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Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.
Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo.
Afiliação
  • Jeong SJ; Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Suwon 443-803, Korea.
  • Gu Y; School of Advanced Materials Science and Engineering, Samsung-SKKU Graphene/2D Center, Sungkyunkwan University, Suwon 440-746, Korea.
  • Heo J; Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Suwon 443-803, Korea.
  • Yang J; School of Advanced Materials Science and Engineering, Samsung-SKKU Graphene/2D Center, Sungkyunkwan University, Suwon 440-746, Korea.
  • Lee CS; Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Suwon 443-803, Korea.
  • Lee MH; Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Suwon 443-803, Korea.
  • Lee Y; Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Suwon 443-803, Korea.
  • Kim H; School of Advanced Materials Science and Engineering, Samsung-SKKU Graphene/2D Center, Sungkyunkwan University, Suwon 440-746, Korea.
  • Park S; Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Suwon 443-803, Korea.
  • Hwang S; Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Suwon 443-803, Korea.
Sci Rep ; 6: 20907, 2016 Feb 10.
Article em En | MEDLINE | ID: mdl-26861833
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article