BiVO4 Photoanode with NiV2O6 Back Contact Interfacial Layer for Improved Hole-Diffusion Length and Photoelectrochemical Water Oxidation Activity.

The short hole diffusion length (HDL) and high interfacial recombination are among the main drawbacks of semiconductor-based solar energy systems. Surface passivation and introducing an interfacial layer are recognized for enhancing HDL and charge carrier separation. Herein, we introduced a facile recipe to design a pinholes-free BiVO4 photoanode with a NiV2O6 back contact interfacial (BCI) layer, marking a significant advancement in the HDL and photoelectrochemical activity. The fabricated BiVO4 photoanode with NiV2O6 BCI layer exhibits a 2-fold increase in the HDL compared to pristine BiVO4. Despite this improvement, we found that the front surface recombination still hinders the water oxidation process, as revealed by photoelectrochemical (PEC) studies employing Na2SO3 electron donors and by intensity-modulated photocurrent spectroscopy measurements. To address this limitation, the surface of the NiV2O6/BiVO4 photoanode was passivated with a cobalt phosphate electrocatalyst, resulting in a dramatic enhancement in the PEC performance. The optimized photoanode achieved a stable photocurrent density of 4.8 mA cm-2 at 1.23 VRHE, which is 12-fold higher than that of the pristine BiVO4 photoanode. Density Functional Theory (DFT) simulations revealed an abrupt electrostatic potential transition at the NiV2O6/BiVO4 interface with BiVO4 being more negative than NiV2O6. A strong built-in electric field is thus generated at the interface and drifts photogenerated electrons toward the NiV2O6 BCI layer and photogenerated holes toward the BiVO4 top layer. As a result, the back-surface recombination is minimized, and ultimately, the HDL is extended in agreement with the experimental findings.

Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction.

The enhanced Coulomb interaction in two-dimensional semiconductors leads to tightly bound electron-hole pairs known as excitons. The large binding energy of excitons enables the formation of Rydberg excitons with high principal quantum numbers (n), analogous to Rydberg atoms. Rydberg excitons possess strong interactions among themselves as well as sensitive responses to external stimuli. Here, we probe Rydberg exciton resonances through photocurrent spectroscopy in a monolayer WSe2 p-n junction formed by a split-gate geometry. We show that an external in-plane electric field not only induces a large Stark shift of Rydberg excitons up to quantum principal number 3 but also mixes different orbitals and brightens otherwise dark states such as 3p and 3d. Our study provides an exciting platform for engineering Rydberg excitons for new quantum states and quantum sensing.

Optoelectronic Readout of Single Er Adatom's Electronic States Adsorbed on the Si(100) Surface at Low Temperature (9 K).

Integrating nanoscale optoelectronic functions is vital for applications such as optical emitters, detectors, and quantum information. Lanthanide atoms show great potential in this endeavor due to their intrinsic transitions. Here, we investigate Er adatoms on Si(100)-2×1 at 9 K using a scanning tunneling microscope (STM) coupled to a tunable laser. Er adatoms display two main adsorption configurations that are optically excited between 800 and 1200 nm while the STM reads the resulting photocurrents. Our spectroscopic method reveals that various photocurrent signals stem from the bare silicon surface or Er adatoms. Additional photocurrent peaks appear as the signature of the Er adatom relaxation, triggering efficient dissociation of nearby trapped excitons. Calculations using density functional theory with spin-orbit coupling correction highlight the origin of the observed photocurrent peaks as specific 4f→4f or 4f→5d transitions. This spectroscopic technique can facilitate optoelectronic analysis of atomic and molecular assemblies by offering insight into their intrinsic quantum properties.

Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors.

In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.

Probing Intra-Gap States Mediated Charge Dynamics of Rh-Doped Rutile TiO2 Photocatalyst by Light-Modulated Photocurrent Spectroscopies.

