Extended two-temperature model for ultrafast thermal response of band gap materials upon impulsive optical excitation.
J Chem Phys
; 143(19): 194705, 2015 Nov 21.
Article
em En
| MEDLINE
| ID: mdl-26590551
ABSTRACT
Thermal modeling and numerical simulations have been performed to describe the ultrafast thermal response of band gap materials upon optical excitation. A model was established by extending the conventional two-temperature model that is adequate for metals, but not for semiconductors. It considers the time- and space-dependent density of electrons photoexcited to the conduction band and accordingly allows a more accurate description of the transient thermal equilibration between the hot electrons and lattice. Ultrafast thermal behaviors of bismuth, as a model system, were demonstrated using the extended two-temperature model with a view to elucidating the thermal effects of excitation laser pulse fluence, electron diffusivity, electron-hole recombination kinetics, and electron-phonon interactions, focusing on high-density excitation.
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MEDLINE
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En
Ano de publicação:
2015
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Article