Study of vertical Si/SiO2 interface using laser-assisted atom probe tomography and transmission electron microscopy.

Lee, J H; Lee, B H; Kim, Y T; Kim, J J; Lee, S Y; Lee, K P; Park, C G.

Afiliação

Lee JH; Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea; Semiconductor Business, Samsung Electronics, Hwasung 445-701, Republic of Korea. Electronic address: kooljaylee@gmail.com.
Lee BH; National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea.
Kim YT; Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea.
Kim JJ; Semiconductor Business, Samsung Electronics, Hwasung 445-701, Republic of Korea.
Lee SY; Semiconductor Business, Samsung Electronics, Hwasung 445-701, Republic of Korea.
Lee KP; Semiconductor Business, Samsung Electronics, Hwasung 445-701, Republic of Korea.
Park CG; Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea; National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea. Electroni

Micron ; 58: 32-7, 2014 Mar.

Article em En | MEDLINE | ID: mdl-24411275