Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation.
Nano Lett
; 15(8): 5052-8, 2015 Aug 12.
Article
em En
| MEDLINE
| ID: mdl-26121164
ABSTRACT
We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.
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MEDLINE
Assunto principal:
Transistores Eletrônicos
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Dissulfetos
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Molibdênio
Idioma:
En
Ano de publicação:
2015
Tipo de documento:
Article