Interface magnetization reversal and anisotropy in Fe/AlGaAs(001).
Phys Rev Lett
; 95(13): 137202, 2005 Sep 23.
Article
em En
| MEDLINE
| ID: mdl-16197169
ABSTRACT
The reversal process of the Fe interface layer magnetization in Fe/AlGaAs heterostructures is measured directly using magnetization-induced second-harmonic generation, and is compared with the reversal of the bulk magnetization as obtained from magneto-optic Kerr effect. The switching characteristics are distinctly different due to interface-derived anisotropy--single step switching occurs at the interface layer, while two-jump switching occurs in the bulk Fe for the magnetic field orientations employed. The angle between the interface and bulk magnetization may be as large as 40-85 degrees. Such interface switching will dominate the behavior of nanoscale structures.
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Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2005
Tipo de documento:
Article