Room-temperature near-infrared photodetectors based on single heterojunction nanowires.
Nano Lett
; 14(2): 694-8, 2014 Feb 12.
Article
em En
| MEDLINE
| ID: mdl-24382206
ABSTRACT
Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 µm), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.
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MEDLINE
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En
Ano de publicação:
2014
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Article