Your browser doesn't support javascript.
loading
Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups.
Gracia-Espino, Eduardo; Sala, Giovanni; Pino, Flavio; Halonen, Niina; Luomahaara, Juho; Mäklin, Jani; Tóth, Géza; Kordás, Krisztián; Jantunen, Heli; Terrones, Mauricio; Helistö, Panu; Seppä, Heikki; Ajayan, Pulickel M; Vajtai, Robert.
Afiliação
  • Gracia-Espino E; Advanced Materials Department, Instituto Potosino de Investigacion Cientifica y Tecnologica, camino a la presa San Jose 2055, Col. Lomas 4. Seccion, 78216 San Luis Potosi, Mexico.
ACS Nano ; 4(6): 3318-24, 2010 Jun 22.
Article em En | MEDLINE | ID: mdl-20481513
ABSTRACT
The electrical properties of random networks of single-wall carbon nanotubes (SWNTs) obtained by inkjet printing are studied. Water-based stable inks of functionalized SWNTs (carboxylic acid, amide, poly(ethylene glycol), and polyaminobenzene sulfonic acid) were prepared and applied to inkjet deposit microscopic patterns of nanotube films on lithographically defined silicon chips with a back-side gate arrangement. Source-drain transfer characteristics and gate-effect measurements confirm the important role of the chemical functional groups in the electrical behavior of carbon nanotube networks. Considerable nonlinear transport in conjunction with a high channel current on/off ratio of approximately 70 was observed with poly(ethylene glycol)-functionalized nanotubes. The positive temperature coefficient of channel resistance shows the nonmetallic behavior of the inkjet-printed films. Other inkjet-printed field-effect transistors using carboxyl-functionalized nanotubes as source, drain, and gate electrodes, poly(ethylene glycol)-functionalized nanotubes as the channel, and poly(ethylene glycol) as the gate dielectric were also tested and characterized.
Assuntos

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / Cristalização / Nanotecnologia / Nanoestruturas Idioma: En Ano de publicação: 2010 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / Cristalização / Nanotecnologia / Nanoestruturas Idioma: En Ano de publicação: 2010 Tipo de documento: Article