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Generating spin currents in semiconductors with the spin Hall effect.
Sih, V; Lau, W H; Myers, R C; Horowitz, V R; Gossard, A C; Awschalom, D D.
Afiliação
  • Sih V; Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA.
Phys Rev Lett ; 97(9): 096605, 2006 Sep 01.
Article em En | MEDLINE | ID: mdl-17026386
ABSTRACT
We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.
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Base de dados: MEDLINE Idioma: En Ano de publicação: 2006 Tipo de documento: Article
Buscar no Google
Base de dados: MEDLINE Idioma: En Ano de publicação: 2006 Tipo de documento: Article