RESUMO
Regulation of charge transport at the molecular level is essential to elucidating the kinetics of junction photoelectrodes across the heterointerface for photoelectrochemical (PEC) water oxidation. Herein, an integrated photoanode as the prototype was constructed by use of a 5,10,15,20-tetrakis(4-carboxyphenyl) porphyrin-cobalt molecule (CoTCPP) and ZnO on hematite (α-Fe2O3) photoanode. CoTCPP molecules serve as a typical hole transport layer (HTL), accelerating the transport of the photogenerated holes to oxygen evolution cocatalysts (OECs). Meanwhile, ZnO as the surface passivation layer (SPL) can passivate the interfacial state and reduce the level of electron leakage from hematite into the electrolyte. After the integration of OECs, the state-of-the-art α-Fe2O3/ZnO/CoTCPP/OECs photoanode exhibits a distinguished photocurrent density and excellent stability in comparison with pristine α-Fe2O3. The simultaneous incorporation of a ZnO and CoTCPP dual interlayer can effectively modulate the interfacial photoinduced charge transfer for PEC reaction. This work provides in-depth insights into interfacial charge transfer across junction electrodes and identifies the critical roles of solar PEC conversion.
RESUMO
Metal oxide semiconductor/chalcogenide quantum dot (QD) heterostructured photoanodes show photocurrent densities >30 mA/cm2 with ZnO, approaching the theoretical limits in photovoltaic (PV) cells. However, comparative performance has not been achieved with TiO2. Here, we applied a TiO2(B) surface passivation layer (SPL) on TiO2/QD (PbS and CdS) and achieved a photocurrent density of 34.59 mA/cm2 under AM 1.5G illumination for PV cells, the highest recorded to date. The SPL improves electron conductivity by increasing the density of surface states, facilitating multiple trapping/detrapping transport, and increasing the coordination number of TiO2 nanoparticles. This, along with impeded electron recombination, led to enhanced collection efficiency, which is a major factor for performance. Furthermore, SPL-treated TiO2/QD photoanodes were successfully exploited in photoelectrochemical water splitting cells, showing an excellent photocurrent density of 14.43 mA/cm2 at 0.82 V versus the Reversible Hydrogen Electrode (RHE). These results suggest a new promising strategy for the development of high-performance photoelectrochemical devices.
RESUMO
Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.