Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang.

Afiliação

Shih HY; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Shiojiri M; Kyoto Institute of Technology, Kyoto, Japan.
Chen CH; Graduate Institute of Applied Science &Technology, National Taiwan University of Science &Technology, Taipei, Taiwan.
Yu SF; Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan.
Ko CT; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Yang JR; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Lin RM; Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan.
Chen MJ; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.

Sci Rep ; 5: 13671, 2015 Sep 02.

Article em En | MEDLINE | ID: mdl-26329829

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article