On the Chemical Origin of the Gap Bowing in (GaAs)(1-x)Ge(2x) Alloys: A Combined DFT-QSGW Study.
Nanoscale Res Lett
; 5(3): 469-477, 2010 Jan 07.
Article
em En
| MEDLINE
| ID: mdl-20671794
ABSTRACT
Motivated by the research and analysis of new materials for photovoltaics and by the possibility of tailoring their optical properties for improved solar energy conversion, we have focused our attention on the (GaAs)(1-x)Ge(2x) series of alloys. We have investigated the structural properties of some (GaAs)(1-x)Ge(2x) compounds within the local-density approximation to density-functional theory, and their optical properties within the Quasiparticle Self-consistent GW approximation. The QSGW results confirm the experimental evidence of asymmetric bandgap bowing. It is explained in terms of violations of the octet rule, as well as in terms of the order-disorder phase transition.
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2010
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Article