The intra-gap states that are introduced into a semiconducting photocatalyst via dopants and other defects have significant implications on the transport dynamics of photoexcited electrons and holes during an aqueous light-driven reaction. In this work, mechanistic understanding of Rh-doped rutile, a promising photocatalyst for hydrogen production from water, is gained by systematic assessment combining intensity-modulated photocurrent spectroscopy with sub-gap excitations and alternating-current photocurrent spectroscopy. These operando techniques not only help in discovering a new electronic transport path in Rh-rutile via surface Rh4+ species and elucidating complex interaction between electrolyte molecules and semiconductors, but also underscore the potential of utilizing multiple sub-gap excitations synergistically. This combination offers a powerful tool for acquiring insight into photo-physical and photo-chemical behaviors of photo(electro)catalysts with intra-gap states.

Anodic Oxidation of Tungsten under Illumination-Multi-Method Characterization and Modeling at the Molecular Level.

Tungsten oxide has received considerable attention as photo-anode in photo-assisted water splitting due to its considerable advantages such as significant light absorption in the visible region, good catalytic properties, and stability in acidic and oxidative conditions. The present paper is a first step in a detailed study of the mechanism of porous WO3 growth via anodic oxidation. In-situ electrochemical impedance spectroscopy (EIS) and intensity modulated photocurrent spectroscopy (IMPS) during oxidation of W illuminated with UV and visible light are employed to study the ionic and electronic processes in slightly acidic sulfate-fluoride electrolytes and a range of potentials 4-10 V. The respective responses are discussed in terms of the influence of fluoride addition on ionic and electronic process rates. A kinetic model is proposed and parameterized via regression of experimental data to the EIS and IMPS transfer functions.

Surface-Mediated Charge Transfer of Photogenerated Carriers in Diamond.

Solvated electrons are highly reductive chemical species whose chemical properties remain largely unknown. Diamond materials are proposed as a promising emitter of solvated electrons and visible light excitation would enable solar-driven CO2 or N2 reductions reactions in aqueous medium. But sub-bandgap excitation remains challenging. In this work, the role of surface states on diamond materials for charge separation and emission in both gaseous and aqueous environments from deep UV to visible light excitation is elucidated. Four different X-ray and UV-vis spectroscopy methods are applied to diamond materials with different surface termination, doping and crystallinity. Surface states are found to dominate sub-bandgap charge transfer. However, the surface charge separation is drastically reduced for boron-doped diamond due to a very high density of bulk defects. In a gaseous atmosphere, the oxidized diamond surface maintains a negative electron affinity, allowing charge emission, due to remaining hydrogenated and hydroxylated groups. In an aqueous electrolyte, a photocurrent for illumination down to 3.5 eV is observed for boron-doped nanostructured diamond, independent of the surface termination. This study opens new perspectives on photo-induced interfacial charge transfer processes from metal-free semiconductors such as diamonds.

Optoelectronic and Optomechanical Properties of Few-Atomic-Layer Black Phosphorus Nanoflakes as Revealed by In Situ TEM.

The optoelectronic signatures of free-standing few-atomic-layer black phosphorus nanoflakes are analyzed by in situ transmission electron microscopy (TEM). As compared to other 2D materials, the band gap of black phosphorus (BP) is related directly to multiple thicknesses and can be tuned by nanoflake thickness and strain. The photocurrent measurements with the TEM show a stable response to infrared light illumination and change of nanoflakes band gap with deformation while pressing them between two electrodes assembled in the microscope. The photocurrent spectra of an 8- and a 6-layer BP nanoflake samples are comparatively measured. Density functional theory (DFT) calculations are performed to identify the band structure changes of BP during deformations. The results should help to find the best pathways for BP smart band gap engineering via tuning the number of material atomic layers and programmed deformations to promote future optoelectronic applications.

Revealing the enhanced photoelectrochemical water oxidation activity of Fe-based metal-organic polymer-modified BiVO4 photoanode.

