Your browser doesn't support javascript.
loading
High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).
Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef.
Afiliação
  • Koester R; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Sager D; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Quitsch WA; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Pfingsten O; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Poloczek A; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Blumenthal S; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Keller G; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Prost W; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Bacher G; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
  • Tegude FJ; †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
Nano Lett ; 15(4): 2318-23, 2015 Apr 08.
Article em En | MEDLINE | ID: mdl-25758029
The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.
Assuntos
Palavras-chave
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Semicondutores / Silício / Iluminação / Nanofios / Gálio / Índio Idioma: En Ano de publicação: 2015 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Semicondutores / Silício / Iluminação / Nanofios / Gálio / Índio Idioma: En Ano de publicação: 2015 Tipo de documento: Article