The Influence of Microstructure on TCR for Inkjet-Printed Resistive Temperature Detectors Fabricated Using AgNO3/Ethylene-Glycol-Based Inks.

This study investigated the influence of microstructure on the performance of Ag inkjet-printed, resistive temperature detectors (RTDs) fabricated using particle-free inks based on a silver nitrate (AgNO3) precursor and ethylene glycol as the ink solvent. Specifically, the temperature coefficient of resistance (TCR) and sensitivity for sensors printed using inks that use monoethylene glycol (mono-EG), diethylene glycol (di-EG), and triethylene glycol (tri-EG) and subjected to a low-pressure argon (Ar) plasma after printing were investigated. Scanning electron microscopy (SEM) confirmed previous findings that microstructure is strongly influenced by the ink solvent, with mono-EG inks producing dense structures, while di- and tri-EG inks produce porous structures, with tri-EG inks yielding the most porous structures. RTD testing revealed that sensors printed using mono-EG ink exhibited the highest TCR (1.7 × 10-3/°C), followed by di-EG ink (8.2 × 10-4/°C) and tri-EG ink (7.2 × 10-4/°C). These findings indicate that porosity exhibits a strong negative influence on TCR. Sensitivity was not strongly influenced by microstructure but rather by the resistance of RTD. The highest sensitivity (0.84 Ω/°C) was observed for an RTD printed using mono-EG ink but not under plasma exposure conditions that yield the highest TCR.

On-Chip Modification of Titanium Electrothermal Characteristics by Joule Heating: Application to Terahertz Microbolometer.

This study demonstrates the conversion of metallic titanium (Ti) to titanium oxide just by conducting electrical current through Ti thin film in vacuum and increasing the temperature by Joule heating. This led to the improvement of electrical and thermal properties of a microbolometer. A microbolometer with an integrated Ti thermistor and heater width of 2.7 µm and a length of 50 µm was fabricated for the current study. Constant-voltage stresses were applied to the thermistor wire to observe the effect of the Joule heating on its properties. Thermistor resistance ~14 times the initial resistance was observed owing to the heating. A negative large temperature coefficient of resistance (TCR) of -0.32%/K was also observed owing to the treatment, leading to an improved responsivity of ~4.5 times from devices with untreated Ti thermistors. However, this does not improve the noise equivalent power (NEP), due to the increased flicker noise. Microstructural analyses with transmission electron microscopy (TEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) confirm the formation of a titanium oxide (TiOx) semiconducting phase on the Ti phase (~85% purity) deposited initially, further to the heating. Formation of TiOx during annealing could minimize the narrow width effect, which we reported previously in thin metal wires, leading to enhancement of responsivity.

The Effect of Sensor Dimensions on the Performance of Flexible Hot Film Shear Stress Sensors.

This paper presents a study to determine the effect of sensor dimensions (length, width, and thickness) on the performance of flexible hot film shear stress sensors. The sensing component of a hot film sensor is nickel thermistor, and the flexible substrate material is polyimide. Several groups of flexible hot film shear stress sensors with different lengths, widths, and thicknesses were studied. The temperature coefficient of resistance (TCR) was measured. The TCR increased slightly with increasing thickness. The frequency response (time constant) of the flexible hot film shear stress sensor was obtained by the square wave, while the sensitivity was tested in a wind tunnel. The study found that as the sensor length was shortened, the frequency response increased, and the sensitivity decreased.

Experiments on Temperature Changes of Microbolometer under Blackbody Radiation and Predictions Using Thermal Modeling by COMSOL Multiphysics Simulator.

In this study, we study a heat transfer model, with the surface of the microbolometer device receiving radiation from blackbody constructed using a COMSOL Multiphysics simulator. We have proposed three kinds of L-type 2-leg and 4-leg with the pixel pitch of 35 µm based on vanadium oxide absorbent membrane sandwiched with top passivated and bottom Si3N4 supporting films, respectively. Under the blackbody radiation, the surface temperature changes and distributions of these samples are simulated and analyzed in detail. The trend of change of the temperature dependent resistance of the four kinds of bolometer devices using the proposed heat transfer model is consistent with the actual results of the change of resistance of 4 samples irradiated with 325 K blackbody located in the front distance of 5 cm. In this paper, ΔT indicates the averaged differences of the top temperature on the suspended membrane and the lowest temperature on the post of legs of the microbolometers. It is shown that ΔT ≈ 17 mK is larger in nominal 2-leg microbolometer device than that of 4-leg one and of 2-leg with 2 µm × 2 µm central square hole and two 7.5 µm × 2 µm slits in suspended films. Additionally, only ΔT ≈ 5 mK with 4-leg microbolometer device under the same radiated energy of 325 K blackbody results from the larger total thermal conductance.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.