Metal-organic polymers (MOPs) can enhance the photoelectrochemical (PEC) water oxidation performance of BiVO4 photoanodes, but their PEC mechanisms have yet to be comprehended. In this work, we constructed an active and stable composite photoelectrode by overlaying a uniform MOP on the BiVO4 surface using Fe2+ as the metal ions and 2,5-dihydroxyterephthalic acid (DHTA) as ligand. Such modification on the BiVO4 surface yielded a core-shell structure that could effectively enhance the PEC water oxidation activity of the BiVO4 photoanode. Our intensity-modulated photocurrent spectroscopy analysis revealed that the MOP overlayer could concurrently reduce the surface charge recombination rate constant (ksr) and enhance the charge transfer rate constant (ktr), thus accelerating water oxidation activity. These phenomena can be ascribed to the passivation of the surface that inhibits the recombination of the charge carrier and the MOP catalytic layer that improves the hole transfer. Our rate law analysis also demonstrated that the MOP coverage shifted the reaction order of the BiVO4 photoanode from the third-order to the first-order, resulting in a more favorable rate-determining step where only one hole accumulation is required to overcome water oxidation. This work provides new insights into the reaction mechanism of MOP-modified semiconductor photoanodes.

Intensity Modulated Photocurrent Microspectrosopy for Next Generation Photovoltaics.

In this report, a large-area laser beam induced current microscope that has been adapted to perform intensity modulated photocurrent spectroscopy (IMPS) in an imaging mode is described. Microscopy-based IMPS method provides a spatial resolution of the frequency domain response of the solar cell, allowing correlation of the optoelectronic response with a particular interface, bulk material, specific transport layer, or transport parameter. The system is applied to study degradation effects in back-contact perovskite cells where it is found to readily differentiate areas based on their markedly different frequency response. Using the diffusion-recombination model, the IMPS response is modeled for a sandwich structure and extended for the special case of lateral diffusion in a back-contact cell. In the low-frequency limit, the model is used to calculate spatial maps of the carrier ambipolar diffusion length. The observed frequency response of IMPS images is then discussed.

Anomalous Photocurrent Reversal Due to Hole Traps in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes.

The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy. We observed anomalous photocurrent reversal and its temporal recovery in AlGaN-based DUV LEDs as the wavelength of illuminating light varied from DUV to visible. The wavelength-dependent photocurrent measurements were performed on 265 nm-emitting DUV LEDs under zero-bias conditions. Sharp near-band-edge (~265 nm) absorption was observed in addition to broad (300-800 nm) visible-range absorption peaks in the photocurrent spectrum, while the current direction of these two peaks were opposite to each other. In addition, the current direction of the photocurrent in the visible wavelength range was reversed when a certain forward bias was applied. This bias-induced current reversal displayed a slow recovery time (~6 h) when the applied forward voltage was removed. Furthermore, the recovery time showed strong temperature dependency and was faster as the sample temperature increased. This result can be consistently explained by the presence of hole traps at the electron-blocking layer and the band bending caused by piezoelectric polarization fields. The activation energy of the defect state was calculated to be 279 meV using the temperature dependency of the recovery time.

Highly Nonlinear Biexcitonic Photocurrent from Ultrafast Interlayer Charge Transfer.

Strong Coulomb interactions in monolayer semiconductors allow them to host optically active large many-body states, such as the five-particle state, charged biexciton. Strong nonlinear light absorption by the charged biexciton under spectral resonance, coupled with its charged nature, makes it intriguing for nonlinear photodetection─an area that is hitherto unexplored. Using the high built-in vertical electric field in an asymmetrically designed few-layer graphene encapsulated 1L-WS2 heterostructure, here we report a large, highly nonlinear photocurrent arising from the strong absorption by two charged biexciton species under zero external bias (self-powered mode). Time-resolved measurement reveals that the generated charged biexcitons transfer to the few-layer graphene in a time scale of sub-5 ps, indicating an ultrafast intrinsic limit of the photoresponse. By using single- and two-color photoluminescence excitation spectroscopy, we show that the two biexcitonic peaks originate from bright-dark and bright-bright exciton-trion combinations. Such innate nonlinearity in the photocurrent due to its biexcitonic origin, coupled with the ultrafast response due to swift interlayer charge transfer, exemplifies the promise of manipulating many-body effects in monolayers toward viable optoelectronic applications.

Tailoring Spectrally Flat Infrared Photodetection with Thickness-Controlled Nanocrystalline Graphite.

