Electrical characterization of metal-molecule-silicon junctions.
Ann N Y Acad Sci
; 1006: 36-47, 2003 Dec.
Article
em En
| MEDLINE
| ID: mdl-14976008
ABSTRACT
Direct assembly of molecules onto silicon surfaces is of particular interest for potential employment in hybrid organic-semiconductor devices. In the study we report here, aryl diazonium salts were used to assemble covalently bound molecular groups on a hydride-passivated, oxide-free n-type Si(111) surface. The reaction of 4-(trimethylsilylethynyl)benzenediazonium tetrafluoroborate generates a molecular layer of 4-(trimethylsilylethynyl)phenylene (TMS-EP) on the n++-Si(111) surface. The monolayer modifies the electrical properties of the interface and exhibits nonlinear current-voltage characteristics, as compared with the ohmic behavior observed from metal-n++-Si(111) junctions. The result of current-voltage measurements at variable temperatures (from 300 to 10 K) on samples made with the TMS-EP molecule does not show significant thermally-activated transport, indicating that tunneling is the dominant transport mechanism. The measured data is compared to a tunneling model.
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Base de dados:
MEDLINE
Assunto principal:
Silício
/
Compostos de Trimetilsilil
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Nanotecnologia
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Eletrônica
/
Metais
Idioma:
En
Ano de publicação:
2003
Tipo de documento:
Article