6% of its initial PCE after 1000 h of continuous illumination. This work provides a reliable strategy to passivate interface defects and construct p-n homojunction to realize efficient and stable Sn-based perovskite photovoltaic devices.
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Constructing 3D/2D perovskite heterojunction is a promising approach to integrate the benefits of high efficiency and superior stability in perovskite solar cells (PSCs). However, in contrast to n-i-p architectural PSCs, the p-i-n PSCs with 3D/2D heterojunction have serious limitations in achieving high-performance as they suffer from a large energetic mismatch and electron extraction energy barrier from a 3D perovskite layer to a 2D perovskite layer, and serious nonradiative recombination at the heterojunction. Here a strategy of incorporating a thin passivating dipole layer (PDL) onto 3D perovskite and then depositing 2D perovskite without dissolving the underlying layer to form an efficient 3D/PDL/2D heterojunction is developed. It is revealed that PDL regulates the energy level alignment with the appearance of interfacial dipole and strongly interacts with 3D perovskite through covalent bonds, which eliminate the energetic mismatch, reduce the surface defects, suppress the nonradiative recombination, and thus accelerate the charge extraction at such electron-selective contact. As a result, it is reported that the 3D/PDL/2D junction p-i-n PSCs present a power conversion efficiency of 24.85% with robust stability, which is comparable to the state-of-the-art efficiency of the 3D/2D junction n-i-p devices.
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Blue quantum dot (QD) light-emitting diodes (QLEDs) exhibit unsatisfactory operational stability and electroluminescence (EL) properties due to severe nonradiative recombination induced by large numbers of dangling bond defects and charge imbalance in QD. Herein, dipolar aromatic amine-functionalized molecules with different molecular polarities are employed to regulate charge transport and passivate interfacial defects between QD and the electron transfer layer (ETL). The results show that the stronger the molecular polarity, especially with the -CF3 groups possessing a strong electron-withdrawing capacity, the more effective the defect passivation of S and Zn dangling bonds at the QD surface. Moreover, the dipole interlayer can effectively reduce electron injection into QD at high current density, enhancing charge balance and mitigating Joule heat. Finally, blue QLEDs exhibit a peak external quantum efficiency (EQE) of 21.02% with an operational lifetime (T50 at 100 cd m-2) exceeding 4000 h.
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Wide-bandgap (WBG) perovskites have attracted considerable attention due to their adjustable bandgap properties, making them ideal candidates for top subcells in tandem solar cells (TSCs). However, WBG perovskites often face challenges such as inhomogeneous crystallization and severe nonradiative recombination loss, leading to high open-circuit voltage (VOC ) deficits and poor stability. To address these issues, a multifunctional phenylethylammonium acetate (PEAAc) additive that enhances uniform halide phase distribution and reduces defect density in perovskite films by regulating the mixed-halide crystallization rate, is introduced. This approach successfully develops efficient WBG perovskite solar cells (PSCs) with reduced VOC loss and enhanced stability. By applying this universal strategy to the FAMACsPb(I1- x Brx )3 system with a range of bandgaps of 1.73, 1.79, 1.85, and 1.92 eV, power conversion efficiencies (PCE) of 21.3%, 19.5%, 18.1%, and 16.2%, respectively, are attained. These results represent some of the highest PCEs reported for the corresponding bandgaps. Furthermore, integrating WBG perovskite with organic photovoltaics, an impressive PCE of over 24% for two-terminal perovskite/organic TSCs, with a record VOC of ≈ 2.2 V is achieved. This work establishes a foundation for addressing phase separation and inhomogeneous crystallization in Br-rich perovskite components, paving the way for the development of high-performance WBG PSCs and TSCs.
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The attainment of a well-crystallized photo-absorbing layer with minimal defects is crucial for achieving high photovoltaic performance in polycrystalline solar cells. However, in the case of perovskite solar cells (PSCs), precise control over crystallization and elemental distribution through solution processing remains a challenge. In this study, we propose the use of a multifunctional molecule, α-amino-γ-butyrolactone (ABL), as a modulator to simultaneously enhance crystallization and passivate defects, thereby improving film quality and deactivating nonradiative recombination centers in the perovskite absorber. The Lewis base groups present in ABL facilitate nucleation, leading to enhanced crystallinity, while also retarding crystallization. Additionally, ABL effectively passivates Pb2+ dangling bonds, which are major deep-level defects in perovskite films. This passivation process reduces recombination losses, promotes carrier transfer and extraction, and further improves efficiency. Consequently, the PSCs incorporating the ABL additive exhibit an increase in conversion efficiency from 18.30% to 20.36%, along with improved long-term environmental stability. We believe that this research will contribute to the design of additive molecular structures and the engineering of components in perovskite precursor colloids.