Graphene, a zero-gap semiconductor, absorbs 2.3% of incident photons in a wide wavelength range as a free-standing monolayer, whereas 50% is expected for ∼90 layers. Adjusting the layer number allows the tailoring of the photoresponse; however, controlling the thickness of multilayer graphene remains challenging on the wafer scale. Nanocrystalline graphene or graphite (NCG) can instead be grown with controlled thickness. We have fabricated photodetectors from NCG that are spectrally flat in the near-infrared to short-wavelength infrared region by tailoring the layer thicknesses. Transfer matrix simulations were used to determine the NCG thickness for maximum light absorption in the NCG layer on a silicon substrate. The extrinsic and intrinsic photoresponse was determined from 1100 to 2100 nm using chromatic aberration-corrected photocurrent spectroscopy. Diffraction-limited hyperspectral photocurrent imaging shows that the biased photoresponse is unipolar and homogeneous across the device area, whereas the short-circuit photoresponse gives rise to positive and negative photocurrents at the electrodes. The intrinsic photoresponses are wavelength-independent, indicative of bolometric and electrothermal photodetection.

The Low-Temperature Photocurrent Spectrum of Monolayer MoSe2: Excitonic Features and Gate Voltage Dependence.

Two-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thoroughly characterized over the past decade by means of photoluminescence spectroscopy, transmittance spectroscopy, and related techniques; however, the spectral dependence of their electronic response is still not fully characterized. In this work, we investigate the electronic response of exciton transitions in monolayer MoSe2 via low-temperature photocurrent spectroscopy. We identify the spectral features associated with the main exciton and trion transitions, with spectral bandwidths down to 15 meV. We also investigate the effect of the Fermi level on the position and intensity of excitonic spectral features, observing a very strong modulation of the photocurrent, which even undergoes a change in sign when the Fermi level crosses the charge neutrality point. Our results demonstrate the unexploited potential of low-temperature photocurrent spectroscopy for studying excitons in low-dimensional materials, and provide new insight into excitonic transitions in 1L-MoSe2.

Optomechanical Properties of MoSe2 Nanosheets as Revealed by In Situ Transmission Electron Microscopy.

Free-standing few-layered MoSe2 nanosheet stacks optoelectronic signatures are analyzed by using light compatible in situ transmission electron microscopy (TEM) utilizing an optical TEM holder allowing for the simultaneous mechanical deformation, electrical probing and light illumination of a sample. Two types of deformation, namely, (i) bending of nanosheets perpendicular to their basal atomic planes and (ii) edge deformation parallel to the basal atomic planes, lead to two distinctly different optomechanical performances of the nanosheet stacks. The former deformation induces a stable but rather marginal increase in photocurrent, whereas the latter mode is prone to unstable nonsystematic photocurrent value changes and a red-shifted photocurrent spectrum. The experimental results are verified by ab initio calculations using density functional theory (DFT).

Unique Degradation Signatures of Organic Solar Cells with Nonfullerene Electron Acceptors.

We investigate the degradation phenomena of organic solar cells based on nonfullerene electron acceptors (NFA) using intensity-modulated photocurrent spectroscopy (IMPS). Devices composed of NIR absorbing blends of a polymer (PTB7) and NFA molecules (COi8DFIC) were operated in air for varying periods of time that display unusual degradation trends. Light aging (e.g., ∼3 days) results in a characteristic first quadrant (positive phase shifts) degradation feature in IMPS Nyquist (Bode) plots that grow in amplitude and frequency with increasing excitation intensity and then subsequently turns over and vanishes. By contrast, devices aged and operated in air for longer times (>5 days) display poor photovoltaic performance and have a dominant first quadrant IMPS component that grows nonlinearly with excitation intensity. We analyze these degradation trends using a simple model with descriptors underlying the first quadrant feature (i.e., trap lifetime and occupancy). The results indicate that the quasi first-order recombination rate constant, krec, is significantly slower in addition to lower trap densities in devices exhibiting light aging effects that are overcome by increasing carrier densities (viz. excitation intensity). By contrast, larger trap densities and distributions coupled with larger krec values are found to be responsible for the continuous growth of the first quadrant with light intensity. We believe that defect formation and charge recombination at device contact interfaces is chiefly responsible for performance degradation, which offers several directions for materials and device optimization strategies to minimize long-term detrimental factors.

Fiber-coupled light-emitting diodes (LEDs) as safe and convenient light sources for the characterization of optoelectronic devices.

