Sub-20 nm laser ablation for lithographic dry development.
Nanotechnology
; 23(18): 185301, 2012 May 11.
Article
em En
| MEDLINE
| ID: mdl-22498667
ABSTRACT
Pattern collapse of small or high aspect ratio lines during traditional wet development is a major challenge for miniaturization in nanolithography. Here we report on a new dry process which combines high resolution resist exposure with selective laser ablation to achieve high resolution with high aspect ratios. Using a low power 532 nm laser, we dry develop a normally negative tone methyl acetoxy calix(6)arene in positive tone to reveal sub-20 nm half-pitch features in a â¼100 nm film at aspect ratios unattainable with conventional development with ablation time of 1-2 s per laser pixel (â¼600 nm diameter spot). We also demonstrate superior negative tone wet development by combining electron beam exposure with subsequent laser exposure at a non-ablative threshold that requires far less electron beam exposure doses than traditional wet development.
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MEDLINE
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En
Ano de publicação:
2012
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Article