High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.
Adv Mater
; 27(12): 2107-12, 2015 Mar 25.
Article
em En
| MEDLINE
| ID: mdl-25688488
ABSTRACT
Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V(-1) s(-1) ) and the high on/off ratio (10(5) -10(6) ), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.
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MEDLINE
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En
Ano de publicação:
2015
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Article