Optoelectronic device characterization requires to probe the electrical transport changes upon illumination with light of different incident powers, wavelengths, and modulation frequencies. This task is typically performed using laser-based or lamp + monochromator-based light sources, that result complex to use and costly to implement. Here, we describe the use of multimode fiber-coupled light-emitting diodes (LEDs) as a simple, low-cost alternative to more conventional light sources, and demonstrate their capabilities by extracting the main figures of merit of optoelectronic devices based on monolayer MoS 2, i.e. optical absorption edge, photoresponsivity, response time and detectivity. The described light sources represent an excellent alternative for performing optoelectronic characterization experiments on a limited budget.

Giant Valley-Polarized Rydberg Excitons in Monolayer WSe2 Revealed by Magneto-photocurrent Spectroscopy.

A strong Coulomb interaction could lead to a strongly bound exciton with high-order excited states, similar to the Rydberg atom. The interaction of giant Rydberg excitons can be engineered for a correlated ordered exciton array with a Rydberg blockade, which is promising for realizing quantum simulation. Monolayer transition metal dichalcogenides, with their greatly enhanced Coulomb interaction, are an ideal platform to host the Rydberg excitons in two dimensions. Here, we employ helicity-resolved magneto-photocurrent spectroscopy to identify Rydberg exciton states up to 11s in monolayer WSe2. Notably, the radius of the Rydberg exciton at 11s can be as large as 214 nm, orders of magnitude larger than the 1s exciton. The giant valley-polarized Rydberg exciton not only provides an exciting platform to study the strong exciton-exciton interaction and nonlinear exciton response but also allows the investigation of the different interplay between the Coulomb interaction and Landau quantization, tunable from a low- to high-magnetic-field limit.

Modulated Photocurrent Spectroscopy Study of the Electronic Transport Properties of Working Organic Photovoltaics: Degradation Analysis.

Electronic transport measurement using modulated photocurrent (MPC) spectroscopy is demonstrated herein in working organic photovoltaics (OPVs) before and after AM1.5G irradiation. OPVs with bulk heterojunction (BHJ) using prototypical donor and acceptor materials, poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1-2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] = hieno [3-4-b]thiophenediyl]] (PTB7) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), were fabricated. The OPVs had inverted structures (BHJs are formed on transparent conductive oxide substrates). The photovoltaic performance of PTB7:PC71BM OPVs was characterized and the best power conversion efficiency was obtained at PTB7 content of 40 wt%. Electron and hole mobility were determined with MPC spectroscopy in PTB7:PC71BM OPVs and were well balanced at PTB7 content of 40 wt%. Degradation of the photovoltaic performance of PTB7:PC71BM OPVs with PTB7 content of 40 wt% caused by AM1.5G irradiation was studied. MPC spectroscopy showed that the well-balanced mobility was not affected by AM1.5G irradiation. The degradation of OPVs was not due to changes in the electronic transport properties, but mainly to the reduced short circuit current (Jsc) and fill factor (FF). The origin of this reduction is discussed.

Unveiling the Effects of Nanostructures and Core Materials on Charge-Transport Dynamics in Heterojunction Electrodes for Photoelectrochemical Water Splitting.

Understanding the photogenerated charge-transport dynamics of metal oxide electrodes is the key to providing a strategy for practical improvement in the photoelectrochemical reaction activity. Here, we analyze the electron transport of a 3D bicontinuous SnO2/BiVO4 nanostructured photoelectrode by intensity-modulated photocurrent spectroscopy. We compare this electrode with 3D WO3/BiVO4 and planar-type bilayer SnO2/BiVO4 electrodes. In the results, we observe an order of magnitude faster electron transport in the 3D electrodes relative to the bilayer electrode. Moreover, we observe trap-limited transport on widely applied WO3/BiVO4 electrodes but confirm rapid trap-free transport on 3D SnO2/BiVO4. We also characterize the effect of electron transport on the water-splitting reaction. The electron-transport rate is directly related to the charge-separation efficiency in the water-splitting reaction. The fast transport time of the 3D SnO2/BiVO4 leads to the achievement of a significantly higher charge separation efficiency of 94%.