Grafting of phosphonate groups on the silica surface for the elaboration of ion-sensitive field-effect transistors.

ABSTRACT

Ion-sensitive field-effect transistors (ISFETs) sensitive to Ca(2+) ions could be elaborated by means of a new grafting process of the phosphonate group at the surface of the silica gate of FETs. A grafting process involving only one chemical reaction step at the surface afforded a significant improvement of the ISFET properties. The sensitivity of the ISFET towards Ca(2+) ions at pH 10 was quasi-linear in the concentration range from 10(-1) to 10(-3) M, and the slope was 10 mV pCa(-1). The site-binding model works well in predicting the experimental data, giving the complexation constant of 10(2.7) and a low value of the grafting density. The origin of the poor response of ISFETs sensitized by means of a multistep grafting process was investigated on silica powders of high specific area the cleavage of the organic grafts at the SiOSi bonds occurring at each step could be disclosed by means of elemental analyses, infrared, and cross-polarization and magic angle spinning nuclear magnetic resonance of the grafts.