The Impact of Green Physical Crosslinking Methods on the Development of Sericin-Based Biohydrogels for Wound Healing.

Silk sericin (SS)-based hydrogels show promise for wound healing due to their biocompatibility, moisture regulation, and cell proliferation properties. However, there is still a need to develop green crosslinking methods to obtain non-toxic, absorbent, and mechanically strong SS hydrogels. This study investigated the effects of three green crosslinking methods, annealing treatment (T), exposure to an absolute ethanol vapor atmosphere (V.E), and water vapor (V.A), on the physicochemical and mechanical properties of SS and poly (vinyl alcohol) (PVA) biohydrogels. X-ray diffraction and Fourier-transform infrared spectroscopy were used to determine chemical structures. Thermal properties and morphological changes were studied through thermogravimetric analysis and scanning electron microscopy, respectively. The water absorption capacity, mass loss, sericin release in phosphate-buffered saline (PBS), and compressive strength were also evaluated. The results showed that physical crosslinking methods induced different structural transitions in the biohydrogels, impacting their mechanical properties. In particular, V.A hydrogen presented the highest compressive strength at 80% deformation owing to its compact and porous structure with crystallization and bonding sites. Moreover, both the V.A and T hydrogels exhibited improved absorption capacity, stability, and slow SS release in PBS. These results demonstrate the potential of green physical crosslinking techniques for producing SS/PVA biomaterials for wound healing applications.

Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.

Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) metal-oxide semiconductors (MOS) for thin-film transistor (TFT) applications. One of the issues for solution-based MOS fabrication is how to sufficiently oxidize the precursor in order to achieve high performance. As the oxidation rate of solution processing is lower than vacuum-based deposition such as sputtering, devices using solution-processed MOS exhibit relatively poorer performance. Therefore, we propose a method to prepare the metal-oxide precursor upon exposure to saturated water vapor in a closed volume for increasing the oxidization efficiency without requiring additional oxidizing agent. We found that the hydroxide rate of the MOS film exposed to water vapor is lower than when unexposed (≤18%). Hence, we successfully fabricated oxide TFTs with high electron mobility (27.9 cm(2)/V·s) and established a rapid process (annealing at 400 °C for 5 min) that is much shorter than the conventional as-deposited long-duration annealing (at 400 °C for 1 h) whose corresponding mobility is even lower (19.2 cm(2)/V·s).