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Recently, two-dimensional (2D) transition metal carbides/nitrides (MXenes) find applications in perovskite solar cells (PSCs), due to their high conductivity, tunable electronic structures, and rich surface chemistry, etc. However, the integration of 2D MXenes into PSCs is limited by their large lateral sizes and relatively-small surface volume ratios, and the roles of MXenes in PSCs are still ambiguous. In this paper, zero-dimensional (0D) MXene quantum dots (MQDs) with an average size of 2.7 nm are obtained through clipping step by step combining a chemical etching and a hydrothermal reaction, which display rich terminals (i.e., -F, -OH, -O) and unique optical properties. The 0D MQDs incorporated into SnO2 electron transport layers (ETLs) of PSCs exhibit multifunction: 1) increasing the electrical conductivity of SnO2, 2) promoting better alignments of energy band positions at the perovskite/ETL interface, 3) improving the film quality of atop polycrystalline perovskite. Particularly, the MQDs not only tightly bond with the Sn atom for decreasing the defects of SnO2, but also interact with the Pb2+ of perovskite. As a result, the defect density of PSCs is significantly decreased from 5.21 × 1021 to 6.4 × 1020 cm-3, leading to enhanced charge transport and reduced nonradiative recombination. Furthermore, the power conversion efficiency (PCE) of PSCs is substantially improved from 17.44% to 21.63% using the MQDs-SnO2 hybrid ETL compared with the SnO2 ETL. Besides, the stability of the MQDs-SnO2-based PSC is greatly enhanced, with only ï½4% degradation of the initial PCE after storage in ambient condition (25 °C, RH: 30-40%) for 1128 h, as compared to that of the reference device with a rapid degradation of ï½60% of initial PCE after 460 h. And MQDs-SnO2-based PSC also presents higher thermal stability than SnO2-based device with continuous heating for 248 h at 85 °C. The unique MQDs exhibited in this work might also find other exciting applications such as light-emitting diodes, photodetectors, and fluorescent probes.
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Graphene quantum dot (GQD)@cellulose nanocomposites possess optoelectronic properties of interest for photovoltaic applications. However, the optoelectronic properties related to the shapes and edge types of GQDs have not been fully explored. In the present work, we investigate the effects of carboxylation on the energy alignment and charge separation dynamics at the interface of GQD@cellulose nanocomposites using density functional theory calculations. Our results show that the GQD@cellulose nanocomposites composed of hexagonal GQDs with armchair edges exhibit better photoelectric performance than those composed of other types of GQDs. Carboxylation stabilizes the energy level of the highest occupied molecular orbital (HOMO) of the triangular GQDs with armchair edges but destabilizes the HOMO energy level of cellulose, resulting in hole transfer from the GQDs to cellulose upon photoexcitation. However, the calculated hole transfer rate is lower than the nonradiative recombination rate because excitonic effects dominate the dynamics of charge separation in GQD@cellulose nanocomposites.
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It is commonly believed that the spontaneous p-doping in Sn-based perovskites is caused by Sn vacancies. By performing rigorous first-principles calculations for a prototypical Sn-based perovskite CsSnI3 , we reveal that, in fact, the defects dominating p-doping are Cs vacancies. The reason that adding extra Sn2+ could reduce p-doping is that Cs and Sn present the same changing trend in terms of chemical potentials, and thus inhibiting the formation of Sn vacancies will also limit the formation of Cs vacancies. Moreover, we show that I vacancies are the dominant nonradiative recombination centers, and can result in sizable nonradiative losses, which explains why the experimentally measured carrier lifetime is only a few nanoseconds even if p-doping is suppressed. This work provides new insights into the origins of p-doping and nonradiative recombination in CsSnI3 , and suggests that minimizing the formation of Cs and I vacancies is critical to realizing the best device performance.